关于有消失矩的函数的Hilbert变换的加权范数不等式

为刻划一类权函数W,使具有N阶消失矩的函数f的Hilbert变换f满足带权L~P强型不等式Adams给出了一个充要条件。利用A_P权的性质,本文进一步完善了这个结果。     

Responses of Issatchenkia terricola WJL-G4 upon Citric Acid Stress

This study aimed to elucidate the responses of a novel characterized Issatchenkia terricola WJL-G4 against citric acid stress by performing physiological analysis, morphology observation, and structural and membrane fatty acid composition analysis. The results showed that under citric acid stress, the cell vitality of I. terricola WJL-G4 was reduced. The cell morphology changed with the unclear, uncompleted and thinner cell wall, and degraded the cell structure. When the citric acid concentration was 20 g/L, I. terricola WJL-G4 could tolerate citric acid and maintain the cell structure by increasing the intracellular pH, superoxide dismutase activity, and contents of unsaturated fatty acids. As the citric acid concentration was ≥80 g/L, the stress has exceeded the cellular anti-stress ability, causing substantial cell damage. The cell membrane permeability, the content of membrane lipids, malondialdehyde and superoxide anion increased, but the intracellular pH and superoxide dismutase activities decreased, accompanying the increase of citric acid concentrations. The findings of this work provided a theoretical basis for the responsive mechanism of I. terricola WJL-G4 under high concentrations of citric acid, and can serve as a reference for biological acid reduction in fruit processing.     

绝缘衬底上硅表面载流子的超快动力学研究

利用800 nm波长的飞秒抽运探测技术测量r具有不同单晶硅薄膜厚度的绝缘衬底上硅(SOI)皮秒瞬态反射率变化,并通过基于受激载流子密度和温度变化过程建立的反射率模型讨论了SOI表面载流子的超快动力学过程.研究表明,表面复合速度(SRV)是影响载流子动力学响应的主要因素,且薄膜厚度越小表面复合速度就越大,对应的表面态密度可达到1013cm-2 .对于较小的SRV,受激载流子的超快响应决定了瞬念反射率变化;而对于较大的SRV,晶格温升对瞬态反射率变化的贞献变得显著,使得反射率在更短的时间内恢复并超过初始值.     

Synthesis, Structure and H+/K+-ATPase Inhibitory Activity of Novel Triazolyl Substituted Tetrahydrobenzofuran Derivatives via One-pot Three-component Click Reaction

Eleven triazolyl substituted tetrahydrobenzofuran derivatives were synthesized in high yields as novel H⁺/K⁺‐ATPase inhibitor via one‐pot CuI‐catalyzed three‐component click reaction of azide, secondary amine and 3‐bromopropyne under mild conditions in water. Their structures were characterized by NMR, IR, ESI‐MS, elemental analysis and single‐crystal X‐ray diffraction analysis. Most of the target compounds exhibited better H⁺/K⁺‐ATPase inhibitory activity than commercial omeprazole with IC₅₀ values less than 15 µmol·L^?1. The initial structure‐activity analysis suggested that the triazole substituted by cycloalkyl, aromatic ring or O‐containing side‐chain seemed to be beneficial for enhancing the activity.     

Development of Sn2+-based oxyfluoride photocatalyst with visible light response of ca.650 nm via strengthened hybridization of Sn 5s and 02p orbitals

The hybridization between the outmost s orbitals of metal (Bi3+,Sn2+,Pb2+,Ag+) and O 2p orbitals has been widely employed to develop innovative semiconductors w...     

利用不完全自锁模激光研究C60的反饱和吸收效应

本文报道首次采用色心晶体的不完全自锁模激光（１０６４ｎｍ）对Ｃ６０分子反饱和吸收效应的研究，实验结果与采用平均过程的研究方法是一致的，文中还讨论了Ｃ６０分子反饱和吸收效应产生的原因。     

表面效应对γ-Fe2O3微粉饱和磁化强度的影响

我们制备了直径为80—700A的γ-Fe₂O₃微粉,测量了它的比饱和磁化强度σ_s和比表面积S_a,得出经验公式:σ_s(s=σ_s(∞)(1—aS_a)。假定微粉由两部分组成:第一部分是表面层,在磁场的作用下,它的磁矩只能转到与磁场成某个角度;第二部分是内部,它的磁矩可以转到磁场的方向。从这个简单的模型出发,上述的经验公式可以得到较好的解释。 关键词：     

有机层界面对双层有机发光二极管复合效率的影响

建立了双层有机发光二极管中载流子在有机层界面复合的无序跳跃理论模型.由于有机分子材料的空间及能带结构的无序性，采用刚体模型处理有机层界面问题是不恰当的，而采用无序跳跃模型比较合理.复合效率及复合电流由载流子跳跃距离、有机层界面的有效势垒高度及该界面处的电场强度分布所决定：在双层器件ITO/α-NPD/Alq₃/Al中，当所加电压小于19.5V时，复合效率随着载流子跳跃距离的增加而增加，而大于19.5V时，复合效率随着其距离的增加而减少；复合效率随着有机层界面有效势垒高度的增加而增加； 关键词： 有机层界面 双层有机发光二极管 复合效率 有效势垒高度 无序跳跃模型