High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

Fixed point behavior of cumulants in the three-dimensional Ising universality class

High-order cumulants and factorial cumulants of conserved charges are suggested for the study of the critical dynamics in heavy-ion collision experiments. In this paper, using the parametric representation of the three-dimensional Ising model which is believed to belong to the same universality class as quantum chromo-dynamics, the temperature dependence of the second- to fourth-order (factorial) cumulants of the order parameter is studied. It is found that the values of the normalized cumulants are independent of the external magnetic field at the critical temperature, which results in a fixed point in the temperature dependence of the normalized cumulants. In finite-size systems simulated using the Monte Carlo method, this fixed point behavior still exists at temperatures near the critical. This fixed point behavior has also appeared in the temperature dependence of normalized factorial cumulants from at least the fourth order. With a mapping from the Ising model to QCD, the fixed point behavior is also found in the energy dependence of the normalized cumulants (or fourth-order factorial cumulants) along different freeze-out curves.     

主成分分析排序和模糊线性判别分析的生菜近红外光谱分类

贮存时间是影响生菜品质的一项重要因素,传统的贮存时间鉴别方法主要依靠人工经验,但是这种方法的准确率和可信度并不高。研究的目标是建立一种基于模糊识别的模型进行生菜光谱分析以实现生菜贮存时间的鉴别,并与其他鉴别方法作比较。为此,在当地超市购买60份新鲜生菜样品,存放于冰箱中待用。首先,通过AntarisⅡ近红外光谱检测仪采集生菜样品的近红外光谱数据,每隔12小时检测一次,每个样本检测重复三次,并取三次平均值作为实验数据。其次,利用多元散射校正(MSC)减少近红外光谱中的冗余信息。为了进一步去除近红外光谱中的无用信息以及简化随后的数据分类过程,分别运用主成分分析(PCA)和排序主成分分析(PCA Sort)。其中,PCA Sort通过改进对主成分的排序方法能提高分类准确率,同时便于模糊线性鉴别分析(FLDA)进一步提取特征。PCA和PCA Sort的计算仅运用了前15个主成分(能充分反映光谱的主要信息)。最后,利用模糊线性鉴别分析算法(FLDA)和K近邻算法(KNN)进一步分类所得的低维数据。基于PCA和KNN算法的模型鉴别准确率达到43%,而基于PCA, FLDA和KNN算法的模型鉴别准确...     

Progress of microscopic thermoelectric effects studied by micro- and nano-thermometric techniques

Heat dissipation is one of the most serious problems in modern integrated electronics with the continuously decreasing devices size. Large portion of the consumed power is inevitably dissipated in the form of waste heat which not only restricts the device energy-efficiency performance itself, but also leads to severe environment problems and energy crisis. Thermoelectric Seebeck effect is a green energy-recycling method, while thermoelectric Peltier effect can be employed for heat management by actively cooling overheated devices, where passive cooling by heat conduction is not sufficiently enough. However, the technological applications of thermoelectricity are limited so far by their very low conversion efficiencies and lack of deep understanding of thermoelectricity in microscopic levels. Probing and managing the thermoelectricity is therefore fundamentally important particularly in nanoscale. In this short review, we will first briefly introduce the microscopic techniques for studying nanoscale thermoelectricity, focusing mainly on scanning thermal microscopy (SThM). SThM is a powerful tool for mapping the lattice heat with nanometer spatial resolution and hence detecting the nanoscale thermal transport and dissipation processes. Then we will review recent experiments utilizing these techniques to investigate thermoelectricity in various nanomaterial systems including both (two-material) heterojunctions and (single-material) homojunctions with tailored Seebeck coefficients, and also spin Seebeck and Peltier effects in magnetic materials. Next, we will provide a perspective on the promising applications of our recently developed Scanning Noise Microscope (SNoiM) for directly probing the non-equilibrium transporting hot charges (instead of lattice heat) in thermoelectric devices. SNoiM together with SThM are expected to be able to provide more complete and comprehensive understanding to the microscopic mechanisms in thermoelectrics. Finally, we make a conclusion and outlook on the future development of microscopic studies in thermoelectrics.     

Tunable Upconversion Emissions from Lanthanide-doped Monodisperse β-NaYF4 Nanoparticles

We report upconversion multicolor tuning based on uniform β-NaYF₄:Yb/Tm/Er nanoparticles. The as-synthesized nanoparticles with an average diameter of 25 nm are well dispersed in a wide range of nonpolar solvents including hexane, cyclohexane, dichloromethane, and toluene. These nanoparticles show intense upconversion emissions and the color output can be precisely modulated by adjusting activator ratios of Tm³⁺ to Er³⁺. Dopant-concentration dependent emission properties of the triply doped particle system are also investigated. In addition, we demonstrate that these nanoparticles can be readily transferred to polar solvents such as ethanol and water by growing a thin silica layer (10 nm) around the particles, providing potential applications in biological labeling and imaging.     

不同磁场环境下Heisenberg XXZ自旋链中的热量子失协

本文研究了不同磁场环境下一维Heisenberg XXZ自旋链中两量子比特的热量子失协特性. 在四种不同的磁场环境下: 1) B₁=B₂=0 (无磁场); 2) B₁≠0, B₂=0 (磁场只作用于其中一个量子比特); 3) B₁=B₂ (均匀磁场); 4) B₁=-B₂ (非均匀磁场), 对分别作用在每个量子比特上的磁场B₁和B₂对其量子关联的影响作了详细的讨论, 且数值计算和比较了其量子失协和量子纠缠的异同. 结果显示: 在有限温度下, 量子失协相比于量子纠缠更普遍, 且非均匀磁场相比于均匀磁场对量子失协和量子纠缠更有用, 更有利于量子通讯和量子信息处理过程. 关键词： 量子关联 纠缠 量子失协     

ZnMgO/ZnO异质结构中二维电子气的研究

论文根据ZnMgO/ZnO异质结构二维电子气的能带结构及相关理论模型, 采用一维Poisson-Schrodinger方程的自洽求解, 模拟计算了ZnMgO/ZnO异质结构中二维电子气的分布及其对ZnMgO势垒层厚度及Mg组分的依赖关系. 研究发现该异质结构中ZnMgO势垒层厚度存在一最小临界值: 当垒层厚度小于该临界值时, 二维电子气消失, 当垒层厚度大于该临界值时, 其二维电子气密度随着该垒层厚度的增加而增大; 同时研究发现ZnMgO势垒层中Mg组分的增加将显著增强其二维电子气的行为, 导致二维电子气密度的明显增大; 论文对模拟计算获得的结果与相关文献报道的实验结果进行了比较, 并从极化效应和能带结构的角度进行了分析和讨论, 给出了合理的解释. 关键词： 氧化锌 二维电子气 异质结构 理论计算     

Nonisothermal Crystallization Behavior of Polypropylene Grafted Silane and Styrene Using γ-Ray Irradiation

Polypropylene grafted silane and styrene (named PP-g-Si/St in this article) was successfully prepared by radical graft polymerization initiated by γ-ray irradiation. The influence of total absorbed dose on the graft ratio of vinyltrimethoxysilane onto PP and the melt flow rate (MFR) of the PP-g-Si/St product were studied. The effect of graft ratios of vinyltrimethoxysilane on the melting point and nonisothermal crystallization kinetics of PP-g-Si/St was investigated by the method of differential scanning calorimetry (DSC). With increasing vinyltrimethoxysilane and styrene (used as viscosity modifier and free radical source) grafted on PP, the melting point of PP-g-Si/St became lower. Several different analysis methods, including those of Avrami, Jeziorny, and Mo and colleagues, were employed to describe the nonisothermal crystallization process of the grafted samples. The results indicate that the peak temperature of crystallization of PP-g-Si/St sample was lower than that of virgin PP. Crystallization kinetics revealed that the rates of nucleation and growth were affected differently by the graft ratio of vinyltrimethoxysilane onto PP. The activation energy was calculated on the basis of the method of Kissinger, and the values were 253.6 and 215.7 kJ/mol for virgin PP and PP-g-Si/St, respectively.     

A cell-based study on pedestrian acceleration and overtaking in a transfer station corridor

Pedestrian speed in a transfer station corridor is faster than usual and sometimes running can be found among some of them. In this paper, pedestrians are divided into two categories. The first one is aggressive, and the other is conservative. Aggressive pedestrians weaving their way through crowd in the corridor are the study object of this paper. During recent decades, much attention has been paid to the pedestrians’ behavior, such as overtaking (also deceleration) and collision avoidance, and that continues in this paper. After sufficiently analyzing the characteristics of pedestrian flow in transfer station corridor, a cell-based model is presented in this paper, including the acceleration (also deceleration) and overtaking analysis. Acceleration (also deceleration) in a corridor is fixed according to Newton’s Law and then speed calculated with a kinematic formula is discretized into cells based on the fuzzy logic. After the speed is updated, overtaking is analyzed based on updated speed and force explicitly, compared to rule-based models, which herein we call implicit ones. During the analysis of overtaking, a threshold value to determine the overtaking direction is introduced. Actually, model in this paper is a two-step one. The first step is to update speed, which is the cells the pedestrian can move in one time interval and the other is to analyze the overtaking. Finally, a comparison between the rule-based cellular automata, the model in this paper and data in HCM 2000 is made to demonstrate our model can be used to achieve reasonable simulation of acceleration (also deceleration) and overtaking among pedestrians.     

粗糙度对大高宽比槽道内流动影响的数值模拟

基于确定表面粗糙结构形状的PML模型模拟表面粗糙度对大高宽比小槽道内流动特性的影响,并与3-D模拟结果对比,结果较为一致.基于该模型对不同的流速和不同的粗糙度进行模拟,结果表明:表面粗糙度导致槽道内出现速度线性分布的流动底层.Re数相同时,单位长度压降与相对粗糙度成二次方关系.粗糙单元高度相同时,压降随Re线性增加.