基于Eclipse图形建模框架的图形化脉冲序列设计软件的实现

采用Eclipse图形建模框架（Graphical Modeling Framework,GMF）技术构建了一个图形化磁共振脉冲序列设计软件．软件具备所见即所得的特点,用户使用拖放方式所画出的脉冲序列与教科书和参考文献上的脉冲序列几乎一样．软件支持核磁共振（Nuclear Magnetic Resonance,NMR）波谱和磁共振成像（Magnetic Resonance Imaging,MRI）的脉冲序列设计,同时提供实验参数管理模块,实现脉冲序列基础上的NMR实验设计和执行预览．得益于GMF完善的模型-视图-控制器模式和强大的代码生成能力,软件开发周期大幅度缩短、扩展能力大幅度提高．     

高功率窄脉宽半导体激光激励器设计

为了获得高功率窄脉宽半导体激光,设计了半导体激光器相应的激励单元,论述MOSFET作为高速开关的工作机理,分析基于MOSFET作为高速开关产生窄的大电流脉冲的电路模型.为了使MOSFET开关速度尽可能快,根据前述分析,提出推挽式MOSFET栅极驱动方式并设计了触发窄脉冲的发生电路.当激光二极管接入放电回路时,实验表明:激光二极管输出光的峰值功率可达67.5 W,脉宽约为20 ns.最后,简要分析了影响光脉冲宽度的因素.     

用于爆炸物探测的X射线相干散射技术研究

建立了基于X光机的相干散射实验装置, 对用于爆炸物探测的X射线相干散射技术进行了研究. 在一个固定的角度下(6.5°), 测量了多种常见爆炸物和非爆炸物的相干散射谱. 结果表明, 每种爆炸物都有特定的相干散射谱线, 包含了与物质化学组分相关的"指纹信息". 使用这一方法可以将爆炸物从常见的非爆炸物中鉴别出来.     

基于X射线断层成像的逆向工程中轮廓序列分割算法的原理及实现

为了实现基于X射线断层成像(CT)的逆向工程中具有参数识别的三维图像重构, 提出了一种分割轮廓序列的新算法. 首先通过一定角度的射线法来得到轮廓间的嵌套关系,然后采用扫描一次关系矩阵生成轮廓树的方法实现层内轮廓定位, 最后运用轮廓间定量、定性的属性判定来完成层间的轮廓匹配. 通过实例, 本文提供的算法可以准确、快速地分割CT零件中的轮廓序列.     

Sb，In，P掺杂对SnO_2薄膜透明导电性能的影响(英文)

采用溶胶凝胶(Sol-Gel)技术制备了SnO2:(Sb,In)透明导电薄膜,优化了制备工艺参数,获得了最佳制备条件,研究表明,4%的铟掺杂有效地改善了薄膜的内部结构,使得紫外-可见光的透过率显著增加;7%的锑掺杂释放出了更多的载流子,使薄膜的方块电阻降低,2%的磷掺杂因准连续杂质能带的形成进一步提高了薄膜的电导率.Sb、In、P的掺入使得SnO2薄膜的紫外-可见光的透过率达83%,方块电阻达38Ω/□     

Measurement and Analysis of Spall Characteristics of High-Pure Aluminium at One-Dimensional Strain Loading

With an impact velocity varying from 196.9m/s to 317.9m/s and ratios of flyer/sample thickness of 2：4 and 3：6, the free-surface velocity profiles of the shock compressed high purity aluminium （HPA 99.999%） samples are measured with a velocity interferometer system for any reflector. Based on the vibrating features of the velocity profiles, the damage behaviour of HPA is analysed. The results indicate that the vibrating amplitude increases with increasing shock stress, and the subsequent reverberations describing the spall become more obvious. When the shock stress in the material is below a critical or smaller than the threshold level, the free-surface velocity profile replicates virtually the form of the compression pulse inside the sample. When the impact stress exceeds a critical value （1.4 GPa）, the micro damage would appear, and the free-surface velocity profile changes significantly, showing a series of short-duration reverberations in the profile. When the impact stress exceeds the threshold of damage, a compressive disturbance called the ＂spall pulse＂ appears in the free-surface velocity profile, and the subsequent reverberation becomes regular again. The measured spall strength of HPA is much higher than those of commercially pure aluminium reported in many references. In addition, the strength of HPA is similar to that of single-crystal aluminium.     

Magnetic Properties and Nanostructures of FePtCu：C Thin Films with FePt Underlayers

Magnetic properties and nanostructures of FePtCu：C thin films with FePt underlayers （ULs） are studied. The effect of FePt ULs on the orlentation and magnetic properties of the thin films are investigated by adjusting FePt UL thicknesses from 2nm to 14nm. X-ray diffraction （XRD） scans reveal that the orientation of the films is dependent on FePt UL thickness. For a 5-nm FePtCu：C nanocomposite thin film with a 2-nm FePt UL, the coercivity is 6.S KOe, the correlation length is 59 nm, the desired face-centred-tetragonal （fct） ordered structure [Llo phase] is formed and the c axis normal to the film plane [（001） texture] is obtained. These results indicate that the beffer orientation and magnetic properties of the films can be tuned by decreasing the thockness of the FePt UL.     

GaN基紫光LED的高反射率p型欧姆接触

研究用于GaN基大功率倒装焊(Flip-chip)紫光LED(UV-LED)的高反射率p型欧姆接触的电学和光学性能。用磁控溅射的方法在GaN基LED外延片表面沉积了不同厚度Ag,Al,Au和Pd四种金属,测量了样品的反射率和透射率。结合同步辐射高强度X射线衍射和AFM对金属薄膜的晶体结构进行分析,并对表面形貌进行了观测,对由金属薄膜构成的多层膜结构及其对光反射率的作用机理进行了研究。测量结果表明,在入射光波长为400nm时,Ni/Au/Ag和Ni/Au/Al电极的反射率比Ni/Au的反射率提高了三倍。同时与p-GaN有良好的欧姆接触特性。     

群色散光纤中高强度光脉冲传输与压缩的研究

考虑非线性四阶折射率,推导了光脉冲在群色散单模光纤中传输的非线性方程,并得到孤子型解析解.同时指出在Sech型光纤脉冲压缩实验中,光强度的阈值.     

鲜牛奶变质过程的激光诱导荧光光谱研究

本文用激光诱导荧光（LIF）方法对鲜牛奶和酸牛奶变质过程进行了荧光光谱研究,介绍了所用测试系统的组成及测试方法,给出了变质过程荧光谱,并对测试结果进行了分析,研究表明,变质过程与荧光光谱之间存在密切联系。