Near-infrared photorefractivity in Cr-doped potassium sodium strontium barium niobate single crystal

We report on the photorefractive properties of a Cr-doped (K_1–x Na _x )_2A–2 (Sr _y Ba_1–y )_2–A Nb₁₀O₃₀ (x=0.586, y=0.659, A=1.12) single crystal in the near-infrared spectrum. The sample exhibits photorefractivity for wavelengths up to at least 840 nm where the steady-state two-beam coupling gain is found to be larger than 2 cm^–1. Photorefractive gain and decay rate are measured as a function of wavelength, grating spacing and intensity. The wavelength dependence of gain fluctuations in two-beam coupling are also measured.     

Matrix representation of three-dimensional astigmatic resonators

Three-dimensional astigmatic resonators, typical examples of which are the resonators bounded by cylindrical-spherical mirrors and cylindrical-cylindrical mirrors oriented at an arbitrary crossed angle, are investigated in detail by using a complex curvature tensor concept and generalized tensor ABCD law. Computerized numerical calculations illustrate some interesting characteristics of these astigmatic resonators.     

EPR and 1H and 13C dynamic nuclear polarization studies of a molecularly doped polymer: bisphenol A polycarbonate doped with trianisylamine and trianisylaminium perchlorate.

We have investigated the EPR and DNP behavior of a molecularly doped polymer modeling those used to transport electronic charge in electrophotography. The EPR spectra show no evidence of the superexchange reported for a closely related system based on tri-p-tolylamine. The difference may be due to larger charge-transfer matrix elements in the latter system. An unambiguous interpretation of the observed 1H DNP was rendered difficult by the unanticipated asymmetry of the EPR spectra. We report extensive data on the "three-spin" effect evident in the DNP-enhanced 13C NMR spectra, and comment on its potential for characterizing polymer interfaces.     

Analysis of nasal consonants using perceptual linear prediction.

Until recently, speech analysis techniques have been built around the all-pole linear predictive model. This study examines the effectiveness of using the perceptual linear predictive method for analyzing nasal consonants. Six speakers (three men and three women) produced 300 CV syllables with initial nasal consonants /m/ and /n/. A threshold-based boundary detection algorithm was developed to extract nasal segments from the CV contexts. Poles of a fifth-order perceptual linear predictive model were calculated and the frequency of the second pole was used to characterize the place of articulation of nasal consonants. Results indicated that the frequency for the second transformed pole was significantly lower for /m/ than for /n/ and was independent of factors such as a vowel context and gender of the speaker. A nasal identification rate of 86% was obtained based on the frequency of the second pole. The use of the perceptual linear predictive method may thus overcome some difficulties associated with analyzing nasal consonants.     

10-Gbit/s optical receiver using ICs with low-capacitance HBT technology

A 10-Gbit/s optical receiver is developed using low-capacitance HBT IC technology. The HBT allows a cutoff frequency of 45 GHz and a maximum oscillation frequency of 70 GHz. The receiver contains an automatic gain-control amplifier IC with a gain of 16 dB, a bandwidth of 10.7 GHz, and a decision-circuit IC with an ambiguity of 66 mVp-p at a data rate of 10 Gbit/s. The sensitivity of this receiver is -26.5 dBm at a bit error rate of 10^-9. Transmission over a 140-km fiber was achieved successfully.     

Absolute fluorescence quantum efficiency of GSGG : Cr at ambient temperature

The absolute fluorescence quantum efficiencies of three GSGG : Cr³⁺ samples have been determined at specific excitation wavelengths for the ⁴T₁and ⁴T₂ absorption bands using a novel photocalorimetric compensation technique [1]. For laser excitation in the ⁴T₁ and ⁴T₁ bands, the technique yields the same fluorescence quantum efficiency within experimental error for all three samples, viz. 0.840 ± 0.015. The effect of flourescence reabsorption on the measurements is discussed.     

Directed paths with random phases

Directed Feynman paths in 1 + 1 dimensions that acquire random phases are examined numerically and analytically. This problem is relevant for the behavior of the conductance in two-dimensional amorphous insulators in the variable-range-hopping regime. Large-scale numerical simulations were performed on a model with short-range correlations. For the scaling of the transverse fluctuations ( t^ν), we obtain ν = 0.68 ± 0.025; and for the r.m.s free-energy fluctuations ( t^ω), we obtain ω = 0.335 ± 0.01. Up to 100 000 random samples were used for times as large as 2000. These results seem to exclude a recent conjecture that ν = 3/4 and ω = 1/2. Two versions of a model with long-range correlations are solved and shown to yield ν = 1/2; a physical explanation is given.     

磁共振弹性成像技术在肝纤维化检测中的研究

对肝脏组织的弹性应力分析在肝纤维化程度的精确定量评价方面是非常关键的,因此从弹性力学角度结合磁共振成像技术的磁共振弹性成像研究在肝脏疾病的早期诊断和治疗方面将具有重要意义和广泛应用. 该文针对弹性磁共振成像技术的理论与技术进行了全面的研究,开发了磁共振弹性图研究平台,主要包括：组织生物力学模型分析与建模,剪切波激励装置的开发,弹性成像序列的设计,弹性拟合算法研究与实现4个方面的工作. 基于上述工作,进行了相关体模和离体猪肝以及志愿者在体肝脏实验,实验结果表明,研究平台基本可以满足肝脏弹性成像研究的需要.     

Study of γ d → π + π − d Reaction in an Energy Region of 0.67 ≤ E γ ≤ 1.08 GeV

Double charged pion photoproductions from the deuteron have been studied at Research Center for Electron Photon Science (ELPH), Tohoku University. Tagged photon beams in an energy range of 0.67 ≤ E _γ ≤ 1.08 GeV were impinged on the liquid deuteron target. Produced charged particles were observed with the Neutral Kaon Spectrometer2 (NKS2). The γ d → π ⁺ π ^? d process was clearly separated among the three charged tracks. We obtained the photon energy dependence of the normalized yields of this process.     

Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching

The gap filling of phase change material has become a critical module in the fabrication process of phase change random access memory (PCRAM) as the device continues to scale down to 45 nm and below. However, conventional physical vapor deposition process cannot meet the nanoscale gap fill requirement anymore. In this study, we found that the pulsed deposition followed by inductively coupled plasma etching process showed distinctly better gap filling capability and scalability than single-step deposition process. The gap filling mechanism of the deposit–etch–deposit (DED) process was briefly discussed. The film redeposition during etching step was the key ingredient of gap filling improvement. We achieved void free gap filling of phase change material on the 30 nm via with aspect ratio of 1:1 by two-cycle DED process. The results provided a rather comprehensive insight into the mechanism of DED process and proposed a potential gap filling solution for 45 nm and below technology nodes for PCRAM.