Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiation

The effect of 2.0 MeV Cu⁺ irradiation on Si(100) crystal has been studied by the Rutherford backscattering/channeling technique. Analysis of the lattice disorder distribution has been performed under 100 direction of tilting off from the target normal: 7°, 30°, and 45° as well as different doses. The lattice disorder distributions in Si(100) have been compared with TRIM'89 simulation. The results show that the lattice disorder distributions in Si(100) under different irradiation angles seem to be in good agreement with TRIM'89 simulation. When the dose increases up to 8.7×10¹⁴ ions/cm², the defect concentration increases leading to the formation of an amorphous layer.