Efficient continuous-wave eye-safe region signal output from intra-cavity singly resonant optical parametric oscillator

We report an efficient continuous-wave (CW) tunable intra-cavity singly resonant optical parametric oscillator based on the multi-period periodically poled lithium niobate and using a laser diode (LD) end-pumped CW 1064 nm Nd:YVO₄ laser as the pump source. A highly efficiency CW operation is realized through a careful cavity design for mode matching and thermal stability. The signal tuning range is 1401-1500 nm obtained by varying the domain period. The maximum output power of 2.2 W at 1500 nm is obtained with a 17.1 W 808 nm LD power and the corresponding conversion efficiency is 12.9%.     

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1>Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.     

Improved interframe registration based nonuniformity correction for focal plane arrays

In this paper, an improved interframe registration based nonuniformity correction algorithm for focal plane arrays is proposed. The method simultaneously estimates detector parameters and carries out the nonuniformity correction by minimizing the mean square error between the two properly registered image frames. A new masked phase correlation algorithm is introduced to obtain reliable shift estimates in the presence of fixed pattern noise. The use of an outliers exclusion scheme, together with a variable step size strategy, could not only promote the correction precision considerably, but also eliminate ghosting artifacts effectively. The performance of the proposed algorithm is evaluated with clean infrared image sequences with simulated nonuniformity and real pattern noise. We also apply the method to a real-time imaging system to show how effective it is in reducing noise and the ghosting artifacts.     

Infrared broadband emission of bismuth–thulium co-doped lanthanum–aluminum–silica glasses

The Bi–Tm co-doped SiO₂–Al₂O₃–La₂O₃ (SAL) glasses, which exhibited a broadband near-infrared (NIR) emission was investigated by the optical absorption and photoluminescence spectra. The super broadband near-infrared emission from 1000 to 2100 nm, which covered the whole O, E, S, C and L bands, was observed in the Bi–Tm co-doped samples, as a result of the overlap of the Bi-related emission band (centered at 1270 nm) and the emission from Tm^{3+ 3}H₄→³F₄ transition (1440 nm) as well as Tm^{3+ 3}F₄→³H₆ transition (1800 nm). Relative luminescence intensity at 1270, 1440 and 1800 nm wavelength varied depending on the mixing ratio of Bi and Tm and the full-width at half-maximum (FWHM) extending from 1000 to 1600 nm could be 400 nm. These results indicated that Bi–Tm co-doped SiO₂–Al₂O₃–La₂O₃ glasses could provide potential applications in tunable lasers as well as the broadband optical amplifiers in WDM system.     

Low-temperature electrolytic coloration and spectral property of ammonium alum crystals

Ammonium alum crystals are colored electrolytically using a pointed cathode and a flat anode at low temperatures and under various voltages. SO₃^?, SO₂^? and O₃^? hole-trapped centers are produced in colored ammonium alum crystals. Characteristic absorption bands of SO₃^?, SO₂^? and O₃^? hole-trapped centers are observed in absorption spectra of colored ammonium alum crystals. Production and conversion of hole-trapped centers are explained. Current–time curves for electrolytic coloration of ammonium alum crystal and their relationship with electrolytic coloration process are given.     

Ferromagnetism of 3He films in the low-field limit

We provide evidence for a finite-temperature ferromagnetic transition in two dimensions as H -->0 in thin films of 3He on graphite, a model system for the study of two-dimensional magnetism. We perform pulsed and cw NMR experiments at fields of 0.03-0.48 mT on 3He at areal densities of 20.5-24.2 atoms/nm(2). At these densities, the second layer of 3He has a strongly ferromagnetic tendency. With decreasing temperature, we find a rapid onset of magnetization that becomes independent of the applied field at temperatures in the vicinity of 1 mK. Both the dipolar field and the NMR linewidth grow rapidly as well, which is consistent with a large (order unity) polarization of the 3He spins.     

Field—ion microscopy observation of single—walled carbon nanotubes

Field-ion microscopy(FIM),a tool for surface analysis with atomic resolution,has been employed to observe the end structure of single-walled carbon nanotubes(SWCNTs).FIM images revealed the existence of open SWCNT ends,Amorphous carbon atoms were also observed to occur around SWCNTs and traditional field evaporation failed to remove them.Heat treatment was found to be efficacious in altering the end structures of SWCNT bundles.Carbon and oxygen atoms released from heated tungsten filament are believed to be responsible for the decoration imposed on the SWCNT ends.     

Modulational instability of ion—acoustic waves in a warm plasma

Using the standard reductive perturbation technique,a nonlinear Schroedinger equation is derived to study the modulational instability of finite-amplitude ion-acoustic waves in a non-magnetized warm plasma.It is found that the inclusion of ion temperature in the equation modifies the nature of the ion-acoustic wave stability and the soliton stuctures.The effects of ion plasma temperature on the modulational stability and ion-acoustic wave properties are inestigated in detail.     

多脉冲加载下材料的绝缘特性

利用多脉冲实验平台分别对尼龙与交联聚苯乙烯两种绝缘材料在单脉冲与三脉冲两种不同加载条件下的绝缘特性差异进行初步研究,得到了两种绝缘材料在不同加载条件下沿面闪络场强的统计平均值,结合实验现象对所得实验结果做出了初步分析。通过进行单脉冲与三脉冲加载条件下材料沿面闪络场强的对比实验,为新型绝缘器件设计中相关参数的确定提供了实验依据。