Miscible blends of nitro‐substituted polybenzimidazole and polyetherimide

A novel blend system was prepared by blending organosoluble nitro‐substituted polybenzimidazole (NO₂‐PBI) and polyetherimide (PEI) in a cosolvent at a moderate condition. It was shown that the NO₂‐PBI/PEI blends not only possess tractable processability owing to the enhanced solubility of NO₂‐PBI but also retain the desirable features of unmodified PBI/PEI blends. Apparent miscibility in the blends was observed and attributed to hydrogen‐bonding interactions between N? H groups in NO₂‐PBI and carbonyl groups in PEI. It was revealed that the NO₂‐PBI/PEI blends phase‐separate upon heating above the glass‐transition temperatures. The observed mixing of NO₂‐PBI and PEI in a molecular level, although sustainable only in the glassy region, was shown to lend synergy effects to the physical properties of the blends. © 2001 John Wiley & Sons, Inc. J Polym Sci Part B: Polym Phys 39: 1778–1783, 2001     

Determination of Impurities in Gallium Oxide by NAA

Neutron activation analysis has been applied to determine 12 elements, viz. Na, Mn, As, Fe, Co, Zn, Se, Sc, Cr, Sb, Hf and Ta in high-purity Ga₂O₃. The first 7 elements could be determined by anion exchange separation and isopropyl ether extraction, and the last 8 elements by instrumental method. It is recommended that the first 3 elements are determine by one of the radiochemical modes and the others by the instrumental method.     

Effect of hydrogen doping in ZnO thin films by pulsed DC magnetron sputtering

This study examined the role of hydrogen impurities in highly oriented ZnO thin films. Hydrogen intentionally incorporated was found to play an important role as a donor in n-type conduction, improving the free carrier concentration. The increase in the conductivity of ZnO thin films was attributed to the two centers assigned to isolated hydrogen atoms in the anti-bonding sites as well as bond-centered interstitial hydrogen located between the Zn–O bonds and Zn vacancy passivated by one or two hydrogen atoms. Micro Raman spectroscopy showed two additional modes at approximately 501 and 573 cm⁻¹. These two peaks were attributed to damage to the crystal lattice, which could be explained by the optical-phonon branch at the zone boundary and host lattice defects, such as vacancy clusters, respectively.     

Low emissivity Ag/Si/glass thin films deposited by sputtering

Si was deposited on the glass substrate as an interlayer for the 2-D growth of Ag thin films because Si has a strong binding energy against Ag and can lead to a negative surface energy change in Ag/glass. The Si interlayer induced an extremely smooth and flat Ag surface, which effectively reduced the resistance and enhanced the reflectance in the IR region. In particular, Ag (9 nm)/Si (3 nm)/glass showed 0.074 emissivity and ∼91% reflectance in the IR region with 67% transmittance in the visible region.