Effect of cooling rate on microstructure of friction-stir welded AA1100 aluminum alloy

In this work, the microstructural changes occurring during cooling of friction-stir welded aluminum alloy AA1100 were evaluated. To this end, friction-stir welding (FSW) was performed in a wide range of cooling rates of 20–62 K/s and the evolved microstructures were studied by using electron backscatter diffraction. Below 0.6 T_m (T_m being the melting point), the stir zone material was found to experience no significant changes during cooling. At higher FSW temperatures, however, notable changes occurred in the welded material, including grain growth, sharpening of texture, reduction of the fraction of high-angle boundaries and material softening.     

处理污泥焦颗粒内部孔结构在燃烧过程中变化

在管式炉反应器中进行了1种污泥定温燃烧试验,进行了5个不同燃烬率样品的液氮静态容量法等温物理吸附试验.发现不同燃烬率的污泥样品孔分布特性相似,其孔系统可能主要是由一端封闭的不透气的孔构成;随着燃烬率的增加,比表面积、平均孔径和孔体积等参数变化不同;样品颗粒内孔表面分形维数随燃烬率的增长呈先降低再升高的趋势.     

奇相干光源的测量设备无关量子密钥分配研究

刻画了奇相干光源的光子数分布特征,研究了奇相干光源下诱骗态测量设备无关量子密钥分配系统的密钥生成率与安全传输距离的关系,推导了奇相干光源下的计数率下界和误码率上界.仿真结果表明,奇相干光源光子数分布中多光子脉冲的比例低于弱相干光,可以有效提高诱骗态测量设备无关密钥分配系统的最大安全通信距离,为实用的量子密钥分配实验提供了重要的理论参数.     

Suppression of thermoelastic damping in MEMS beam resonators by piezoresistivity

Microelectronic mechanical (MEM) beam resonators with high quality factors are always preferred in practical applications. As one of the damping sources, thermoelastic damping (TED) caused by irreversible heat flows is usually considered as an upper limit of the overall damping effect. A new method is proposed in this work to compensate TED by taking advantage of the piezoresistive effect. Such a method is implemented by applying an electrostatic field along the beam length with a negative piezoresistive coefficient. During a resonance, the stretched part of the beam generates a higher electrical power density and thus a higher temperature, while the compressed region leads to a lower temperature. Such a temperature distribution is opposite to the temperature change caused by the thermoelastic effect. The working principle is described by a set of coupled differential equations, which are subsequently solved by the finite element method. The result indicates that the TED in the beam resonators can be completely compensated when the strength of electrical field is tuned to a critical value, namely CEF. The value of the CEF is further analyzed by a series of parametric studies on various material properties and geometric factors.     

超强激光与等离子体相互作用产生中子的计算

对超强激光与等离子体相互作用过程中发生的氘-氘反应的中子能谱进行了计算.并将计算结 果与实验结果相比较.采用麦克斯韦能量分布和高斯形式的角分布对实验结果进行拟合，从 而确定了入射氘离子的温度和角分布，为研究离子的加速机制提供了依据. 关键词： 中子能谱 激光与等离子体相互作用     

自发产生相干对Y型四能级原子系统探测吸收的影响

在与三个场相互作用的Y型四能级原子系统中,利用密度矩阵方程计算了介质对探测场的吸收,分析了自发产生相干对探测吸收的影响.结果发现:随着自发产生相干的影响,在共振中心处,探测吸收表现出不同的现象.当自发产生相干对探测吸收产生相消干涉时,随着自发产生相干的增强,在共振中心处削弱吸收,出现增益.当自发产生相干对探测吸收产生相长干涉时,随着自发产生相干的增强,在共振中心处出现吸收增强,也即出现电磁诱导吸收(electromagnetically induced absorption,简称EIA),在共振两侧的双电磁感应透明强度(electromagnetically induced transparency,简称EIT)增强,窗口变宽.同时,在能级| 3〉→| 2〉与| 4〉→| 2〉的自发衰减速率比值不变下,当能级|3〉→|2〉与|4〉→|2〉的自发衰减速率减小时,在共振中心处,吸收线宽变窄,共振两侧的透明窗口变宽.     

Measurements of NO2 mixing ratios with topographic target light scattering-differential optical absorption spectroscopy system and comparisons to point monitoring technique

A topographic target light scattering-differential optical absorption spectroscopy(ToTaL-DOAS) system is developed for measuring average concentrations along a known optical path and studying surface-near distributions of atmospheric trace gases.The telescope of the ToTaL-DOAS system points to targets which are located at known distances from the measurement device and illuminated by sunlight.Average concentrations with high spatial resolution can be retrieved by receiving sunlight reflected from the targets.A filed measurement of NO2 concentration is performed with the ToTaL-DOAS system in Shijiazhuang in the autumn of 2011.The measurement data are compared with concentrations measured by the point monitoring technique at the same site.The results show that the ToTaL-DOAS system is sensitive to the variation of NO2 concentrations along the optical path.     

Study on spatial resolution of micromegas as a neutron detector under condition of high neutron flux and γ ray background

In this paper Micromegas has been designed to detect neutrons. The simulation of the spatial reso-lution of Micromegas as neutron detector is carried out by GEANT4 toolkit. The neutron track reconstruction method based on the time coincidence technology is employed in the present work. The influence of the flux of incident 14 MeV neutron and high gamma background on the spatial resolution is carefully studied. Our results show that the spatial resolution of the detector is sensitive to the neutron flux, but insensitive to the intensity of γ background if the neutron track reconstruction method proposed by our group is used. The γ insensitivity makes it possible for us to use the Micromegas detector under condition which has high γ-rays background.     

A prototype of a high rating MRPC

Six-gap resistive plate chamber (MRPC) prototypes with semiconductive glass electrodes (bulk resistivity～1010.cm) were studied for suitability in time-of-flight (TOF) applications at high rates. These studies were performed using a continuous electron beam of 800 MeV at IHEP and an X-ray machine. Time resolutions of about 100 ps and efficiencies larger than 90% were obtained for flux densities up to 28 kHz/cm2.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.