大学物理实验中用坐标纸作图的规范性

大学物理实验中,作图法是数据处理中比较重要的一种方法,用坐标纸作图是数据处理训练的必要途径,但目前不少学生手工作图并不规范。总结出作图法的6条基本规则,并通过实验数据作图的实例,分析学生较为常见的手工作图不规范表现,并提出相应的教学建议。     

递变能量成像中最佳X射线管电压预测算法

X射线递变能量成像是依次获取复杂结构件在递变能量下的局部有效信息,并通过多谱融合获取完整结构信息。但是目前的能量选择主要以人工设定管电压步进为主,无法匹配检测对象的有效厚度变化率,成像效率及射线利用率较低。基于递变能量成像规律,提出一种最佳X射线管电压预测算法。该方法通过对检测物体进行变能量预扫描,提取图像序列中有效厚度(高质量区域)和临近厚度(预测区域),建立有效厚度的图像灰度与管电压、X射线光谱之间的物理模型,及临近厚度灰度差与电压的函数模型,进而得到临近厚度最佳成像时的能量预测模型。通过模型求解,实现了能量的自适应预测。以不同厚度钢块为对象,利用该算法逐一预测各个厚度钢块最佳成像时的管电压,并与实际值对比。实验结果显示,在低能时可跨3~4 mm准确预测,高能时可跨7~10 mm预测,精度可以达到95%以上。     

Compact TEM<Subscript>00</Subscript> grazing-incidence Nd:GdVO<Subscript>4</Subscript> laser using a folded cavity

A compact diode-side-pumped Nd:GdVO₄ laser system using a folded cavity and grazing-incidence configuration is presented. The highest multimode output power obtained was 21.8 W at 36 W of effective diode pump power. Highest optical-to-optical conversion efficiency of 61.5% was achieved at 33 W of effective diode pump power with 20.3 W of multimode output power. For single-mode TEM₀₀ operation, an intracavity telescope was adopted for mode matching in the horizontal direction. Because of the folded cavity and the intracavity telescope, this laser head was the most compact to our knowledge of the TEM₀₀ grazing-incidence laser geometry. At last, an output power of 15 W was produced at 36 W of effective diode pump power. The stable Q-switching operation was also obtained. PACS 42.55.-f; 42.55.Xi; 42.60.Gd     

Enhanced photovoltaic properties of polymer-fullerene bulk heterojunction solar cells by thermal annealing

The effect of a thermal annealing treatment on the performance of bulk heterojunction photovoltaic cells based on poly[2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene] (MEH-PPV) and fullerene (C₆₀) composites is investigated. Upon thermal annealing at 120 ^°C, short-circuit current and power conversion efficiency (η) are more than tripled, while a sharp rise by eight times in and η is found for the device annealed at 200 ^°C. It is concluded that the improved phase separation between MEH-PPV and C₆₀ leads to the enhancement of and η at 120 ^°C, while thermodynamic molecule arrangement at the higher temperature of ∼200 ^°C induces a significant increase in all photovoltaic parameters of composite devices except the open-circuit voltage .     

采用Al/TaN叠层电极提高Si基Ge PIN光电探测器的性能

金属与Ge材料接触由于存在强烈的费米钉扎效应, 导致金属电极与n型Ge接触引入较大的接触电阻, 限制了Si基Ge探测器响应带宽. 本文报道了在SOI衬底上外延Ge单晶薄膜并制备了不同台面尺度的Ge PIN光电探测器. 对比了电极分别为金属Al和Al/TaN叠层的具有相同器件结构的SOI基Ge PIN光电探测器的暗电流、响应度以及响应带宽等参数. 发现在Al与Ge之间增加一薄层TaN可有效减小n型Ge的接触电阻, 将台面直径为24 μ的探测器在1.55 μ的波 长和-1 V偏压下的3 dB响应带宽提高了4倍. 同时, 器件暗电流减小一个数量级, 而响应度提高了2倍. 结果表明, 采用TaN薄层制作金属与Ge接触电极, 可有效钝化金属与Ge界面, 减轻费米钉扎效应, 降低金属与n-Ge接触的势垒高度, 因而减小接触电阻和界面复合电流, 提高探测器的光电性能.     

High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,     

Controlling and synchronization of a hyperchaotic system based on passive control

In this paper, a new hyperchaotic system is proposed, and the basic properties of this system are analyzed by means of equilibrium point, Poincaré map, bifurcation diagram, and Lyapunov exponents. Based on the passivity theory, the controllers are designed to achieve the new hyperchaotic system globally, asymptotically stabilized at the equilibrium point, and also realize the synchronization between the two hyperchaotic systems under different initial values respectively. Finally, the numerical simulation results show that the proposed control and synchronization schemes are effective.     

Exponential networked synchronization of master-slave chaotic systems with time-varying communication topologies

The networked synchronization problem of a class of master-slave chaotic systems with time-varying communication topologies is investigated in this paper. Based on algebraic graph theory and matrix theory, a simple linear state feedback controller is designed to synchronize the master chaotic system and the slave chaotic systems with a time- varying communication topology connection. The exponential stability of the closed-loop networked synchronization error system is guaranteed by applying Lyapunov stability theory. The derived novel criteria are in the form of linear matrix inequalities (LMIs), which are easy to examine and tremendously reduce the computation burden from the feedback matrices. This paper provides an alternative networked secure communication scheme which can be extended conveniently. An illustrative example is given to demonstrate the effectiveness of the proposed networked synchronization method.     

Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm.     

A density functional theory study on parameters fitting of ultra long armchair （n, n） single walled boron nitride nanotubes

Armchair(n,n) single walled boron nitride nanotubes with n = 2-17 are studied by the density functional theory at the B3LYP/3-21G(d) level combined with the periodic boundary conditions for simulating the ultra long model.The results show that the structure parameters and the formation energies bear a strong relationship to n.The fitted analytical equations are developed with correlation coefficients larger than 0.999.The energy gaps of(2,2) and(3,3) tubes are indirect gaps,and the larger tubes(n = 4-17) have direct energy gaps.Results show that the armchair boron nitride nanotubes(n = 2-17) are insulators with wide energy gaps of between 5.93 eV and 6.23 eV.