多维耦合受迫量子谐振子的普遍解

运用广义线性量子变换的普遍理论求解多维耦合受迫量子谐振子，给出了系统演化算符的矩阵元、波函数、力学量期望值和配分函数的严格表达式. 关键词： 多维耦合受迫量子谐振子 演化算符矩阵元 配分函数     

电子束辐照烟气脱硫脱氮反应器中的剂量分布的模拟计算

采用Monte-Carlo程序EGSnrcMP对能量为0.8MeV的电子束辐照烟气脱硫脱硝反应器中的剂量分布进行了模拟计算,将计算的结果运用MATLAB数学分析软件进行了数据处理,对能量为0.5MeV的电子束辐照烟气脱硫脱硝反应器中的剂量分布进行了模拟计算,并与文献中实验测量值进行了比较。结果表明:采用EGSnrcMP程序计算所得到的剂量与实验结果吻合。     

Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at E_v+0.128~eV, originates from the vacancy of Cd (V_Cd. The electron trap E1, found at E_c-0.178~eV, is considered to be correlated with the interstitial Cu_i⁼ in CdTe.     

彩色负片印片颗粒指数的准确测定

分析了彩色负片印片颗粒指数σper实际测试中不同性能负片的测试特点和影响因素。印片颗粒指数的测试点应根据彩色负片的感光特性确定,为正常扩印时对应正片0．74中灰密度的负片密度点。影响印片颗粒指数值的两个主要因素是彩色相纸的反差修正系数α和彩色负片的覆盖力系数ECP;建立了α和ECP的实验求取方法,并通过对几种负片参量的实际测定,分析和说明了参量变化对印片颗粒指数数值的影响程度和应进行的修正。     

Coherent beam combination of adaptive fiber laser array with tilt-tip and phase-locking control

We present an experimental study on tilt-tip(TT) and phase-locking(PL) control in a coherent beam combination(CBC) system of adaptive fiber laser array.The TT control is performed using the adaptive fiber-optics collimator(AFOC),and the PL control is realized by the phase modulator(PM).Cascaded and simultaneous controls of TT and PL using stochastic parallel gradient descent(SPGD) algorithm are investigated in this paper.Two-fiber-laser-,four-fiber-laser-,and six-fiber-laser-arrays are employed to study the TT and PL control.In the cascaded control system,only one high-speed CMOS camera is used to collect beam data and a computer is used as the controller.In a simultaneous control system one high-speed CMOS camera and one photonic detector(PD) are employed,and a computer and a control circuit based on field programmable gate array(FPGA) are used as the controllers.Experimental results reveal that both cascaded and simultaneous controls of TT using AFOC and PL using PM in fiber laser array are feasible and effective.Cascaded control is more effective in static control situation and simultaneous control can be applied to the dynamic control system directly.The control signals of simultaneous PL and TT disturb each other obviously and TT and PL control may compete with each other,so the control effect is limited.     

一种测量物质折射率的新方法—Eu3+离子发射光谱法

本文提出一种利用Eu3+离子发射光谱来测定物质析射率的方法,使可测对象不仅限于晶体和玻璃,而且扩展到粉末样品.用此方法检验几种已知析射率的材料,都得到较好的符合.     

周期性磁谐振材料本构参数的理论分析

将薄的磁谐振介质板等效为面磁流, 利用周期性边界条件, 给出了面磁流的指数形式. 通过计算无穷个面磁流在不同空间位置上产生的总电场和总磁场, 推导出了周期性磁谐振人工材料的色散关系和布洛赫阻抗, 进而获取了布洛赫本构参数的理论计算公式. 由于考虑了磁谐振人工材料中的电反谐振对布洛赫介电常数和磁导率的影响, 所以基于仿真实验的布洛赫本构参数的提取值和布洛赫本构参数理论预测值之间的误差很小, 这说明本文推导的布洛赫本构参数的理论计算公式在描述周期性磁谐振材料的电磁特性方面是十分有效的. 这些理论公式将在解释磁谐振现象、设计和优化周期性磁谐振材料等方面提供重要的理论依据. 关键词： 周期性结构 磁谐振 布洛赫本构参数 面磁流     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

New bifurcations of basin boundaries involving Wada and a smooth Wada basin boundary

This paper demonstrates and analyses double heteroclinic tangency in a three-well potential model, which can produce three new types of bifurcations of basin boundaries including from smooth to Wada basin boundaries, from fractal to Wada basin boundaries in which no changes of accessible periodic orbits happen, and from Wada to Wada basin boundaries. In a model of mechanical oscillator, it shows that a Wada basin boundary can be smooth.     

Short Tm3+-doped fiber lasers with watt-level output near 2 μm

High-power operation of diode-pumped fiber lasers at wavelength near 2μm are demonstrated with short length of heavily Tm3 -doped silica glass fibers. With 7-cm long fiber, a laser at near 2 μm is obtained with the threshold of 135 mW, maximum output power of 1.09 W, and slope efficiency of 9.6% with respect to the launched power from a laser diode at 790 nm. The output stability of this fiber laser is within 5%.The dependence of the performance of fiber lasers on the operation temperature and cavity configuration parameters is also investigated.