取代基效应(SCS)与乙烯-α-烯烃共聚物的序列结构Ⅲ.定量分析

本文在分析乙烯-α-烯烃共聚物序列结构时,把代表共单体反接单元的亚甲基(CH₂)βγ和γδ分别归属给了二元组VV和三元组EEV。与此同时,CH₂-δδ和δδ⁺归属给了二元组EE。表征乙烯长序列的CH₂-δ⁺δ⁺分属二元组EE和三元组EEE,对应峰强度在EE和EEE之间的分配是处理序列分布的关键。在本文中运用序列结构的Bovey关系和Randall统计进行演算,求得了修正值△的数学表达式,严格解和近似解。在规则链条件下得到的近似解与G.J.Ray的结果完全相同。当共单体含量较少时,谱峰强度Iδ⁺δ⁺的分配接近相等。在二元组和三元组的水平上,乙烯-α-稀烃共聚物的¹³C NMR谱中共有十三个峰,属于CH₂的有十个,属于CH的有三个。利用这些谱峰的强度数据可以建立一套计算公式,由此提供共聚物序列结构的全部信息。因此这是一个研究乙烯-α-烯烃共聚物序列结构的普适方法。     

曙光一号自由电子激光器的理论计算

系统总结曙光一号自由电子激光器理论计算的主要结果:包括曙光一号装置主要参数的选取和理解;磁场失谐曲线的计算;常参数摇摆器和变参数摇摆器的主要结果;高阶波导模的贡献;电子束参数扰动对激光性能的影响;空间电荷效应等。计算结果表明,常参数摇摆器激光输出功率可达80MW,效率约50％;变参数摇摆器激光输出功率可达250MW左右,效率约16％。     

由偏微支配的系统的最优控制理论中的奇异摄动方法*

本文介绍了由偏微分方程支配的系统的最优控制理论中有关应用奇异摄动方法时出现的各种问题。考虑了渐近分析来自状态方程。或来自性能指标函数,也考虑了状态方程是定义在摄动域内的情形。     

Harmonically pump a femtosecond optical parametric oscillator to 1.13 GHz by a femtosecond 515 nm laser

We demonstrate a harmonically pumped femtosecond optical parametric oscillator(OPO)laser using a frequency-doubled mode-locked Yb:KGW laser at a repetition rate of 75.5 MHz as the pump laser.Based on a bismuth borate nonlinear crystal,repetition rates up to 1.13 GHz are realized,which is 15 times that of the pump laser.The signal wavelength is tunable from 700 nm to 887 nm.The maximum power of the signal is 207 m W at the central wavelength of 750 nm and the shortest pulse duration is 117 fs at 780 nm.The beam quality(M^2 factor)in the horizontal and vertical directions of the output beam are 1.077 and 1.141,respectively.     

不同材料弹体超声速侵彻钢筋混凝土靶的结构破坏对比实验

设计了超声速钻地结构弹,采用203 mm口径的火炮,开展了25 kg量级弹体在1100~1300 m/s速度范围内侵彻钢筋混凝土靶的实验研究,应用数值仿真对弹体侵彻钢筋混凝土靶的过程进行了模拟计算。基于实验和仿真结果,对超声速侵彻条件下两种金属材料弹体的结构响应、质量损失等问题进行了分析。结果表明:在超声速侵彻钢筋混凝土靶的过程中,两种金属材料的弹体结构变形破坏形式主要为头部侵蚀和侧壁磨蚀,头部侵蚀量的大小与弹体壳体材料有关,高强度G50钢材料更适合用于1200 m/s速度量级的超声速侵彻环境。对出现的“径缩”现象作了初步分析,并对今后工程应用的结构弹体设计提出了指导意见。     

光纤布拉格光栅传感器应变传递双向耦合分析

粘贴于受弯基体表面的光纤布拉格光栅传感器测量应变与基体真实应变之间存在误差,因此研究光纤布拉格光栅传感器的变形机理、分析测量应变与真实应变之间的关系是目前的研究热点.首先研究光纤布拉格光栅传感器与基体之间的相互作用机理,然后,利用有限元解、实验值和理论解进行对比验证,并分析产生误差的原因.最后,通过参数分析研究弹性模量、厚度、粘结长度等参数对光纤布拉格光栅传感器测量效果的影响.结果表明有限元解、实验值和理论解具有相同的变化趋势,有限元解与理论解的误差在2%以内,测量值与理论解的误差在7%以内.平均应变传递率随着基体弹性模量的增大、粘结长度的增长而逐渐增大,随粘结层弹性模量的减小、粘结层厚度的增大而逐渐减小.该理论对应用于受弯基体应变测量的光纤布拉格光栅传感器的设计具有一定的指导意义.     

Effect of mechanical force on domain switching in BiFeO_3 ultrathin films

Ferroelectric polarization can be switched by an external applied electric field and may also be reversed by a mechanical force via flexoelectricity from the strain gradient.In this study,we report the mechanical writing of an epitaxial BiFeO3(BFO)thin film and the combined action of an applied mechanical force and electric field on domain switching,where the mechanical force and electric field are applied using the tip of atomic force microscopy.When the applied force exceeds the threshold value,the upward polarization of the BFO thin film can be reversed by pure mechanical force via flexoelectricity;when an electric field is simultaneously applied,the mechanical force can reduce the coercive electric field because both the piezoelectricity from the homogeneous strain and the flexoelectricity from strain gradient contribute to the internal electric field in the film.The mechanically switched domains exhibit a slightly lower surface potential when compared with that exhibited by the electrically switched domains due to no charge injection in the mechanical method.Furthermore,both the mechanically and electrically switched domains exhibit a tunneling electroresistance in the BFO ferroelectric tunnel junction.     

CaPtAs: A new noncentrosymmetric superconductor

We report the discovery of a new noncentrosymmetric superconductor CaPtAs.It crystallizes in a tetragonal structure(space group I41md,No.109),featuring three dimensional honeycomb networks of Pt-As and a much elongated c-axis(a=b=4.18?,and c=43.70?).The superconductivity of CaPtAs with Tc=1.47 K was characterized by means of electrical resistivity,specific heat,and ac magnetic susceptibility.The electronic specific heat Ce(T)/T shows evidence for a deviation from the behavior of a conventional BCS superconductor,and can be reasonably fitted by a p-wave model.The upper critical fieldμ0Hc2 of CaPtAs exhibits a moderate anisotropy,with an in-plane value of around 204 mT and an out-of-plane value of 148 mT.Density functional theory calculations indicate that the Pt-5 d and As-4 p orbitals mainly contribute to the density of states near the Fermi level,showing that the Pt-As honeycomb networks may significantly influence the superconducting properties.     

1200 V碳化硅功率MOSFET低温特性的实验表征及分析

碳化硅功率MOSFET是宽禁带功率半导体器件的典型代表,具有优异的电气性能。基于低温环境下的应用需求,研究了1200 V碳化硅功率MOSFET在77.7 K至300 K温区的静/动态特性,定性分析了温度对碳化硅功率MOSFET性能的影响。实验结果显示,温度从300 K降低至77.7 K时,阈值电压上升177.24%,漏-源极击穿电压降低32.99%,栅极泄漏电流降低82.51%,导通电阻升高1142.28%,零栅压漏电流降低89.84%(300 K至125 K)。双脉冲测试显示,开通时间增大8.59%,关断时间降低16.86%,开关损耗增加48%。分析发现,碳化硅功率MOSFET较高的界面态密度和较差的沟道迁移率,是导致其在低温下性能劣化的主要原因。