MOCVD生长的未掺杂GaN的结晶特性与补偿度关系的研究

对本实验室用ＭＯＣＶＤ方法生长的未故意掺杂的ＧａＮ单晶膜进行了结晶性能、电学性能研究。结果表明,室温时ＧａＮ的Ｘ射线双晶衍射半高宽与其补偿度有较强的依赖关系。高补偿的ＧａＮ的Ｘ射线双晶衍射半高宽较宽。低补偿的ＧａＮ的Ｘ射线双晶衍射半高宽较窄。     

黑腔端置靶辐照不均匀性分析

提供一种解析方法来研究激光加热黑腔所产生的平面辐射场的不均匀度与平面靶大小和位置的关系,解析结果与数值模拟结果进行了比较,两者的曲线形状基本一致,辐照不均匀度最小值的位置也是一致的。并用此方法给出了能产生有最小辐照不均匀度的平面辐射场的腔靶尺寸的范围。     

荷能离子在C60薄膜中引起的辐照效应

用 Raman散射和 XPS技术分析了能量为几百 ke V到几百 Me V的多种离子在 C60 薄膜中引起的辐照效应.分析结果表明 ,在低能重离子辐照的 C60 薄膜中 ,其晶态向非晶态的转变过程是由核碰撞主导的.在快离子 (1 2 0 ke V的 H离子和171.2 Me V的 S离子 )辐照的情况下,电子能损起主导作用.发现在H离子辐照过程中,电子能损有明显的退火效应 ,致使 C60 由晶态向非晶态转变的过程中,经历了一个石墨化的中间过程;而在 S离子辐照的情况下 ,电子能损的破坏作用超过了退火效应 ,因此 ,在C₆₀ 由晶态向非晶态转变的过程中,无石墨化的中间过程.Irradiation effecs (mainly including transformation from crystalline into amorphous state) of C 60 films induced by 120 keV H, He, N, Ar, Fe and Mo ions, 240 keV and 360 keV Ar ions, and 171.2 MeV, 125.3 MeV and 75.8 MeV S ions were analysed by means of Raman scattering and XPS technique. The analysis results indicate that amorphization process in the cases of N, Ar, Fe and Mo ions irradiation is dominated by nuclear collision, but in the case of H ion irradiation, the process is...     

合肥光源直流流强检测器系统的磁屏蔽

分析和测试了合肥光源杂散场对直流流强检测器系统的影响。给出了合肥光源ＤＣＣＴ系统的磁屏蔽的计算、设计和测量结果。屏蔽后,由杂散场引起的ＤＣＣＴ零漂由１ｍＡ降至１０μＡ以下。     

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In order to improve the anti-thermal load and heat dissipation performance of the divertor of EAST, its first wall material is changed to tungsten from graphite. In the structure, outer target adopts the ITER-like monoblock, bracing and cooling structure adopts incorporate cassette. After establishing the cooling structure of EAST tungsten divertor, the flows-solid coupling heat conduction model of water-pipes is used to analyze the heat dissipation situation of outside target in the form of turbulent flow. While the cooling system comes to failure, a series of heat flux value 3MW·m^-2, 5MW·m^-2, 8MW·m^-2, 10MW·m^-2 are applied in the hazardous area to analyze transient conditions and real temperature distribution. The results shows that if the water flows at 4m·s^-1, the cooling pipes can withstand the heat flux with peak power in 10MW·m^-2. It can well meet the needs in heat dissipation of EAST experiment.     

烷烃/正庚烷和醇/正庚烷二元燃料低温着火特性的模拟研究

二元燃料燃烧技术作为一种应用替代能源的技术已经被广泛应用,为了深入地理解天然气、液化石油气和醇类等被引燃燃料对柴油低温着火的推迟影响,本文对二元燃料低温着火过程进行了模拟研究。结果表明,在初始温度小于1000 K时,被引燃燃料推迟正庚烷着火的能力由高到低的顺序为:乙烷丙烷正丁烷正戊烷正己烷,从正戊烷开始,被引燃燃料对正庚烷着火的抑制作用开始消失。甲醇和乙醇几乎没有低温反应活性,它们将活泼的OH转化为了稳定的H_2O_2;醛类和烯醇的生成反应是醇类燃料推迟正庚烷着火能力强于对应烷烃燃料的原因。     

非接触式测量电控喷油器针阀响应特性的研究

为了精确测量电控喷油器针阀的运动规律,以汽油机低压电磁阀喷油器为研究对象,采用了霍尔传感器测量电控喷油器针阀响应时的电磁阀电流信号,并引入高速摄像对整个喷雾过程进行同步观察的方法。通过对比分析针阀运动时的喷油器电路中电流信号变化规律和高速摄像系统观察到的实时喷雾图像之间的对应关系,表明针阀的运动响应和霍尔元件传感器的输出电压存在确定的关系,并对针阀运动引起的磁路变化、电流变化进行了理论分析验证。在无需对喷油器进行任何改造的前提下,设计了一套电控喷油器针阀开启及落座滞后时间的测量系统,实现了对电磁喷油器喷油时针阀运动的实时、精准测量。     

高效钙钛矿-有机本体异质结杂化串联太阳能电池

制备了一种有机铅卤钙钛矿-有机本体异质结杂化串联太阳能电池。采用紫外可见吸收光谱、原子力显微镜对薄膜形貌进行了表征。结果表明:有机本体异质结层可以有效改善钙钛矿的表面形貌, 增强了可见光的吸收。优化后的串联结构电池的短路电流可达19.14mA/cm², 开路电压为0.76V, 光电转换效率达到了6.54%。钙钛矿电池和有机本体异质结电池串联结构可以同时提高短路电流及填充因子, 二者具有较好的相容性和协同作用。     

CuSO4·5H2O在用KBr压片法制样时所发生的固相反应的研究

用Ｘ射线衍射法和ＦＴ－ＩＲ法研究了ＣｕＳＯ４·５Ｈ２Ｏ在用ＫＢｒ压片法制样过程中所发生的固相反应．主要产物为：Ｋ２Ｃｕ（ＳＯ４）２·６Ｈ２Ｏ和ＣｕＢｒ２。     

PINNING EFFECT OF LEAD LANTHANUM TITANATE THIN FILMS DEPOSITED ON DIFFERENT SUBSTRATES

Pinning effect of lead lanthanum titanate (PLT) ferroelectric thin films with excess PbO of 20 mol% has been studied for deposition on diffe rent substrates. Silicon, sapphire and quartz were used as substrates on which P t/Ti or LaNiO₃ thin films were deposited as bottom electrodes. Electron probe analysis results showed that there was still a certain amount of excess Pb in PLT films after annealing at 550 ℃ for 1 h, and the amount of it was dependent on the substrate used. The distribution of excess Pb in the films was investig ated by Auger electron spectroscopy depth profile. It was shown that the substrates and the bottom electrodes had significant effects on the content and distrib ution of excess Pb in PLT films. The excess Pb and its accumulation at the inter face between the film and bottom electrode may act as pinning centers and have a pinning effect on domains, which can be observed by abnormal P-E hysteresis loops and abnormal C-V curves. The excess Pb content in the films and the accumulation of Pb at the interface were high in PLT films deposited on Pt/Ti/S i, and considerable pinning effect was observed. As LaNiO₃ would absorb most part of the excess Pb in PLT films, the content of excess Pb in the films deposited on LaNiO₃/Si was very low and the pinning effect was hardly observed.