Fourier-domain low-coherence interferometry for differential mode delay analysis of an optical fiber

We propose a novel mode analysis and differential mode delay measurement method for an optical fiber using Fourier-domain low-coherence interferometry. A spectral interferometer based on a Mach-Zehnder interferometer setup was used with a broadband source and an optical spectrum analyzer to detect relative temporal delays between the guided modes of a few-mode optical fiber by analyzing spectral interference signals. We have shown that experimental results of the proposed method agree well with those results obtained by using a conventional time-domain measurement method. We have demonstrated that this new mode analysis technique has high sensitivity (<60 dB) and very good resolution (<1 ps/m).     

一种基于功率谱对数变换的联合变换相关器

联合功率谱的高频成份对相关峰识别具有重要作用,实验中记录的联合功率谱随着频率的增加其强度迅速降低。为增强联合功率谱的高频成分,改善其调制程度,可对功率谱进行对数变换,从而有效保留更多的高频成份,压低零级衍射光斑,提高联合变换相关器的识别能力。     

Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application

Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm² that is much lower than that of glass substrate (about 1.2–1.6 J/cm²), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.     

Generalized eikonal treatment of the Gouy phase shift

We use a generalized refractive index that includes diffraction effects to show that the Gouy phase shift can be seen as an intensity averaged optical path difference between the generalized eikonal and the geometrical eikonal. This approach generalizes previous treatments to include the effects of phase distortion and confirms the role of transverse spatial confinement in the Gouy shift.     

Magic numbers and erratic level crossings of double-well Bose-Einstein condensates

By developing an approach by which we are able to quickly obtain spectra and eigenstates, we reveal for what is believed to be the first time the two novel phenomena of magic numbers and erratic level crossings in double-well Bose-Einstein condensates of N atoms. For N < or = 27 and values of U/J that are not too small (U is the two-body interaction strength, and J is the hopping parameter), systems with even atoms are shown to be much more stable than those with odd atoms, and hence even integers play a role in such systems as if they were the magic numbers of nuclei. For N > or = 30, erratic level crossings occur as NU > J.     

Reaction of layered sodium disilicate SKS-6 with calcium chloride solution as revealed by solid state NMR spectroscopy: exploring the calcium ion extracting mechanism of SKS-6

Solid-state 1H, 29Si NMR and 23Na MQMAS NMR spectroscopy combined with X-ray powder diffraction (XRD) technique was used to study the reaction between layered sodium disilicate SKS-6 and calcium chloride solution with different concentrations. Based on the experimental results the calcium ion extracting mechanism of SKS-6 was demonstrated to be via ion replacement, during which calcium ions replace sodium ions and combine with the non-bridging oxygen in SKS-6 for charge compensation, and simultaneously sodium ions leave the interlayer. This ion-replacement process was greatly influenced by the substitution of sodium ions by protons as well as the calcium ions concentration. Increasing calcium ions concentration favors the replacement of sodium ions by calcium ions, but prevents sodium ions from being substituted by protons.     

The high response organic ultraviolet photodetectors based on 2-TNATA as donor

Organic ultraviolet photodetectors (OUV-PDs) were fabricated utilizing 2-TNATA as an electron donor with Bphen and TPBi as electron acceptors. A high sensitivity of OUV-PDs to UV light was obtained in the range of 300–420 nm. The optimized OUV-PDs composed of Bphen as the acceptor offered a photocurrent density up to 336 µA/cm² at ?8 V with 365 nm UV light at a power of 1.2 mW/cm². The high response is attributed to the excellent electron transport ability of Bphen and the matched energy level between 2-TNATA and Bphen.     

电子垂直入射电离氦原子碰撞机理的理论研究

用3C模型和修正后的3C模型在低能、两个出射电子等能分享几何条件下,对电子垂直入射碰撞电离氦原子的三重微分散射截面进行了理论计算,并把计算结果与实验测量结果进行了比较,系统研究了(e,2e)反应中各种屏蔽效应对氦原子三重微分散射截面的影响,同时对截面中形成各峰的碰撞机理做了详细的探讨.研究结果表明:在入射能较低时,各种屏蔽效应对氦原子的三重微分散射截面幅度以及角分布均存在一定影响,并且形成各峰的碰撞机理直接影响截面的变化规律.     

具有纵向辅助耗尽衬底层的新型横向双扩散金属氧化物半导体场效应晶体管

为了优化横向双扩散金属氧化物半导体场效应晶体管(lateral double-diffused MOSFET,LDMOS)的击穿特性及器件性能,在传统LDMOS结构的基础上,提出了一种具有纵向辅助耗尽衬底层(assisted depletesubstrate layer,ADSL)的新型LDMOS.新加入的ADSL层使得漏端下方的纵向耗尽区大幅向衬底扩展,从而利用电场调制效应在ADSL层底部引入新的电场峰,使纵向电场得到优化,同时横向表面电场也因为电场调制效应而得到了优化.通过ISE仿真表明,当传统LDMOS与ADSL LDMOS的漂移区长度都是70μm时,击穿电压由462 V增大到897 V,提高了94%左右,并且优值也从0.55 MW/cm~2提升到1.24 MW/cm~2,提升了125%.因此,新结构ADSL LDMOS的器件性能较传统LDMOS有了极大的提升.进一步对ADSL层进行分区掺杂优化,在新结构的基础上,击穿电压在双分区时上升到938 V,三分区时为947 V.