Invariants of Multi-Component Ermakov Systems

It is shown that certain multi-component Ermakov systems admit Lewis-Ray-Reid invariants. This extends the result to the two-component Ermakov system.     

Study of the circumstance influence on the elemental distribution in ancient animal bone using μ-XRF

Elemental analysis of archaeological bone plays an important role in the study of the dietary habits of ancient animals. The elemental characteristic of diagenetic skeletons depends on the surrounding circumstance. The study of environmental influence on the elemental concentration of ancient bone is significant. In this paper, the diagenetic influence on archaeological skeletons is analyzed by microbeam X-ray fluorescence （p.-XRF）. The results show that the enamel is an excellent barrier to the diagenesis and the element Sr in bone isn＇t susceptible to contamination from the buried environment.     

Photonic Band Gap Properties of Three-Dimensional SiO2 Photonic Crystals

Three-dimensional SiO2 photonic crystals （PhCs） are fabricated on quartz substrates by the vertical deposition method. Scanning electron microscopy measurement reveals that the samples exhibit an ordered close-packed arrangement of SiO2 spheres. It is found that the position of the [111] photonie band gap （PBG） shifts to a long wavelength （red shift） with increasing sphere size. Gap broadening effects are observed due to the presence of defects in the samples. Moreover, the optical properties of the PBG are very sensitive to the annealing temperature. Our results indicate that the optical properties of the PBG can be easily tuned in the visible region by appropriate experimental parameters, which will be useful for practical applications of PhC optical devices.     

Permanent Magnetic Properties of Melt-Spun YCo5Cx Ribbons

Ribbons of nominal compositions YCo5 Cx （x = 0, 0.2, 0.4, 0.6） are prepared by melt spinning at surface velocities v = 5, 10, 15, 20, 25, 30 and 35 m/s. YCo5 ribbon is crystallized in a single YCo5 phase of hexagonal CaCu5 structure. A small quantity of YCoC2 phase appears in the ribbons with C addition besides the YCo5 phase. With the increase of x the lattice constant c increases and a along with the unit cell volume decreases. The largest values of iHc = 888 kA/m and （BH）max = 58.4 k Jim3 at present for the YCo5 ribbon system were obtained with x = 0.4 and v = 20 m/s. The improvement of the permanent magnetic properties is rooted in the refinement of the microstructure and the appearance of the YCoC2 phase which can act as domain wall pinning centers.     

Transition to Film Boiling in Microgravity： Influence of Subcooling

The transition process to film pool boiling in microgravity is studied experimentally aboard the Chinese recoverable satellite S J-8. A quasi-steady heating method is adopted, in which the heating voltage is controlled to increase exponentially with time. Small, primary bubbles are formed and slid on the surface, which coalesce with each other to form a large coalesced bubble. Two ways are observed for the transition from nucleate to film boiling at different subcoolings. At high subcooling, the coalesced bubble with a smooth surface grows slowly. It is then difficult for the coalesced bubble to cover the whole heater surface, resulting in a special region of transition boiling in which nucleate boiling and local dry areas can coexist. In contrast, strong oscillation of the coalesced bubble surface at low subcooling may cause rewetting of local dry areas and activation of more nucleate sites, resulting in an abrupt transition to film boiling.     

Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate

The double-side Tl2Ba2 CaCu2O8 （Tl-2212） superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Ti-2212 thin films on CeO2 buffered sapphire substrates were fabricated by adc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the e-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106K, the critical current density Jc is around 3.5 MA/cm^2 at 77K, and the microwave surface resistance R8 at 77K and 10 CHz of the film is as low as 390μ Ω.     

Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory

As the scaling-down of non-volatile memory （NVM） cells continues, the impact of shallow trench isolation （STI） on NVM cells becomes more severe. It has been observed in the 90nm localized charge-trapping non-volatile memory （NROMTM） that the programming efficiency of edge cells adjacent to STI is remarkably lower than that of other cells when channel hot electron injection is applied. Boron segregation is found to be mainly responsible for the low programming efficiency of edge cells. Meanwhile, an additional boron implantation of 10°tilt at the active area edge as a new solution to solve this problem is developed.     

Electronic,Vibrational, and Superconducting Properties of High-Pressure Metallic SiH4： ab initio Calculations

We extensively explore the experimentally proposed metallic structure of hcp P63 for the hydrogen rich compound, SiH4. It is found that the lattice dynamic of this structure is severely unstable. By freezing the soften mode, an orthorhombic Pbcn structure is discovered to be dynamically stable up to 226GPa. Within the conventional BCS theory, the calculated critical temperature Tc within the proposed Pbcn structure is 16.5K at 188GPa, in good agreement with the experimental result （17.5K）. Thus, we propose that the current predicted orthorhombic phase is a better candidate for the metallic phase of SiH4.     

Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions

Flexible vanadyl-phthalocyanine （VOPc） thin-film transistors are fabricated by the weak epitaxy growth （WEG） method. The devices show a mobility of 0.5 cm2/Vs, an on/off ratio of 105 and a low leakage current of 10-9 A. The performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. This results from the change of the trap density calculated by subthreshold slopes. The results indicate that VOPc films fabricated by the WEG method have good durability to flexing and possess great potential in flexible electronics.     

Neutron Spectroscopic Factors of ^7Li and Astrophysical ^6Li（n,γ）^7Li Reaction Rates

Angular distributions of the ^7Li（^6Li, ^6Li）^7Li elastic scattering and the ^7Li（^6Li, ^7Lig.s.）^6Li, ^7Li（^6Li, ^7Li0.48）^6Li transfer reactions at Ec.m. = 23.7 MeV are measured with the Q3D magnetic spectrograph. The optical potential of ^6Li ＋ ^7Li is obtained by fitting the elastic scattering differential cross sections. Based on the distorted wave Born approximation （DWBA） analysis, spectroscopic factors of ^7Li =^6Li n are determined to be 0.73 ± 0.05 and 0.90 ± 0.09 for the ground and first exited states in ^7Li, respectively. Using the spectroscopic factors, the cross sections of the ^6 Li（n, γ0,1）^7 Li direct neutron capture reactions and the astrophysical ^6Li（n, γ）^7 Li reaction rates are derived.