Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

猜想M(2k,k+1)=3k-1+[(k-1)/2]的反例

Brualdi与Jung在[1]中研究了一类具有固定线和k的n×n矩阵上的最大跳跃数M(n,k),并提出猜想M(2k, k + 1) = 3k - 1 + [(k-1)/2].本文给出了这一猜想的两个反例．     

Σ-原子能级的理论计算与分析

通过对Σ-原子的理论分析,数值求解了相应的Dirac方程,得到 了一组Σ-原子的能级值,与实验数据相当吻合;其结果连同K-原子的情况支持了Batty 光学模型势在奇异原子中应用的正确性,进而表明核子间的强相互作用力为吸引力.     

微光像增强器图像传递信噪比的测试研究

图像传递信噪比是微光像增强器的重要特性参数．能够全面定量地表征像增强器在探测弱辐射图像时的综合性能，对于确定像增强器的图像探测灵敏闽具有重要意义。针对其测试原理．采用高灵敏度低噪声CCD器件作为像管输出图像的探测接收器．并引入数字图像处理技术。利用设计的测试系统实现了典型目标图像传递信噪比的自动测试．多次实验结果表明．陔测试系统具有测试过程自动快速及测试数据准确稳定的优点．相同测试条件下的不确定度优于±3%。     

The structure of invertible substitutions on a three-letter alphabet

We study the structure of invertible substitutions on three-letter alphabet. We show that there exists a finite set of invertible substitutions such that any invertible substitution can be written as I_wσ₁σ₂σ_k, where I_w is the inner automorphism associated with w, and for 1jk. As a consequence, M is the matrix of an invertible substitution if and only if it is a finite product of non-negative elementary matrices.     

前缘弯掠斜流转子叶顶间隙流动特性数值分析

本文对前缘弯掠斜流转子叶顶间隙内的流动特性进行了数值分析。结果表明:叶顶间隙气流与主流发生卷吸而生成泄漏涡。泄漏涡作用的区域具有较低的压力分布。在叶片通道内,泄漏涡沿着与转子旋向相反的方向朝相邻叶片的压力面移动。大间隙时的泄漏涡比小间隙时强烈。低流量时泄漏涡的作用区域比高流量时大。在各种流量特性下,叶顶尾缘近吸力面区域都存在着二次间隙流。     

Control of LHCD on the HL-2A Tokamak

in order to study non-indutive plasma current production, the lower hybrid current drive（LHCD） experiment on the HL-2A tokamak is carried out. Simultaneously a microcomputer has been used to control the whole LHCD system. During the experiment this year, we can monitor and protect the LHCD system by use of the microcomputer control system, which will imediately switch off the microwave power to be launched into the tokamak if the plasma is disrupted. All this ensure that the microwave is injected into the equipment correctly.     

基于遗传算法和指标满意度求解的第三方物流企业物流中心选址方法

本利用AHP和模糊综合评价法评价物流中心选址的定性指标、用量化选址模型结合遗传算法计算定量指标，再藉助指标满意度求解把定性和定量的指标进行综合，从而为决策对物流中心选址做出科学的决策提供支持。     

成分和厚度的依赖

通过调整Mn的成分，系统地研究了Ni81Fe19/Ni100-xMnx双层膜的磁学性质，特别是交换偏置场(Hex)的变化.当Ni100-xMnx中Mn的原子百分比在534%到600%之间时，对于150nm的Ni81Fe19，得到了最大的交换偏置场175kA/m，同时由于Mn对Ni81Fe19层的扩散所造成的磁矩的降低小于20%；高角x射线衍射证明Ni100-xMnx的晶格常数随着Mn成分的改变而变化，Mn含量越多，其晶格常数越大；制备态Ni100-xMnx膜晶格常数与θ相NiMn膜晶格常数的接近程度与NiMn膜θ相形成的容易程度相对应.也研究了交换偏置场随着Ni１００-xMnx厚度的变化，第一次得到了当Ni100-xMnx中Mn的原子百分比为706%时，Ni81Fe19(150nm)/Ni100-xMnx(90nm)双层膜在经过240℃，5h退火后，可以有80kA/m的交换偏置场，此时铁磁层磁矩的大小几乎不变. 关键词： Ni81Fe19/Ni100-xMnx 交换偏置场     

用于强磁场的快响应真空规的研制进展

研制了能在强磁场、强干扰环境下工作的快响应真空电离规(快规),用于对HL 2A装置偏滤器室和等离子体附近的中性粒子密度和通量进行原位测量。介绍了快规的结构、工作原理、设计要点以及实验结果。在无磁场的情况下,快规对气体压强的测量范围为6.4×10-6～0.15Pa,在1×10-5～0.15Pa范围内,快规收集极离子流与发射电子流之比与气压保持良好线性关系;在0 15T的磁场下,快规的规管常数未发生显著变化,在规管对称轴与磁力线的夹角小于15o时,规管常数的变化小于10%。