Fabrication and Characterization of Mn0.5Zn0.5Fe2O4 Magnetic Nanofibers

Mn0.5Zn0.5Fe2O4 Magnetic nanofibers were fabricated by calcining electrospun polymer/inorganic composite nanofibers and characterized by thermogravimetric and differential thermal analysis, x-ray diffraction, field emission scanning electron microscopy, high resolution transmission electron microscopy and a vibrating sample magnetometer. The experimental results show that the pure spinel structure is basically formed when the composite nanofibers are calcined at 450°C for 2h. With the increasing calcination temperature, both the saturation magnetization and coercivity of nanofiber samples increase initially along with the growth of Mn0.5Zn0.5Fe2O4 nanocrystals contained in the nanofibers. However, when the calcination temperature reaches 550°C, the saturation magnetization of nanofibers starts to dramatically decrease owing to the formation of the α-Fe2O3 phase at this temperature. The prepared Mn0.5Zn0.5Fe2O4 nanofibers calcined at 500°C for 2h have diameters ranging from 100 to 200nm. Their saturation magnetization and coercivity are 12.37emu/g and 4.81kA/m at room temperature, respectively.     

Multi-Party Quantum Key Agreement Protocol with Bell States and Single Particles

International Journal of Theoretical Physics - Liu et al. [Quantum Inf. Process. 12, 1797–1805 (2013)] proposed a multi-party quantum key agreement (QKA) protocol based on single particles....     

Effects of V/III ratio on the growth of a-plane GaN films

The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal-organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits are formed at a relatively high V/III ratio, while a relatively low V/III ratio can enhance the lateral growth rate along the c-axis direction. The higher V/III ratio leads to a high density of pits in comparison with the lower V/III ratio. The surface morphology is improved greatly by using a low V/III ratio of 500 and the roughness mean square of the surface is only 3.9 nm. The high resolution X-ray diffraction characterized crystal structural results show that the rocking curve full width at half maximum along the m axis decreases from 0.757° to 0.720°, while along the c axis increases from 0.220° to 0.251° with the V/III increasing from 500 μmol/min to 2000 μmol/min, which indicates that a relatively low V/III ratio is conducible to the c-axis growth of a-plane GaN.     

氢化物气相外延生长高质量GaN膜生长参数优化研究

系统研究了低温成核层生长时间、高温生长时的V/Ⅲ 比以及生长温度对氢化物气相外延生长GaN膜晶体质量的影响. 研究发现合适的低温成核层为后续高温生长提供成核中心, 并能有效降低外延膜与衬底间的界面自由能, 促进成核岛的横向生长; 优化的V/Ⅲ比和最佳生长温度有利于降低晶体缺陷密度, 促进横向生长, 增强外延膜的二维生长. 利用扫描电子显微镜、原子力显微镜、高分辨X射线衍射、 低温光致发光谱和室温拉曼光谱对优化条件下生长的GaN外延膜进行了结构和光电特性表征. 测试结果表明, 膜表面平整光滑, 呈现二维生长模式表面形貌; (002)和(102)面摇摆曲线半高宽分别为317和343 arcsec; 低温光致发光谱中近带边发射峰为3.478 eV附近的中性施主束缚激子发射峰, 存在11 meV的蓝移, 半高宽为10 meV, 并且黄带发光强度很弱;常温拉曼光谱中E₂ (high) 峰发生1.1 cm^-1蓝移.结果表明, 优化条件下生长的GaN外延膜具有良好的晶体质量和光电特性, 但GaN 膜中存在压应力. 关键词： 氮化镓 氢化物气相外延 低温成核层     

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition （MOCVD）. Microstructural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1 （LO） of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors.     

Superhydrophobic Surfaces Produced by Carbon Nanotube Modified Polystyrene Composite Coating

The present work investigates the enhancement of water repellency on engineering materials surfaces using nanoscale roughness inherent in multi-walled carbon nanotubes (MWCNTs) together with a hydrophobic polystyrene coating via a simple spraying-based technique. The coatings show both a high contact angle and a small sliding angle for water droplets. The different surfaces obtained exhibit contact angles from 125° up to 153° depending on the preparation conditions. The observations of the topology by scanning electron microscopy reveal that the nanostructure created by the MWCNTs and the microstructure induced by the deposition of polystyrene particles forming a two-level structure that conceptually mimics the lotus leaf surface are necessary to create stable superhydrophobic surfaces.     

Fermion Condensates in Lower Dimensional Gauge Theories

Combining a unitary transformation,the variational method and the exact ground state of pure gauge Hamiltonian.we investigate syst matically the vacumm structure and spintaneous chiral-symmetry breaking in (1+1) and (2+1) dimensional Hamiltonian lattice gauge theories with fermions,and obtain nice scaling behaviors for 〈ψψ〉 extending to the weak coupling regime.This paper not only reproduces well the exact value in the continuum Schwinger model,but also predicts the values for the fermion condensates in QCD₂,QED₃ and QCD₃.     

New Methods for Computer Simulations of the Scalar Models with Dynamical Fermions

The fermion-gauge-scalar models exhibit interesting chiral phase structure. To study the properties of the critical phenomena on computer, we further develop some new efficient numerical methods applicable to the chiral limit where the conventional algorithms cannot reach.     

AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究

首先把本征值方程投影到导带的子空间中, 进而得到AlGaN/GaN量子阱中第一、二子带的Rashba自旋劈裂系数(α ₁, α ₂)和子带间自旋-轨道耦合系数η₁₂. 然后自恰求解薛定谔方程和泊松方程计算了不同栅压的量子阱中的α ₁, α ₂和η₁₂, 并分别讨论了量子阱阱层、左右异质结界面和垒层对它们的贡献. 结果表明可以通过栅压来调节自旋-轨道耦合系数, 子带间自旋轨道耦合系数η₁₂比Rashba自旋劈裂系数α ₁, α ₂小, 但基本在同一数量级.     

Lattice calculation of the vector mass in the Schwinger model

Using the variational method, we calculate the mass of the vector meson in the Hamiltonian lattice Schwinger model. Our results are consistent with the exact value in the continuum.