The beam-based calibration of an X-ray pinhole camera at SSRF

A pinhole camera for imaging X-ray synchrotron radiation from a dipole magnet is now in operation at the Shanghai Synchrotron Radiation Facility (SSRF) storage ring. The electron beam size is derived by unfolding the radiation image and the point spread function (PSF) with deconvolution techniques. The performance of the pinhole is determined by the accuracy of the PSF measurement. This article will focus on a beam-based calibration scheme to measure the PSF system by varying the beam images with different quadrupole settings and fitting them with the corresponding theoretical beam sizes. Applying this method at SSRF, the PSF value of the pinhole is revised from 37 to 44 μm. The deviation in beam size between the theoretical value and the measured value is minimized to 4% after calibration. This optimization allows us to observe the horizontal disturbance due to injection down to as small as 0.5 μm.     

Computer design of a compact cyclotron

Here we present results of the computer design of the structural elements of a compact cyclotron by the example of HITFiL cyclotron selected as the driving accelerator that is under construction at the Institute of Modern Physics (Lanzhou, China). In the article a complex approach to modeling of the compact cyclotron, including calculation of electromagnetic fields of the structural elements and beam dynamics calculations, is described. The existing design data on the axial injection, magnetic, acceleration and extraction systems of the cyclotron are used as a starting point in the simulation. Some of the upgrades of the cyclotron structural elements were proposed, which led to substantial improvement of the beam quality and transmission.     

圆形射流湍流场的大涡模拟研究

使用发展的大涡模拟并行程序,数值模拟了圆形射流湍流场,与实验值进行详细比较,对大涡模拟程序进行检验,并分析网格尺度对计算结果的影响。结果表明,大涡模拟计算的平均速度场和雷诺应力场与实验值符合得非常好,验证了该大涡模拟计算程序的可靠性和精确度。同时发现一阶统计矩受网格尺度影响不大,二阶及高阶矩与网格尺度有较大的关系,因此使用大涡模拟方法计算湍流及湍流燃烧问题应对网格依赖性进行必要分析,至少保证二阶统计矩具有较好的精度。     

快反系统中平面反射镜的轻量化设计

根据快速控制反射镜系统(快反系统)对平面反射镜的设计要求,对快反镜的轻量化结构进行了优化设计。选择比刚度大、热变形系数小的碳化硅为镜坯材料,采用背部开槽式结构减重,背部3点式支撑,对不同筋宽和镜面厚度等多种轻量化方案进行了有限元分析。结果表明:筋宽越大,镜体刚度越好,但筋宽增大到一定程度时,反射镜刚度的改善程度减缓;镜面越厚,镜体内应力、自重变形越大。结合反射镜设计要求和有限元分析结果,加工制备了筋宽为4 mm,镜面厚度为4 mm的碳化硅反射镜,镜体轻量化率达55%。实测反射镜的面形精度,其RMS值不超过λ/30,与分析结果相符,满足系统的使用要求。     

板条增益介质波前畸变诊断方法

对波前重构算法中的区域法进行了改进,使其能够应用于板条增益介质的波前畸变诊断。利用该方法对47块Nd: YAG板条增益介质沿厚度方向波前畸变进行测量,指出镀膜和加工等环节对增益介质的波前畸变可能造成的影响。按照波前畸变峰谷（PV）值对测量结果进行了统计,结果表明:增益介质造成的静态波前畸变参差不齐,测量样本中静态畸变PV值最多可达5 m以上,且仅有4.1%的增益介质静态畸变PV值小于1 m。通过选取某些增益介质使之级联,测量其组合波前畸变,发现在系统中使用两块波面互补的增益介质有助于减小系统的静态波前畸变。     

磁化铁氧体覆盖二维导体目标FDTD分析的移位算子方法

采用移位算子方法把时域有限差分法推广应用于二维磁各向异性色散介质—磁化铁氧体中.证明了电磁波横向入射二维轴向磁化铁氧体目标情形下,电磁波可按目标的轴向分解为横电波(TE波)和横磁波(TM波),且TE波的散射特性与铁氧体介质无关,而TM波的散射特性与介质电磁参量密切相关,同时对其物理原因进行了分析.通过采用移位算子方法处理磁化铁氧体频域本构关系,得到该情形下目标电磁散射的移位算子时域有限差的迭代计算公式,同时解决了电磁波在各向异性和频率色散介质中传播的问题.计算了轴向磁化铁氧体涂敷VonKarman型导体柱的TM波双站雷达散射截面,分析了铁氧体参量对目标双站雷达散射截面的影响.结果表明:恰当地选择铁氧体参量能有效地减少目标的雷达散射截面,本文时谐因子取exp〔jωt〕.     

Determination of the ~(12)C(p, γ)~(13)N reaction rates fromthe ~(12)C(~7Li,~6He)~(13)N reaction

The angular distribution of the 12C(7Li,6He)13N reaction at E(7Li) = 44.0 MeV was measured at the HI-13 tandem accelerator of Beijing, China. The asymptotic normalization coefficient (ANC) of 13N → 12C + p was derived to be (1.64 ± 0.11) fm-1/2 through the distorted wave Born approximation (DWBA) analysis. The ANC was then used to deduce the astrophysical S (E) factors and reaction rates for the 12C(p,γ)13N direct capture reaction at energies of astrophysical relevance.     

二维随机体系中长寿命模的研究

用时域有限差分法求解Maxwell方程,数值研究了TM模在二维随机散射体系中传输,通过傅里叶变换得到不同几何参量和光学参量的散射体系内长寿命模的频谱。计算得出宽带脉冲源激励随机散射体系后,存在于随机体系中的长寿命模频谱以分立频率窗口的形式存在。建立了用以解释长寿命模以分立频率窗口存在的物理模型,该模型与数值研究结果吻合较好,论证了存在于随机散射体系中长寿命模的形成机制与传统光学谐振腔内冷腔模形成机制的相似性。     

PBL在大学物理综合设计性实验教学中的运用

PBL教学法能实现大学物理综合设计性实验开设的初衷。在实践中要重点把握好创设问题情境、分组讨论、合作实验、汇报交流和总结评价五个环节,注意问题的创设要注重情境性和艺术性、分组要具互补性、教师的引导帮助要有针对性和开放性实验室的支持四个方面。     

量子阱层和垒层具有不同Al组分的270/290/330nm AlGaN基深紫外LED光电性能

为了研究AlGaN量子阱层和垒层中Al组分不同对AlGaN基深紫外发光二极管(LED)光电性能的影响,本文利用MOCVD生长、光刻和干法刻蚀工艺制备了AlGaN量子阱层和垒层具有不同Al组分的270/290/330nm深紫外LED,通过实验和数值模拟计算方法发现,量子阱层和垒层中具有低Al组分紫外LED的AlGaN材料具有较低的位错密度、较高的光输出功率和外量子效率。通过电流-电压(I-V)曲线拟合出的较大的理想因子(3.5)和能带结构图表明,AlGaN深紫外LED的电流产生是隧穿机制占据主导作用,这是因为高Al组分AlGaN量子阱中强极化场造成了有源层区域较大的能带弯曲和电势降。