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51.
It is shown how, with the help of approximate integral manifolds, to solve the reduction problem in stability theory in the nonsingular critical case. A generalization of the first fundamental Lyapunov-Malkin theorem in critical cases is obtained.Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 43, No. 10, pp. 1324–1329, October, 1991.  相似文献   
52.
In this paper we find conditions on boundary value problems for elliptic differential-operator equations of the 4-th order in an interval to be fredholm. Apparently, this is the first publication for elliptic differential-operator equations of the 4-th order, when the principal part of the equation has the form u′?n(t) + Au″(t) + Bu(t), where AB-1/2 is a bounded operator and is not compact. As an application we find some algebraic conditions on boundary value problems for elliptic partial equations of the 4-th order in cylindrical domains to be fredholm. Note that a new method has actually been suggested here for investigation of boundary value problems for elliptic partial equations of the 4-th order.  相似文献   
53.
54.
A new technique for the construction of numerical methods based on continued fractions is proposed. A characteristic feature of these algorithms is the fact that for certain values of the parameters it is possible to obtain both novel and traditional (explicit and implicit) numerical methods for the solution of the Cauchy problem for ordinary differential equations. Two-sided formulas are proposed by means of which it is possible to obtain on each integration step not only upper and lower approximations to the exact solution, but also information concerning the magnitude of the leading term of the error without the need for additional calculations of the right-hand side of the initial differential equation.Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 44, No. 12, pp. 1695–1701, December, 1992.  相似文献   
55.
The radiative capture of ultracold neutrons traversing thin and thick homogeneous layers of matter is analyzed. The applicability range of the formulas for the probabilities of reflection, transmission, and capture in thick layers (under certain conditions, they admit a simple interpretation—it is often quoted in the literature—that is based on the effective capture cross section, which is in inverse proportion to the velocity of a neutron in matter) is investigated, along with the conditions under which there arises the effective capture cross section.  相似文献   
56.
We propose a general method for obtaining Tauberian theorems with remainder for one class of Voronoi summation methods for double sequences of elements of a locally convex, linear topological space. This method is a generalization of the Davydov method of C-points.  相似文献   
57.
Universidade de Beira Interior, Portugal: and S. P. Timoshenko Institute of Mechanics, National Academy of Sciences of the Ukraine, Kiev. Translated from Prikladnaya Mekhanika, Vol. 31. No. 11, pp. 3–10, November, 1995.  相似文献   
58.
Translated from Matematicheskie Zametki, Vol. 57, No. 1, pp. 150–153, January, 1995.  相似文献   
59.
The influence of a large signal on the characteristics of a small signal near the frequency of the former is experimentally studied for the case of their simultaneous propagation through a resonant transmission line based on backward volume magnetostatic waves. The effects observed are caused by the excitation of spin waves in a ferromagnetic film at different large-signal frequencies and by the back influence of excited spin-wave packets on the amplitude and phase characteristics of the small signal.  相似文献   
60.
Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450°C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined.  相似文献   
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