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31.
32.
In this paper, continuous wave Yb3+-doped double-clad fiber lasers (DCFLs) with linear-cavity are investigated theoretically and numerically using the rate equations. Under the steady state conditions, the simplified analytic solutions of Yb3+-doped DCFLs under considering the scattering loss are deduced in the strongly pump condition. Compared with the known analytic solutions in published literatures, our analytic solutions are more accurate, especially, at higher reflectivity of output mirror. In addition, a fast and stable algorithm based on the Newton-Raphson method is proposed to simulate numerically Yb3+-doped DCFLs. The results by simplified analytic solutions are in good agreement with those by the numerical simulation. Moreover, we have performed the optimization of an Yb3+-doped DCFL using the simplified analytic solutions and the numerical simulations, respectively.  相似文献   
33.
In this paper, we study the dynamical behavior for a 4-dimensional reversible system near its heteroclinic loop connecting a saddle-focus and a saddle. The existence of infinitely many reversible 1-homoclinic orbits to the saddle and 2-homoclinic orbits to the saddle-focus is shown. And it is also proved that, corresponding to each 1-homoclinic (resp. 2-homoclinic) orbit F, there is a spiral segment such that the associated orbits starting from the segment are all reversible 1-periodic (resp. 2-periodic) and accumulate onto F. Moreover, each 2-homoclinic orbit may be also accumulated by a sequence of reversible 4-homoclinic orbits.  相似文献   
34.
由大学多媒体教学实践所引发的深入思考   总被引:5,自引:0,他引:5  
多媒体技术是物理教学良好的辅助工具,多媒体技术的应用为大学物理教学开辟了一片广阔天地。它能大大增加物理教学的信息量,图形形象直观、生动活泼,有着传统教学无法比拟的优势,但是,多媒体技术使用不当也会给物理教学带来一些负面影响。  相似文献   
35.
High longitudinal selectivity of the shifting multiplexing with spherical reference wave is proposed and demonstrated. A simplified method based on wave optics is used for calculating the selectivity, and the result fits well the experimental measurement. Under the paraxial condition, a simple formula for the longitudinal selectivity is introduced. With use of an object lens with effective NA=0.817, we obtain that an FWHM of selectivity is as small as 1 μm.  相似文献   
36.
采用Monte Carlo模拟方法研究了多嵌段聚合物在A/B/嵌段聚合物三组份体系作为相容剂使用的有效性.占总体积19%的A组份在体系中为分散相.模拟结果显示了两嵌段和多嵌段聚合物在界面上的聚集行为,以及如何影响这个不相容体系的相形为.两嵌段聚合物趋于直立在相界面上,而多嵌段聚合物更容易横跨在相界面上并占据较大的界面积.从而导致多嵌段聚合物更有效的阻止体系相分离的发生.  相似文献   
37.
Let A and B be two finite subsets of a field . In this paper, we provide a non-trivial lower bound for {a+b:aA, bB, and P(a,b)≠0} where P(x,y) [x,y].  相似文献   
38.
采用水雾化方法制备Fe7Al4Sn2P10C2B4Si4合金粉末,研究发现该合金具有强的非晶形成能力和高热稳定性,在粉末粒度小于400目时可以形成非晶态合金.采用该非晶粉末制备的磁粉芯在高频下品质因数显著高于MPP粉芯,说明该磁粉芯高频损耗较低.分析表明,非晶合金磁粉芯高频下损耗低的主要原因是电阻率较高.  相似文献   
39.
40.
CrNx thin films have attracted much attention for semiconductor IC packaging molding dies and forming tools due to their excellent hardness, thermal stability and non-sticking properties (low surface free energy). However, few data has been published on the surface free energy (SFE) of CrNx films at temperatures in the range 20-170 °C. In this study CrNx thin films with CrN, Cr(N), Cr2N (and mixture of these phases) were prepared using closed field unbalanced magnetron sputtering at a wide range of Cr+2 emission intensity. The contact angles of water, di-iodomethane and ethylene glycol on the coated surfaces were measured at temperatures in the range 20-170 °C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the CrNx films and their components (e.g., dispersion, polar) were calculated using the Owens-Wendt geometric mean approach. The influences of CrNx film surface roughness and microstructure on the surface free energy were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The experimental results showed that the lowest total SFE was obtained corresponding to CrN at temperature in 20 °C. This is lower than that of Cr(N), Cr2N (and mixture of these phases). The total SFE, dispersive SFE and polar SFE of CrNx films decreased with increasing surface temperature. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness.  相似文献   
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