Paul阱内的压缩效应与量子跃迁

处理一个一维Ｐａｕｌ阱系统中的压缩现象与量子跃迁现象，对于阱内的最强压缩态和共振跃迁（一种极不稳定状态）之间的关系作了阐述，并对利用压缩性质在阱内进行精密测量的可能性作了讨论     

量子计算与超冷离子

通过介绍量子计算的基本概念和特点，并对比目前人们使用的计算机的计算方式，对于如何利用囚禁在离子阱中的超冷离子进行量子计算作了简要的叙述．     

磁拱的运动学无力场

本文首先推导了完全导电流体内运动学磁拱无力场的基本方程，接着考虑了静态解和不定常相似性解．     

Thermal Rate Constants of the N（^4S）＋O2（X^3∑g^-） → NO（X^2Ⅱ） ＋O（^3P） Reaction on the ^2A′ Potential Energy Surface

A quasiclassical trajectory study with the sixth-order explicit symplectic algorithm for the N（^4S）＋O2（X^3∑g^-） → NO（X^2Ⅱ） ＋O（^3P） reaction has been reported by employing a new ground potential energy surface. We have discussed the influence of the relative translational energy, the vibrational and rotational levels of O2 molecules on the total reaction cross section. Thermal rate constants at temperatures 300, 600, and 1000 K determined in this work for the reaction are 4.4 × 10^7, 1.8 × 10^10, and 3.1 × 10^11 cm^3mol^-1s^-1, respectively. It is found that they are in better agreement with the experimental data than previous theoretical values.     

新试剂二溴氟基偶氮氟胂分光光度法快速测定热镀锌合金中微量铈

报道了新试剂DBF-FAsA的合成及其应用于测定锌合金中添加微量元素铈量的方法。在强酸性体系中铈与二溴氟基偶氮氟砷(DBF-FAsA)形成蓝紫色配合物,其最大吸收波长为624nm,表观摩尔吸光系数ε为1.20×105L·mol-1·cm-1,线性范围为0～1.0μg/mL。该法可用于锌合金或中间锌合金材料中微量铈的测定。     

BRD96N光调制吸收增强现象的实验研究

通过光谱响应特性实验和记录／读出图像实验，研究了基因变异型细菌视紫红质（BR_D96N）分子膜对单色光的光调制特性.发现BR_D96N分子膜在550nm—600nm范围内对调制光有吸收增强的现象，且对此范围内不同波长的单色光其调制程度有差异.利用曲线拟和方法发现550nm—600nm吸收增强的变化过程分为快过程和慢过程，其对应的时间常数分别为30s和5min.利用强度调制器的吸收强度与图像灰度之间的关系，分析了560nm—600nm范围内出现图像反转的实验现象. 关键词： 细菌视紫红质D96N分子膜 光谱响应 吸收增强现象 图像反转现象     

全固态多波长飞秒脉冲激光系统

利用棱镜对引进频谱空间啁啾来补偿飞秒脉冲激光二次谐波产生中的相位失配,提高了倍频效率建立了一套全固态、多波长(1065nm, 532nm,823.1nm, 402nm)飞秒脉冲激光系统自制的Nd:YVO4激光器输出532nm绿光激光,最高平均功率可达5.6W当用2.5W绿光激光泵浦时,从自制的钛宝石激光器及经BBO倍频可分别输出中心波长为823.1nm和402nm,平均功率300mW和73mW,谱宽32.3nm和5.1nm,脉宽22fs和33.3fs、重复率108MHz的近红外和蓝光激光整个系统具有结构紧凑、倍频效率高、运行稳定的特点.     

Acoustic characterization and prediction for fan-duct-plenum-room integrations

This paper investigates mutual influence of duct and room acoustics in the whole fan-duct-plenum-room integrations. Applying the parametric design language of finite element software ANSYS (APDL), dimensional and positional influence on system acoustics has been studied. Models with different room dimensions, duct lengths, duct cross-sections, duct locations, duct discharges and duct elbow were constructed, and their characteristics were compared qualitatively. Results show that small rooms, short ducts, large duct cross-sections and bell mouth duct discharges help to increase room sound pressure levels (SPLs); SPLs in ducts and plenums are sensitive to duct dimensions and duct discharge types but insensitive to duct locations and room dimensions; duct elbows have relatively indistinct acoustic influence in each component. Based on the calculation results, a semi-experimental method was proposed for simply and approximately evaluating indoor acoustic spectra of fan-duct-plenum-room integrations, then an example was used to demonstrate the prediction process. Finally, by adopting several ideal models, sound field constitutions, duct and room wall admittances and duct end reflection were explored quantitatively. This study may give a detailed understanding of fan-duct-plenum-room acoustics for researchers, also it might provide a new, simple and approximate prediction method for professionals to evaluate and improve fan-ducted acoustics.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

有界连通区域上Dirichlet空间及其算子

本文主要讨论了有界连通区域Dirichlet空间上Toeplitz算子的Fredholm性质,计算了符号在C1中的Toeplitz算子的本性谱和Fredholm指标．