双核铜(Ⅱ)-β-丙氨酸缩水杨醛席夫碱配合物与血清蛋白相互作用的共振瑞利散射光谱

合成了双核铜-β-丙氨酸缩水杨醛席夫碱配合物([Cu2(HL)2](NO3)2·2H2O,简称CuL).在与血清白蛋白相互作用的过程中,发现它们结合会引起蛋白共振瑞利散射(RRs)的急剧增强.最大RRS峰位于470/470nm.对体系的适宜反应条件、影响因素及散射强度与蛋白质浓度的关系进行了研究.结果表明,在一定浓度范围内,蛋白质浓度与散射强度成正比.该方法有较高的灵敏度,对牛血清白蛋白(BSA)和人血清蛋白(HSA)的检测范围为5.0-30.5ng/mL.考察了共存物质的干扰影响,并对蛋白质合成样品和实际样品进行分析,结果满意.     

纹理高阶分形特征在海面舰船目标检测中的应用

针对复杂海面环境下的舰船目标检测，分析了高阶分形特征缝隙在纹理分类中的应用，提出了一种基于分形维与缝隙的目标检测新方法，并利用该方法对海面舰船目标进行了检测。实验结果表明利用纹理分形维与缝隙特征进行海面舰船目标检测，可以取得较单一分形维检测更高的准确率。     

三段加热系统对大尺寸MPOF预制棒一步拉伸工艺

采用自行设计的微结构聚合物光纤专用拉丝系统对大尺寸微结构聚合物光纤预制棒的一步拉伸工艺进行了研究.该微结构聚合物光纤加热系统采用三段式梯度加热,可保持炉内温度的控制准确度在±2℃以内.在保持送料速度与牵引速度恒定、协调的条件下,通过对温度场温度梯度控制优化,确定了最佳拉丝温度组合,并得到了直径规格310 μm、标准偏差为±20 μm的较高质量的微结构聚合物光纤.     

基于小波变换条纹修补和条纹自相似性干涉条纹极值提取

提出了基于小波变换的条纹修补方法和利用干涉条纹自相似性的条纹灰度极值自动判读方法基于小波变换的条纹修补方法包括滤除噪音、多尺度小波变换、模极大值检测滤除奇异区域、近似信号自动修补,在此基础上进行多项式拟合,首先实现最外层条纹灰度极值的自动提取基于干涉条纹自相似性的条纹灰度极值自动判读方法是通过逐渐平移拟合区域,准确地提取了内层条纹的灰度极值位置,从而可以处理整幅图片的干涉条纹.此方法的特点是自适应、无需人为设定参量、处理速度快实验结果表明,该方法有很好的可靠性和准确性,并且处理区域大、用时少,仅需对图片扫描一次即可提取全部条纹的灰度极值.     

等离子体辅助甲烷聚合物制备及分析

在氢气和甲烷环境下,利用辉光等离子体放电制备了聚合物。该聚合物的外观特征为白色、略发黄、柔软、丝状,易碎为粉末状。聚合物中含有–CH3,–CH2,C–O,–C=C–,–OH等官能团且不存在单质形态的碳。有机溶剂溶解分析发现,常温下该聚合物在各种有机溶剂中的溶解性极小、小于0.1mg.ml^-1,几乎不溶于甲苯中,在不同有机溶剂中的溶解度大小依次为,S丙酮>S三氯甲烷>S乙醇>S环己醇>S甲苯。低温等离子体的离化率越高、中性气体被极化时的极化半径越大、环境温度越低以及介电常数越小,聚合物的生成能力越强。     

InGaN蓝光与CdTe纳米晶基白光LED

报道了倒装焊InGaN蓝光LED与黄光CdTe纳米晶的复合结构。利用蓝光作为CdTe纳米晶的激发源,通过光的下转换机制,将部分蓝光转化为黄光,复合发射出白光。室温下正向驱动电流为10mA时,发光色品坐标为x=0.29,y=0.30。实验表明,该复合结构白光LED的一大优点在于,复合光的色品坐标几乎不随正向驱动电流大小变化,颜色稳定。     

A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm

By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region （centred at about 12 μm）. After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8 μm to 12 μm （centred at 10 μm） within wide incidence angles （about 50°）, is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.     

Blow-up and Global Smooth Solutions for Incompressible Three-Dimensional Navier--Stokes Equations

We present some explicit self-similar blow-up solutions and some other solutions of the incompressible threedimensional Navier Stokes equations. These solutions indicate that in C^∞ the solution of Navier-Stokes equations does not always tend to a solution of Euler equations.     

Improvement of High Temperature Characteristics for SiGeC p-i-n Diodes with Carbon Incorporation

Temperature-dependent characteristics of SiGeC p-i-n diodes axe analysed and discussed. Based on the ISE data, the temperature-dependent physical models applicable for SiGeC/Si diodes are presented. Due to the addition of carbon into the SiGe system, the thermal stability of SiGeC diodes are improved remarkably. Compared to SiGe diodes, the reverse leakage current of SiGeC diodes is decreased by 97.1% at 400 K and its threshold voltage shift is reduced over 65.3% with an increasing temperature from 300 K to 400 K. Furthermore, the fast and soft reverse recovery characteristics are also obtained at 400 K for SiGeC diodes. As a result, the most remarkable feature of SiGeC diodes is the better high-temperature characteristics and this can be applied to high temperature up to 400 K.     

A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition

Employing the metal-organic chemical vapour deposition （MOCVD） technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux （BDF） and the carrier gas flux of oxygen （OCGF）. The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction （XRD） and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 20 locations of ZnQ （002） face in the XRD patterns and the E2 （high） locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.