加强型Bi-2212超导股线有限元拉伸性能分析

为探究加强型Bi-2212超导股线的力学性能以及不锈钢包带对超导股线力学性能的影响,运用Ansys软件建立加强型Bi-2212超导股线的三维模型,采用有限元分析方法,对其机械结构进行仿真,模拟高温高压热处理后轴向受拉形变量和应力应变分布情况。仿真结果显示,在同样施加100 N拉力的情况下,与超导原线（Bi-2212超导线）相比,密绕Ni₈₀Cr₂₀包带后的加强型Bi-2212超导股线轴向受拉形变程度减小,约10%;应力应变均降低,约30%。采用Ni₈₀Cr₂₀作为外包带制成的加强型Bi-2212超导股线力学性能显著,是未来超导线发展方向之一。     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

Variational principles for two kinds of extended Korteweg—de Vries equations

Variational principles are constructed using the semi-inverse method for two kinds of extended Korteweg—de Vries (KdV) equations, which can be regarded as simple models of the nonlinear oceanic internal waves and atmospheric long waves, respectively. The obtained variational principles have also been proved to be correct.     

72Ge40的低激发态能级研究

用低本底反康谱仪(HpGe–NaI)和HpGe–HpGe的三参数符合γ–γ–T系统,对72Ga的衰变γ单谱、符合谱进行了研究,实验共获得2.3×10⁷个符合事件.根据实验结果建立了含有26个能级、87条γ射线的72Ga的衰变能级纲图,其中包含首次测到7条γ射线225.92、826.97、1349.71、1475.32、1667.91、2105.28、2247.39keV和4个能级3248.01、3396.27、3806.10、3864.56keVS并为2939.83keV能级和112.59、937.97、2402.25、2939.95keV4条γ射线的存在提供了证据;实验没有发现113.5、1155.7、1192.4keVγ射线和能级3307.1keV存在的证据。并把317.72keVγ射线的跃迁,由原来的能级3757.26keV跃迁到3439.51keV能级,改为3565.85keV到3248.01keV能级跃迁.     

Thermodynamic Resolution of Pharmaceutical Precursor Modafinil Acid on the Basis of Chiral-at-Metal Strategy

Main observation and conclusion Chiral-at-metal strategy was developed to resolve the essential sulfoxide pharmaceutical intermediates R-modafinil acid and its ...     

纵磁作用下真空电弧单阴极斑点等离子体射流三维混合模拟

真空电弧的特性直接受到从阴极斑点喷射出的等离子体射流的影响,对等离子体射流进行数值仿真有助于我们深入了解真空电弧的内部物理机制.然而,磁流体动力学和粒子云网格仿真方法受限于计算精度和计算效率的原因,无法有效地应用于真空电弧等离子体射流仿真模拟.本文开发了一套三维等离子体混合模拟算法,并在此基础上建立了真空电弧单阴极斑点...     

13CH4分子v3振动带空气和氮气加宽系数温度依赖性研究

采用中红外波段连续可调谐二极管激光器和自行研制的低温吸收池, 测量了温度为296 K, 252 K, 213 K, 173 K时, 3.38 μm附近¹³CH₄分子的四条跃迁谱线的氮气和空气加宽光谱; 首次通过实验获得空气和氮气对¹³CH₄分子的碰撞加宽系数, 以及谱线加宽系数的温度依赖系数. 实验过程中, 利用Voigt线型对所测量的光谱进行拟合. 实验结果表明, 氮气和空气对¹³CH₄分子的碰撞诱导加宽系数随温度的降低而增大; 相同温度下, 氮气对¹³CH₄分子的碰撞加宽系数普遍大于空气加宽系数. 实验数据为地球和外星体大气遥感探测提供了依据.     

复宗量Laguerre-Gauss光束在强非局域非线性介质中的传输

研究得到了偏离束腰入射的复宗量Laguerre-Gauss光束在强非局域非线性介质中传输的解析表达式,并且得到了其二阶矩束宽的解析解.通过例子研究了偏离束腰入射的复宗量Laguerre-Gauss光束在强非局域非线性介质中传输性质.结果表明：非(0, m)模的复宗量Laguerre-Gauss光束的光束形状随着传输而发生改变,并以Δz=πz_c为周期做周期性演化.而(0,m)模复宗量Laguerre-Gauss光束在演化过程中则形状保持不变,仅改变光束宽度;不论功率多大,在偏离束腰入射条件下总是表现为呼吸子;只有当其为束腰入射,并且入射功率等于临界功率时才能形成孤子.     

Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions

In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide(β-FeSi2) as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.