Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

Spectral line suppression and sideband narrowing via quantum interference

We reveal that for a realistic system, interference effects are obtained such as the suppression of central line and inner sidebands and the narrowing of the outer fluorescence sidebands. For this purpose, we consider a spontaneous decay from an excited state to a metastable state when the excited and metastable states are resonantly coupled to an auxiliary metastable state by a laser field and a microwave field, respectively. The fluorescence spectrum evolves from a five-peaked structure into a doublet of ultrasharp lines as the ratio of the laser field Rabi frequency to the microwave Rabi frequency is decreased. The physical origin is presented in terms of dressed states.     

a-C:F薄膜的热稳定性与光学带隙的关联

以CF4和C6H6的混合气体作为气源,在微波电子回旋共振化学气相沉积(ECRCVD)装置中制备了氟化非晶碳薄膜(aC:F),并在N2气氛中作了退火处理以考察其热稳定性.通过傅里叶变换红外吸收谱和紫外可见光谱获得了薄膜中CC双键的相对含量和光学带隙,发现膜中CC键含量与光学带隙之间存在着密切的关联,在高微波功率下沉积的氟化非晶碳膜具有低的光学带隙和较好的热稳定性. 关键词： 氟化非晶碳膜 光学带隙 退火温度 热稳定性     

ON THE UNIQUENESS OF THE WEAK SOLUTIONS OF A QUASILINEAR HYPERBOLIC SYSTEM WITH A SINGULAR SOURCE TERM

This paper is a continuation of the authors'previous paper[1].In this paper the authorsprove,assuming additional conditions on the initial data,some results about the existence anduniqueness of the entropy weak solutions of the Cauchy problem for the singular hyperbolicsystem a_t+(au)_x_2au/x=0,u_t+1/2(a~2+u~2)_x=0,x>0,t≥0.     

我国上市公司资本结构决策的实证研究

本在已有资本结构理论研究成果的基础上，对30家沪市上市公司的资本结构进行了实证研究，提出了在我国资本市场环境下优化企业资本结构的对策建议。     

Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

As+注入硅的紫外-可见椭圆偏振光谱

本文采用椭圆偏振光谱法研究了剂量为1×10¹⁶—3×10¹²cm^-2的As⁺注入硅,及其在700℃退火后的光学性质。得出:当As⁺注入剂量增大到某一程度后,便呈非晶特性。低于临界剂量的样品,其n-λ,ε₂-λ关系曲线随剂量的增大而往下方移动,呈有规律变化;退火后,在大于4000?波段,n-λ与ε₂-λ曲线基本恢复到单晶硅状态。但在小于4000?的紫外区却未完全恢复,注入剂量越大,偏离单晶硅就越大。并指出,紫外光区是离子注入硅的信息敏感区;用有效质量模型计算出注入剂量与损伤度的关系。计算结果与实验符合得较好。 关键词：     

一维光学格子孤子的传输特性及控制研究

利用解析和数值方法研究了在具有横向折射率周期性调制的克尔型非线性介质中光学格子孤子的传输，得到了孤子参数的演化方程以及格子孤子的形成和稳定传输的条件.结果表明：当光束的入射角小于某临界角度时，光束可被类似波导形式的路径俘获而稳定传输，该临界角随折射率调制周期、调制深度的增加而增大，且光束越窄临界值越大.此外，线性空间啁啾虽然对光束传输的中心位置没有任何影响，但会导致光束发散从而破坏格子孤子的形成和稳定传输，对此提出了采用特定功率取值来补偿啁啾作用从而形成格子孤子的方案. 关键词： 光孤子 光学格子 光传输 矩方法     

掺钕聚甲基丙烯酸甲酯的光学特性

研究了制备的掺钕螯合物Nd(DBM)3Phen材料的吸收光谱、激发光谱、荧光光谱,应用Judd-Ofelt理论计算了该材料的强度参量．分析了钕离子激发态4F3／2的辐射寿命(631 μs)和4F3／2→4IJ′跃迁的受激发射截面和荧光分支比．