Black phosphorus saturable absorber for ultrafast mode‐locked pulse laser via evanescent field interaction

Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most recent studies have shown that the material has an excellent optical nonlinearity useful in many areas, one of which is in saturable absorption for passive mode‐locking. A direct interaction scheme for mode‐locking, however, has a potential to optically cause permanent damage to the already delicate material. Evanescent field interaction scheme has already been proven to be a useful method to prevent such danger for other 2‐dimensional nanomaterials. In this report, we have utilized the evanescent field interaction to demonstrate that the optical nonlinear characteristics of BP is sufficiently strong to use in such an indirect interaction method. The successful demonstration of the passive mode‐locking operation has generated pulses with the pulse duration, repetition rate, and time bandwidth product of 2.18 ps, 15.59 MHz, and 0.336, respectively.     

Self-referenced continuous-variable measurement-device-independent quantum key distribution

We propose a scheme to remove the demand of transmitting a high-brightness local oscillator (LO) in continuous-variable measurement-device-independent quantum key distribution (CV-MDI QKD) protocol, which we call as the self-referenced (SR) CV-MDI QKD. We show that our scheme is immune to the side-channel attacks, such as the calibration attacks, the wavelength attacks and the LO fluctuation attacks, which are all exploiting the security loopholes introduced by transmitting the LO. Besides, the proposed scheme waives the necessity of complex multiplexer and demultiplexer, which can greatly simplify the QKD processes and improve the transmission efficiency. The numerical simulations under collective attacks show that all the improvements brought about by our scheme are only at the expense of slight transmission distance shortening. This scheme shows an available method to mend the security loopholes incurred by transmitting LO in CV-MDI QKD.     

基于P-N结的太阳能电池伏安特性的分析与模拟

通过分析实际P-N结与理想模型之间的差别,建立了P-N结二极管及太阳能电池的数学模型;利用Matlab中的系统仿真模块库建立仿真模型,设置参量,求解模型方程并绘制了图形.对太阳能电池在一定光照下旁路电阻及串联电阻取不同数值时对其开路电压、短路电流及填充因子的影响做了模拟,并与实际测得的硅太阳能电池伏安特性进行了比较.模型分析与实验测量的结果表明:等效的旁路电阻和串联电阻分别影响电池的开路电压和短路电流.仿真结果与实验测量结果一致.     

A comparative study on diode-pumped continuous wave Tm:Ho:YVO<Subscript>4</Subscript> and Tm:Ho:GdVO<Subscript>4</Subscript> lasers

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.     

Accelerating image registration of MRI by GPU-based parallel computation

Automatic image registration for MRI applications generally requires many iteration loops and is, therefore, a time-consuming task. This drawback prolongs data analysis and delays the workflow of clinical routines. Recent advances in the massively parallel computation of graphic processing units (GPUs) may be a solution to this problem. This study proposes a method to accelerate registration calculations, especially for the popular statistical parametric mapping (SPM) system. This study reimplemented the image registration of SPM system to achieve an approximately 14-fold increase in speed in registering single-modality intrasubject data sets. The proposed program is fully compatible with SPM, allowing the user to simply replace the original image registration library of SPM to gain the benefit of the computation power provided by commodity graphic processors. In conclusion, the GPU computation method is a practical way to accelerate automatic image registration. This technology promises a broader scope of application in the field of image registration.     

Analyzing radiation absorption difference of dental substance by using Dual CT

The purpose of this study was to evaluate the changes of noise and computer tomography (CT) number in each dental substance, by using the metal artefact reduction algorithm; we used dual CT for this study. For the study, we produced resin, titanium, gypsum, and wax that are widely used by dentists. In addition, we made nickel to increase the artefact. While making the study materials, we made sure that there is no difficulty when inserting the substances inside phantom. In order to study, we scanned before and after using the metal artefact reduction algorithm. We conducted an average analysis of CT number and noise, before and after using the metal artefact reduction algorithm. As a result, there was no difference in CT number and noise before and after using the metal artefact reduction algorithm. However, when it comes to the noise value in each substance, wax's noise value was the lowest whereas titanium's noise value was the highest, after applying the metal artefact reduction algorithm. In nickel, CT number and noise value from artefact area showed a decreased noise value when applying the metal artefact reduction algorithm. In conclusion, we assumed that we could increase the effectiveness of CT examination by applying dual energy's metal artefact reduction algorithm.     

Influence of SiNx:H film properties according to gas mixture ratios for crystalline silicon solar cells

The Hydrogenated silicon nitride (SiN_x:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiN_x:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH₄ + NH₃ + N₂, SiH₄ + NH₃, SiH₄ + N₂), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation (electrical and chemical) properties. The film deposited with the gas mixture of SiH₄ + NH₃ + N₂ showed the best properties in before and after firing process conditions.The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH₄ + NH₃ + N₂) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2%. The reason for the high efficiency using SiH₄ + NH₃ + N₂ is because of the good optical transmittance and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.     

非线性光学及其若干新进展

扼要介绍了非线性光学的基本概念及其最近10年来在飞秒激光，半导体材料，光纤通信和光信息存储等若干方面的研究进展。