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121.
In this paper, we investigate strict stability of differential systems by variational Lyapunov function. We obtain some sufficient conditions and comparison theorems. 相似文献
122.
田兴 《新疆大学学报(理工版)》1991,8(1):53-55
本文分析计算了荧光光纤温度传感器的温敏元件——GsAlAs/GaAs双异质结半导体材料的荧光辐射效率与激励光波长的关系。讨论了温度测量范围及温敏元件GaAlAs层铝含量对激励光源的限制,在0~200℃测温范围内,若采用LED作激励光源,其峰值波长应在0.70~0.76μm之间选择。 相似文献
123.
Zhongfan Jia Qiang Fu Junlian Huang 《Journal of polymer science. Part A, Polymer chemistry》2006,44(12):3836-3842
A new stratagem for the synthesis of amphiphilic graft copolymers of hydrophilic poly(ethylene oxide) as the main chain and hydrophobic polystyrene as the side chains is suggested. A poly(ethylene oxide) with pending 2,2,6,6‐tetramethylpiperidine‐1‐oxyls [poly(4‐glycidyloxy‐2,2,6,6‐tetramethylpiperidine‐1‐oxyl‐co‐ethylene oxide)] was first prepared by the anionic ring‐opening copolymerization of ethylene oxide and 4‐glycidyloxy‐2,2,6,6‐tetramethylpiperidine‐1‐oxyl, and then the graft copolymerization of styrene was completed with benzoyl peroxide as the initiator in the presence of poly(4‐glycidyloxy‐2,2,6,6‐tetramethylpiperidine‐1‐oxyl‐co‐ethylene oxide). The polymerization of styrene was under control, and comblike, amphiphilic poly(ethylene oxide)‐g‐polystyrene was obtained. The copolymer and its intermediates were characterized with size exclusion chromatography, 1H NMR, and electron spin resonance in detail. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 3836–3842, 2006 相似文献
124.
Zhe Wang Hongzhe Ni Chengji Zhao Xianfeng Li Tiezhu Fu Hui Na 《Journal of Polymer Science.Polymer Physics》2006,44(14):1967-1978
The sulfonated poly(ether ether ketone sulfone) (SPEEKS)/heteropolyacid (HPA) composite membranes with different HPA content in SPEEKS copolymers matrix with different degree of sulfonation (DS) were investigated for high temperature proton exchange membrane fuel cells. Composite membranes were characterized by Fourier transfer infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). FTIR band shifts suggested that the sulfonic acid groups on the copolymer backbone strongly interact with HPA particles. SEM pictures showed that the HPA particles were uniformly distributed throughout the SPEEKS membranes matrix and particle sizes decreased with the increment of copolymers' DS. The holes were not found in SPEEKS‐4/HPA30 (consisting of 70% SPEEKS copolymers with DS = 0.8 and 30% HPA) composite membrane after composite membranes were treated with boiling water for 24 h. Thermal stabilities of the composite membranes were better than those of pure sulfonated copolymers membranes. Although the composite membranes possessed lower water uptake, it exhibited higher proton conductivity for SPEEKS‐4/HPA30 especially at high temperature (above 100 °C). Its proton conductivity linearly increased from 0.068 S/cm at 25 °C to 0.095 S/cm at 120 °C, which was higher than 0.06 S/cm of Nafion 117. In contrast, proton conductivity of pure SPEEKS‐4 membrane only increased from 0.062 S/cm at 25 °C to 0.078 S/cm at 80 °C. At 120 °C, proton conductivity decreased to poor 0.073 S/cm. The result indicated that composite membranes exhibited high proton conductivity at high temperature. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 1967–1978, 2006 相似文献
125.
Cheng‐Ho Chen Chih‐Chun Teng Ming‐Shyong Tsai Fu‐Su Yen 《Journal of Polymer Science.Polymer Physics》2006,44(15):2145-2154
A Haake torque rheometer equipped with an internal mixer is used to study the influence of the amount of sodium montmorillonite (Na+‐MMT) and organically modified MMT (O‐MMT) on X‐ray diffraction (XRD), morphology, and mechanical characteristics of rigid poly (vinyl chloride) (PVC)/Na+‐MMT and PVC/O‐MMT nanocomposites, respectively. Results of XRD and transmission electron microscopy (TEM) indicate that MMT is partially encapsulated and intercalated in the rigid PVC/Na+‐MMT nanocomposites. However, results of XRD and TEM show MMT is partially intercalated and exfoliated in the rigid PVC/O‐MMT nanocomposites. Tensile strength, yield strength, and elongation at break of the rigid PVC/MMT nanocomposites were improved simultaneously with adding 1–3 wt % Na+‐MMT or O‐MMT with respect to that of pristine PVC. However, the addition of Na+‐MMT or O‐MMT should be kept as not more than 3 wt % to optimize the mechanical properties and the processing stability of the rigid PVC/MMT nanocomposites. SEM micrographs of the fractured surfaces of the rigid PVC/Na+‐MMT and PVC/O‐MMT nanocomposites both before and after tensile tests were also illustrated and compared. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2145–2154, 2006 相似文献
126.
127.
This article studies positive solutions of Robin problem for semi-linear second order ordinary differential equations. Nondegeneracy and uniqueness results are proven for homogeneous differential equations. Necessary and sufficient conditions for the existence of one or two positive solutions for inhomogeneous differential equations or differential equations with concave-convex nonlinearities are obtained by making use of the nondegeneracy and uniqueness results for positive solutions of homogeneous differential equations. 相似文献
128.
Fan Fu 《Tetrahedron letters》2006,47(25):4267-4269
A chiral indium(III) complex prepared from indium triflate and a pybox ligand has been developed to give good yields and enantioselectivities (up to 92% ee) in the addition of (1-methoxy-2-methyl-propenyloxy)-trimethylsilane to various aromatic and aliphatic aldehydes via the Mukaiyama aldol reaction. 相似文献
129.
用飞秒激光(200 fs,1 kHz,800 nm)脉冲在掺杂稀土离子Ce3 的聚甲基丙烯酸甲酯(PMMA)膜中进行了光存储实验研究,包括对样品的吸收光谱、激光照射前后的电子旋转共振(Electron spin resonance,ESR)光谱的测量和讨论。结果表明掺杂稀土离子Ce3 的聚甲基丙烯酸甲酯膜具有较低的写入阈值,有利于高速、并行的三维光存储。实验结果采用传统光学显微镜并行读出。给出了四层存储结果(点间距和层间距分别是4μm和16μm),并讨论了脉冲能量的大小对空腔尺寸的影响,进行高密度存储时,在保证读出信号灰度值足够大的情况下,应选择尽量小的激光脉冲写入能量。实验结果表明这种材料可以应用于三维光信息存储。 相似文献
130.
研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效 氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2 高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负 偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生.
关键词:
高K栅介质
负偏置-温度不稳定性(NBTI)
反应-扩散(R-D)模型 相似文献