High photosensitivity in cis-polyphenylacetylene films irradiated with 60Co γ-ray

This paper reports that ⁶⁰Co γ-ray irradiation can convert cis-polyphenylacetylene (cis-PPA) films prepared with rare-earth coordination catalysts to highly photosensitive materials. The dependence of the photosensitivity on irradiation dose, preparation methods, and microstructure of the PPA films has been investigated by means of a potential discharge technique. The photosensitivity was enhanced with increasing irradiation dose. The critical dose to produce a light response was 5 × 10³ Gy. The maximum surface potential discharge rate was 618 V/s, and the dark decay was approximately 2 V/s for cis-PPA films irradiated with ⁶⁰Co γ-ray (dose: 2 × 10⁵ Gy). The cis-transoidal-PPA and an electrophotographic photoreceptor device incorporating cis-PPA showed a higher irradiation effect. The structure and properties of ⁶⁰Co γ-ray irradiated rare-earth PPA films are similar to the unirradiated films.     

X射线衍射研究N2+注入Si

本文首先给出了180keV的N₂⁺注入Si的X射线衍射(XRD)分布,然后用Levenberg-Marquardt最优化方法模拟实验曲线。根据XRD运动学理论,在我们给出的试探胁变函数和多层模型的基础上,用自编程序计算给出了晶格胁变随注入深度、剂量和退火温度的变化。最后我们对实验和计算结果进行了初步的分析讨论。 关键词：     

The Iyengar Type Inequalities with Exact Estimations and the Chebyshev Central Algorithms of Integrals

In this paper, both low order and high order extensions of the Iyengar type inequality are obtained. Such extensions are the best possible in the same sense as that of the Iyengar inequality. hzrthermore, the Chebyshev central algorithms of integrals for some function classes and some related problems are also considered and investigated.     

中立型脉冲微分方程正解的存在性

本文利用Banach压缩映射原理，讨论了中立型时滞脉冲微分方程正解的存在性。     

串联双环光微谐振器的滤波特性

详细研究了串联双环光微谐振器的光带通滤波特性，给出了其通带带宽的公式，分析了出／入环光耦合系数和环间光耦合系数对通带特性的影响，计算并特别强调了滤波通带的结构特点，也分析了微环中存在的光损耗对串联双环光微谐振器的滤波特性的影响。     

两个安全第一思想模型的比较分析

针对投资者可能的投资需求确立了基于安全第一思想下两个相近的投资目标:1、极大化投资末期总收益率超过给定水平α的概率;2、极小化投资末期总收益率与给定水平α的距离.并分别就这两个目标建立了优化决策模型,得到了模型解析解,最后对两个模型结果进行了比较分析和经济解释.     

Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1 − xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of Cd_xZn_{1 − x}Se/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced.     

164Lu的三轴超形变核态的理论计算

用三维TRS(totalrouthiansurface)自洽理论对奇奇核164Lu的位能面进行了计算,计算结果与实验上得到的ε2=0.38基本一致,从而从理论上确认了164Lu是三轴超形变核,并且指出了存在三轴超形变带的两个组态. Total routhian surface in~(164)Lu nuclei is calculated according to the three dimensional Total Routhian Surface (TRS) theory. The result of the calculation is in agreement with the experiment. At the same time, two TSD bands could be assigned to the configuration(π\(1/2), α=1/2)(ν\(5/2), α=1/2), (π\(1/2), α=1/2)(ν\(3/2), α=-1/2).     

一维粗糙表面散射特征的数值分析

使用Monte Carlo模拟的方法得出了随机粗糙表面，在Kirchhoff近似的基础上，利用数值分析的方法分析了一维随机粗糙表面的散射特征，得出了一维随机粗糙表面散射分布曲线，我们还考虑了遮蔽效应的影响，并且讨论了Kirchhoff近似的有效性。     

基于VolSurf参数的化合物水溶性QSPR分析

利用分子的VolSurf参数预测化合物的水溶解度并阐明有利于水溶解度的主要分子结构特征.被测化合物包括185个共两大系列分子,使用偏最小二乘判别分析和多元线性回归方法在实验数据和分子特征之间建立相关性,均得到较好的结果.以70个化合物所建立的训练集模型对其余115个化合物有较好的预测能力.参数分析表明分子内较大的亲水区域对水溶解度有利;分子质心与疏水区、亲水区之间的不平衡性越高,水溶解度越大;分子量及体积大的分子对其水溶解度不利.