ZnMgO/ZnO异质结构中二维电子气的研究

论文根据ZnMgO/ZnO异质结构二维电子气的能带结构及相关理论模型, 采用一维Poisson-Schrodinger方程的自洽求解, 模拟计算了ZnMgO/ZnO异质结构中二维电子气的分布及其对ZnMgO势垒层厚度及Mg组分的依赖关系. 研究发现该异质结构中ZnMgO势垒层厚度存在一最小临界值: 当垒层厚度小于该临界值时, 二维电子气消失, 当垒层厚度大于该临界值时, 其二维电子气密度随着该垒层厚度的增加而增大; 同时研究发现ZnMgO势垒层中Mg组分的增加将显著增强其二维电子气的行为, 导致二维电子气密度的明显增大; 论文对模拟计算获得的结果与相关文献报道的实验结果进行了比较, 并从极化效应和能带结构的角度进行了分析和讨论, 给出了合理的解释. 关键词： 氧化锌 二维电子气 异质结构 理论计算     

甘氨酸色氨酸寡肽链的红外光谱的密度泛函研究

运用密度泛函理论, 在6-31 G(d) 基组水平上对甘氨酸色氨酸交替组成的六种寡肽链结构进行几何优化, 并进行了结合能和振动光谱地分析. 结果表明, 寡肽的生长利于结构的稳定性. 随着肽链的生长, 单一基团的振动存在蓝移或奇偶震荡现象; 同类官能团的耦合振动存在红移现象; 而肽链端部基团的振动频率基本不变. 这些丰富的频移现象和尺寸效应、耦合效应、诱导效应、奇偶效应等因素共同竞争有关. 该结果对应用红外光谱对寡肽链的残基数及长度地测量等工作有指导意义. 关键词： 寡肽链 红外光谱 耦合效应 尺寸效应     

Quantum phases,supersolids and quantum phase transitions of interacting bosons in frustrated lattices

By using the dual vortex method (DVM), we develop systematically a simple and effective scheme to use the vortex degree of freedoms on dual lattices to characterize the symmetry breaking patterns of the boson insulating states in the direct lattices. Then we apply our scheme to study quantum phases and phase transitions in an extended boson Hubbard model slightly away from 1/3 (2/3) filling on frustrated lattices such as triangular and Kagome lattice. In a triangular lattice at 1/3, we find a X-CDW, a stripe CDW phase which was found previously by a density operator formalism (DOF). Most importantly, we also find a new CDW-VB phase which has both local CDW and local VB orders, in sharp contrast to a bubble CDW phase found previously by the DOF. In the Kagome lattice at 1/3, we find a VBS phase and a 6-fold CDW phase. Most importantly, we also identify a CDW-VB phase which has both local CDW and local VB orders which was found in previous QMC simulations. We also study several other phases which are not found by the DVM. By analyzing carefully the saddle point structures of the dual gauge fields in the translational symmetry breaking sides and pushing the effective actions slightly away from the commensurate filling f=1/3$f=1/3$(2/3)$(2/3)$, we classified all the possible types of supersolids and analyze their stability conditions. In a triangular lattice, there are X-CDW supersolid, stripe CDW supersolid, but absence of any valence bond supersolid (VB-SS). There are also a new kind of supersolid: CDW-VB supersolid. In a Kagome lattice, there are 6-fold CDW supersolid, stripe CDW supersolid, but absence of any valence bond supersolid (VB-SS). There are also a new kind of supersolid: CDW-VB supersolid. We show that independent of the types of the SS, the quantum phase transitions from solids to supersolids driven by a chemical potential are in the same universality class as that from a Mott insulator to a superfluid, therefore have exact exponents z=2$z=2$, ν=1/2$\nu =1/2$, η=0$\eta =0$ (with logarithmic corrections). Excitation spectra of all these insulating phases and supersolid phases are also studied. Implications on QMC simulations with both nearest neighbor and next nearest neighbor interactions in both lattices are given. Some possible intrinsic problems of the DOF in identifying the insulating phases are also pointed out.     

Performance and Mechanism of Epoxy Resin for Reinforcement of Styrene–Butadiene Rubber

Styrene–butadiene rubber (SBR) vulcanizates reinforced by epoxy resin (EP) have been synthesized by an in-situ vulcanization and curing process. The influences of synthetic parameters, such as the contents of EP, carbon black, and types of compatilizers, on the microstructures, vulcanization, and mechanical properties of SBR have been investigated. It was found that EP in SBR exists in the form of a fibrillar interpenetrating network, which is important for the enhancement of mechanical properties of SBR. The experimental results showed that when the percentage of EP was in the range of 10–20%, the composite materials had the best comprehensive performance. In comparison with pure SBR, the tear strength and the tensile stress at 300% elongation of SBR-EP composite were increased significantly. The method can be applicable for other rubber vulcanizates to improve their mechanical properties.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

Entropic uncertainty relation in neutrino oscillations

The European Physical Journal C - We study the isentropic evolution of the matter produced in relativistic heavy-ion collisions for various values of the entropy-per-baryon ratio of interest for...     

Optimal spectral phase control of femtosecond laser-induced up-conversion luminescence in Sm3+:NaYF4 glass

The spectral phase of the femtosecond laser field is an important parameter that affects the up-conversion(UC)luminescence efficiency of dopant lanthanide ions.In this work,we report an experi-mental study on controlling the UC lmiiinescence efficiency in Sm^3+:NaYF4 glass by 800-nm femtosec-ond laser pulse shaping using spectral phase modulation.The optimal phase control strategy efficiently enhances or suppresses the UC luminescence intensity.Based on the laser-power dependence of the UC luminescence intensity and its comparison with the luminescence spectrum under direct 266-nm fem-tosecond lciser irradiation,we propose herein an excitation model combining non-resonant two-photon absorption with resonance-media ted three-photon absorption to explain the experimental observations.     

埋层界面和空气表面和频光谱信号贡献的调控

本文研究表明通过膜厚控制和表面等离激元增强方法可有效区分隐藏界面和空气表面的和频振动光谱信号. 以氟化钙基底支撑的PMMA薄膜为模型,观察到隐藏界面和空气表面对和频信号贡献的变化. 通过监控羰基和甲基伸缩振动基团,发现薄PMMA膜的和频信号来自PMMA/空气表面的化学基团-CH₂、-CH₃、-OCH₃和C=O,而厚PMMA膜的和频信号则来自基底/PMMA埋层界面的-OCH₃和C=O基团. 随制膜浓度增大,埋层界面C=O基团的取向角从65°下降到43°,且浓度大于或等于0.5 wt%时,取向角等于45°±2°. 相比之下,空气表面C=O的取向角落在21°∽38°之间. 在金纳米棒存在条件下,表面等离激元可以极大地增强和频信号,尤其是来自埋层界面信号.     

氦在铝表面辐照和积聚的团簇动力学模拟

我们利用团簇动力学模型(IRadMat)研究了keV-He离子辐照金属铝的缺陷动力学和氦的聚集行为.通过对不同俘获类型(团簇、晶界和位错)俘获He浓度的定量分析,我们发现大多数He原子被晶界吸收,这成为铝在低辐照通量下发生脆化的主要原因.随着辐照能量的增加,He滞留峰的位置会变得更深.然而,随着辐照通量的增加,He在体内的滞留量会变得更多,但滞留深度的峰值位置不变.我们的结果表明,晶界的影响在He的滞留分布以及铝的脆化行为中起着关键作用,这也有助于我们理解He在金属中的动力学行为和损伤的分布.