Effects of preannealing temperature of ZnO thin films on the performance of dye-sensitized solar cells

The preferred (002) orientation zinc oxide (ZnO) nanocrystalline thin films have been deposited on FTO-coated glass substrates by sol–gel spin-coating technology and rapid thermal annealing for use in dye-sensitized solar cells (DSSC). The effects of preannealing temperature (100 and 300°C) on the microstructure, morphology and optical properties of ZnO thin films were studied. The ZnO thin films were characterized by X-ray diffraction (XRD), scanning electron microscopic (SEM) and Brunauer–Emmett–Teller (BET) analysis. The photoelectric performance of DSSC was studied by I–V curve and the incident photon-to-current conversion efficiency (IPCE), respectively. From the results, the intensities of (002) peaks of ZnO thin films increases with increasing preannealing temperature from 100°C to 300°C. The increase in pore size and surface area of ZnO films crystallized at the increased preannealing temperature contributed to the improvement on the absorption of N3 dye onto the films, the short-circuit photocurrent (J _sc) and open-circuit voltage (V _oc) of DSSC. The higher efficiency (η) of 2.5% with J _sc and V _oc of 8.2 mA/cm² and 0.64 V, respectively, was obtained by the ZnO film preannealed at 300°C.     

Effect of instrumental particle sizing resolution on the modelling of aerosol radiative parameters

A more realistic estimation of the scattering and hemispheric backscattering coefficients, σ_sp and σ_bsp, and their respective optical cross section, C_sca and C_bk, of aerosol particles is presented on the basis of the exact resolution of the width of the size bins of the particle counter instruments when size distribution measurements are used, and, with the exact optical detector instruments ability. The scattering and hemispheric backscattering cross sections, C_sca and C_bk, of the particles are averaged over the full size bins of the particle counter instrument, while these quantities are usually estimated only on the value of the mean geometric diameter of each size bin. Six instruments, the APS, ASASP-X, DMPS, FSSP-100, ELPI, and SMPS frequently used in particle size distribution measurements are reviewed, for spherical sea-salt particles at a wavelength λ=0.55 μm. The comparison using the conventional geometric mean diameter versus the use of the full size bin leads to large amount of errors for the optical cross section with non-negligible effects on their respective optical coefficients. The maximal accuracy expected for these optical quantities depend on the particle diameter as well as on the channel width of the instruments, and are also function of the angular detector probe used to measure them.     

Engineering silicon-based photonic crystal cavities for NV-center quantum information processing

Silicon slab photonic crystal micro cavities designed for of-resonant coupling to nitrogen vacancy (NV) centers were simulated and fabricated. FDTD-simulations show the partial density of states spectrally near the NV-center electric dipole transition can be tuned to reduce decoherence of an excited NV-center despite this transition being above the silicon electronic band gap. The partial density of states at the NV-center transition can be made to dip below half of the free-space partial density of states without significantly affecting the cavity mode quality factor. These promising results sustain the merits of using silicon as a base photonic crystal material for quantum information processing even when integrated emitters radiate above the electronic band gap of silicon.     

Design of an ultrasonic sensor for measuring distance and detecting obstacles

This paper introduces a novel method for designing the transducer of a highly directional ultrasonic range sensor for detecting obstacles in mobile robot applications. The transducer consists of wave generation, amplification, and radiation sections, and a countermass. The operating principle of this design is based on the parametric array method where the frequency difference between two ultrasonic waves is used to generate a highly directional low-frequency wave with a small aperture. The aim of this study was to design an optimal transducer to generate the two simultaneous longitudinal modes efficiently. We first derived an appropriate mathematical model by combining the continuum model of a bar and countermass with the compatibility condition between a piezoelectric actuator and a linear horn. Then we determined the optimal length of the aluminum horn and the piezoelectric actuator using a finite element method. The proposed sensor exhibited a half-power bandwidth of less than ±1.3° at 44.8 kHz, a much higher directivity than existing conventional ultrasonic range sensors.     

Determination of electrical types in the P-doped ZnO thin films by the control of ambient gas flow

Phosphorus (P)-doped ZnO thin films with amphoteric doping behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering with various argon/oxygen gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio without post-annealing. The P-doped ZnO films grown at a argon/oxygen ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of 1.5 × 10¹⁷ cm⁻³ and 2.5 cm²/V s, respectively. X-ray diffraction showed that the ZnO (0 0 0 2) peak shifted to lower angle due to the positioning of P³⁻ ions with a larger ionic radius in the O²⁻ sites. This indicates that a p-type mechanism was due to the substitutional P_O. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction light emitting diode showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.     

Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering

We grew heterojunction light emitting diode (LED) structures with various n-type semiconducting layers by magnetron sputtering on p-type GaN at high temperature. Because the undoped ZnO used as an active layer was grown under oxygen rich atmosphere, all LED devices showed the EL characteristics corresponding to orange-red wavelength due to high density of oxygen interstitial, which was coincident with the deep level photoluminescence emission of undoped ZnO. The use of the Ga doped layers as a top layer provided the sufficient electron carriers to active region and resulted in the intense EL emission. The LED sample with small quantity of Mg incorporated in MgZnO as an n-type top layer showed more intense emission than the LED with ZnO, in spite of the deteriorated electrical and structural properties of the MgZnO film. This might be due to the improvement of output extraction efficiency induced by rough surface.     

Effects of in situ plasma treatment on optical and electrical properties of index-matched transparent conducting oxide layer

We investigated the effects of in situ plasma-treatment on optical and electrical properties of index-matched indium tin oxide (IMITO) thin film. To render the IMITO-coated surface hydrophilic and study the optical and electrical characteristics, we performed in situ oxygen plasma post-treatment without breaking vacuum. The 94.6% transmittance in the visible wavelength range (400-700 nm) increased on average to 96.4% and the maximum transmittance reached 98% over a broad wavelength range. The surface roughness and sheet resistance improved from 0.9 nm and 200 Ω/sq to 0.0905 nm and 100 Ω/sq, respectively, by in situ plasma post-treatment. We confirmed by contact angle measurement that the hydrophobic IMITO surface was altered to hydrophilic. The improved optical and electrical characteristics of in situ plasma-treated IMITO makes it adequate for high-resolution liquid crystal on silicon displays.     

Possible isolation number of a matrix over nonnegative integers

Let ?₊ be the semiring of all nonnegative integers and A an m × n matrix over ?₊. The rank of A is the smallest k such that A can be factored as an m × k matrix times a k×n matrix. The isolation number of A is the maximum number of nonzero entries in A such that no two are in any row or any column, and no two are in a 2 × 2 submatrix of all nonzero entries. We have that the isolation number of A is a lower bound of the rank of A. For A with isolation number k, we investigate the possible values of the rank of A and the Boolean rank of the support of A. So we obtain that the isolation number and the Boolean rank of the support of a given matrix are the same if and only if the isolation number is 1 or 2 only. We also determine a special type of m×n matrices whose isolation number is m. That is, those matrices are permutationally equivalent to a matrix A whose support contains a submatrix of a sum of the identity matrix and a tournament matrix.     

New strong convergence theorem of the inertial projection and contraction method for variational inequality problems

Numerical Algorithms - In this paper, we introduce a new algorithm which combines the inertial projection and contraction method and the viscosity method for solving monotone variational inequality...     

Proximal point algorithms for solving convex minimization problem and common fixed points problem of asymptotically quasi-nonexpansive mappings in CAT(0) spaces with convergence analysis

In this paper, we introduce the modified proximal point algorithm for common fixed points of asymptotically quasi-nonexpansive mappings in CAT(0) spaces and also prove some convergence theorems of the proposed algorithm to a common fixed point of asymptotically quasi-nonexpansive mappings and a minimizer of a convex function. The main results in this paper improve and generalize the corresponding results given by some authors. Moreover, we then give numerical examples to illustrate and show efficiency of the proposed algorithm for supporting our main results.