Solution-combustion synthesis of Tb-doped Y3Al5O12 nanoparticles

Nano-sized YAG:Tb powder phosphors were prepared by a solution-combustion method, using the general inorganic salts as starting materials. The X-ray diffraction (XRD) measurements showed that the precursor can be well-crystallized at 900 °C. As-prepared particles have sizes mostly in the range between 30 and 100 nm as obtained by scanning electron microscope (SEM) and transition electron microscope (TEM). Selected area electron diffraction (SAED) patterns proved that the larger particles are monocrystalline. The effects of annealing temperature and Tb-doping concentration on the luminescence intensity were studied.     

In situ functionalized self-assembled monolayer surfaces for selective chemical vapor deposition of copper

Recent studies show that the self-assembled monolayer (SAM) is well suited to control the selectivity of chemical vapor deposition (CVD). Here, we reported the selective CVD for copper on the functionalized SAM surfaces (with -SH, -SS-, and -SO₃H terminal groups). The -SS- and -SO₃H terminal group surfaces were obtained through in situ chemical transformation of -SH terminal group surface of a 3-mercaptopropyltrimethoxysilane-SAM (MPTMS-SAM). As a result, the -SS- terminal group surface reduces copper deposition and the -SO₃H terminal group surface enhances copper deposition comparing to the -SH terminal group surface. In addition, the MPTMS-SAM was irradiated by UV-light through a photo mask to prepare SH-group and OH-group regions. Then, copper films were deposited only on the SH-group region of the substrate in chemical vapor deposition. Finally, patterns of copper films were formed in the way of UV-light irradiation. These results are expected for use of selective deposition of copper metallization patterns in IC manufacturing processes.     

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

In this paper ZnO films are grown on GaAs/Al₂O₃ substrates at different temperature by metal-organic chemical vapor deposition (MOCVD). The GaAs/Al₂O₃ substrates are formed by depositing GaAs layer (∼35 nm) on the Al₂O₃ substrate. The results of X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) demonstrate that most of the Ga and As atoms form Ga-As bond and the GaAs layer does not present any orientation. The characters of the ZnO films grown on GaAs/Al₂O₃ substrates are investigated by XRD, photoluminescence (PL), atomic force microscopy (AFM) and Raman scattering. Compared with ZnO film grown on Al₂O₃ substrate, ZnO film prepared by our fabrication scheme has good crystal and optical quality. Meanwhile its grain size becomes bigger according to the AFM image. Raman analysis indicates that the intrinsic defects and the in-plane tensile stress are obviously reduced in ZnO/GaAs/Al₂O₃ samples.     

光纤分布式测温系统中基于迭代法的高准确度温度解调算法

提出了一种利用喇曼散射原理的光纤分布式测温系统中基于迭代的高准确度温度解调算法.针对于常规的反斯托克斯-斯托克斯双光路比值的温度解调算法,该迭代算法进一步校正了光纤中双光路衰减系数差对温度敏感带来的温度测量误差,尤其适用于中距离且温度场复杂的测温环境,实现了高准确度的温度测量.通过理论分析确定了该迭代法的迭代格式,测量了相应的光纤参量,并在传感样机上编写相应的代码通过实验予以验证,在0～90℃温度范围,5km测量长度输出的测温曲线符合预期的测温效果.     

Eu掺杂SiO2纳米基质的发光特性

采用溶胶-凝胶(sol-gel)法制备了Eu掺杂的SiO₂干凝胶,分别用光致发光(PL)光谱、透射电镜(TEM)、扫描电镜(SEM)、红外吸收(IR)谱等分析手段对样品进行了表征,研究了SiO₂的基质中Eu³⁺、Eu²⁺的发光特性以及退火温度对发射光谱的影响,并对其发光机理进行了分析。结果表明,样品掺杂均匀,颗粒尺寸大约在50~80 nm,硼(B)离子进入SiO₂网格,成为了基质的一部分,改变了基质的网络结构。当采用258 nm激发样品时,随着退火温度的升高,红光发射强度先增强后减弱。对于经800 ℃退火处理的样品红光发射最强,出现了576 nm(⁵D₀ →⁷F₀),620 nm(⁵D₀ →⁷F₂),658 nm(⁵D₀ →⁷F₃)3条谱线,其中主峰位于 620 nm红光发射,对应于Eu³⁺离子的⁵D₀ →⁷F₂超灵敏跃迁,进一步说明B离子参与到基质中,形成了Si—O—B键,导致Eu³⁺离子所处配位环境的对称性降低,从而有利于Eu³⁺离子的特征发射;当采用271 nm激发样品时,随着退火温度的升高,蓝光发射强度先增强后减弱,经850 ℃退火的样品400~500 nm蓝光发射最强,归属于Eu²⁺的5d→4f的跃迁发射,证明在铝离子(Al³⁺)存在的情形下,在高温退火过程中Al³⁺部分取代Si⁴⁺形成AlO^-₄基团,掺杂Eu³⁺填补AlO^-₄基团附近的空位,增加了Eu³⁺周围的AlO^-₄四面体中氧原子的电子给予能力,使得Eu³⁺还原成Eu²⁺,从而得到了较强的蓝光发射。但是,当退火温度达到900 ℃时,由于稀土离子发生位置的迁移形成团簇红光和蓝光都明显地降低。     

新大线同沟敷设热力分析

针对新大线同沟敷设管道,采用非结构化有限容积法,分析了不同的物性条件下,常温输送原油对加热输送原油的热力影响.     

Efficient continuous-wave eye-safe region signal output from intra-cavity singly resonant optical parametric oscillator

We report an efficient continuous-wave (CW) tunable intra-cavity singly resonant optical parametric oscillator based on the multi-period periodically poled lithium niobate and using a laser diode (LD) end-pumped CW 1064 nm Nd:YVO₄ laser as the pump source. A highly efficiency CW operation is realized through a careful cavity design for mode matching and thermal stability. The signal tuning range is 1401-1500 nm obtained by varying the domain period. The maximum output power of 2.2 W at 1500 nm is obtained with a 17.1 W 808 nm LD power and the corresponding conversion efficiency is 12.9%.     

Constraints from Type Ia supernovae on the Λ-CDM model in Randers-Finsler space

Gravitational field equations in Randers-Finsler space of approximate Berwald type are investigated. A modified Friedmann equation and a new luminosity distance-redshift relation is proposed. A best-fit to the Type Ia supernovae (SNe) observations yields that the Ω_Λ in the Λ-CDM model is suppressed to almost zero. This fact indicates that the astronomical observations on the Type Ia SNe can be described well without invoking any form of dark energy. The best-fit age of the universe is given. It is in agreement with the age of our galaxy.     

CMOS电路总剂量效应最劣偏置甄别

采用电路分析和解析建模方法研究了CMOS电路中甄别总剂量效应最劣辐照与测试偏置的问题。通过引入小规模模拟电路和数字电路的例子进行具体分析,获取了不同电路的最劣偏置情况。对于数字电路,引入了敏感因子的概念用于定量计算不同辐照与测试偏置组合下电路的总剂量效应敏感程度。利用实测数据或电路仿真结果对甄别结果进行了一一验证,得到相一致的结论,证明了该研究思路的正确性。     

Zig-Zag板条泵浦的2.12μm激光器

 为了实现窄脉宽、高峰值功率2.12 μm激光的稳定输出,设计了基于侧面泵浦Zig-Zag 板条产生1.06 μm基频光,进而泵浦KTP晶体通过II类相位匹配产生2.12 μm激光的光参量振荡实验。对外腔及内腔进行了实验研究,分别获得了1.53%和2.86%的电光转换效率。在20 Hz频率下内腔2.12 μm输出能量达到70 mJ以上,脉宽7 ns~9 ns。其中内腔实验中能量输出稳定度接近8%。