SiO2保护膜对高反膜激光损伤特性的改善

 为了研究高功率系统中高反膜的损伤机制,对高功率系统中最常用的基频高反膜进行了损伤实验。利用台阶仪、扫描电镜、表面轮廓仪等手段,对实验样品的典型损伤形貌进行了比较和分析。结果表明：保护膜的存在增强了样品的抗激光损伤能力;未加保护膜样品的典型破坏形貌是由材料热物特性差异导致的分层剥落损伤,这类损伤在后续的脉冲辐照下会迅速发展;有保护膜样品的典型破坏形貌是中心带有μm量级小坑的等离子体烧蚀损伤区,其主要是由缺陷受热力作用喷溅导致,小坑附近膜面的凸起是这种力学作用的宏观体现,这类损伤在后续的脉冲辐照中表现得相对比较稳定。保护膜的存在,在一定程度上抑制了分层剥落这种灾难性损伤的出现,改善了样品的损伤特性。     

HfO_2单层膜的吸收和激光损伤阈值测试

薄膜吸收是降低膜层激光损伤阈值的重要原因,为了研究薄膜吸收对激光损伤阈值的影响,对HfO2单层膜在1 064 nm处的吸收及其在不同波长激光辐照下的损伤阈值进行了测试和分析。研究结果表明:薄膜的激光损伤阈值由薄膜吸收平均值(决定于薄膜中缺陷的种类和数量)和吸收均匀性(决定于薄膜中缺陷的分布)共同决定;根据HfO2单层膜在1064 nm波长处的吸收值,不但可以定性判断薄膜在1 064 nm波长,而且还可以判断在其它波长激光辐照下的抗激光损伤能力。     

级联电磁带隙结构对双频微带天线互耦的影响

一种均匀面片尺寸的图钉型电磁带隙结构只能实现一个表面波带隙,而将不同参数的图钉型电磁带隙结构级联可以实现多个或宽带的表面波带隙。利用不同金属面片尺寸的图钉型电磁带隙结构级联的方法实现双带的表面波带隙。设计两种均匀的电磁带隙结构,使其带隙范围分别覆盖天线的两个工作频带,然后将这两种结构级联起来,加载于两个缝隙天线单元之间。仿真分析和实验结果表明,级联型的电磁带隙结构可以有效抑制表面波,在两个频率带内同时减小互耦。     

微波消解ICP-MS测定鲜竹笋中7种微量元素

建立同时检测鲜竹笋中铬、铜、锌、砷、镉、汞、铅等7种元素的分析方法。竹笋样品在硝酸介质中经微波消解,用电感耦合等离子体质谱(ICP-MS)检测,全定量法采集数据。校准曲线线性良好,相关系数在0.9937—1.0000之间;检出限为0.005—0.202μg/L;加标回收率在88.96%—110.5%;精密度RSD小于6.09%;国家标准样品西红柿叶(GSBZ51001-94)中几种元素的测定值都在标准范围内。该方法具有灵敏、可靠、快速、准确等优点,适用于竹笋中微量元素的分析测定。     

Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of （100） reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.     

Preparation and characterization of Ag nanoparticle-embedded polymer electrospun nanofibers

Poly (vinyl alcohol) (PVA) and poly (vinyl pyrrolidone) (PVP) nanofibers embedding Ag nanoparticles (5–18 nm) have been prepared successfully by electrospinning at room temperature. Scanning electron microscope (SEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), Fourier transform IR spectra (FTIR), and Raman scattering were used to characterize the structure and properties of Ag nanoparticle-embedded PVA and PVP nanofibers before and after heat treatment at different temperature. The antibacterial activity of Ag nanoparticle-embedded PVP nanofibers after heat treatment was also tested, which indicated that the biological activity of yeast cells was effectively inhibited by these Ag nanoparticle-embedded PVP nanofibers.     

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

<正>We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator(SOI) dual-coupled micro-ring embedded with p-i-n diodes.A crosstalk of -23 dB is obtained in the 20-μm-radius micro-ring with the well-designing asymmetric dual-coupling structure.By optimizations of the doping profiles and the fabrication processes,the sub-nanosecond switch-on/off time of400 ps is finally realized under an electrical pre-emphasized driving signal.This compact and fast-response micro-ring switch,which can be fabricated by complementary metal oxide semiconductor(CMOS) compatible technologies,have enormous potential in optical interconnects of multicore networks-on-chip.     

Bichromatic laser frequency stabilization with Doppler effect and polarization spectroscopy

The interaction between polychromatic fields and atoms is an important subject in quantum optics.Frequency locking for small frequency interval multi-field is usually required in some experiments.In this letter,we experimentally demonstrate a holistic scheme for bichromatic laser frequency stabilization.Compared with traditional saturation absorption methods and complicated frequency shift schemes,offset locking for bichromatic fields is simply achieved using polarization spectroscopy and Doppler effect.Frequency locking with a wide-range asymmetry of the detuning is also shown.Our scheme makes laser spectroscopy experiments with polychromatic fields more convenient.     

Eu掺杂TbMnO3多晶材料的介电性质

采用固相反应法制备了Tb_0.8Eu_0.2MnO₃多晶材料.对样品的X射线衍射（XRD）分析表明Eu³⁺固溶于TbMnO₃中.测量了样品在低温(100 K ≤T≤ 300 K)和低频下(200 Hz≤f≤100 kHz)的复介电性质.在此温度区间内发现了两个介电弛豫峰.经分析认为低温峰（T≈170 K）起源于局域载流子漂移引起的偶极子极化效应,而高温峰（T≈290 K）则是由离子电导产生的边界和界面层的电容效应引起的.电阻率的测量显示在低温下（T≈230 K）存在明显的导电机制转变.     

Construction of stable equivalences of Morita type for finite-dimensional algebras I

In the representation theory of finite groups, the stable equivalence of Morita type plays an important role. For general finite-dimensional algebras, this notion is still of particular interest. However, except for the class of self-injective algebras, one does not know much on the existence of such equivalences between two finite-dimensional algebras; in fact, even a non-trivial example is not known. In this paper, we provide two methods to produce new stable equivalences of Morita type from given ones. The main results are Corollary 1.2 and Theorem 1.3. Here the algebras considered are not necessarily self-injective. As a consequence of our constructions, we give an example of a stable equivalence of Morita type between two algebras of global dimension , such that one of them is quasi-hereditary and the other is not. This shows that stable equivalences of Morita type do not preserve the quasi-heredity of algebras. As another by-product, we construct a Morita equivalence inside each given stable equivalence of Morita type between algebras and . This leads not only to a general formulation of a result by Linckelmann (1996), but also to a nice correspondence of some torsion pairs in -mod with those in -mod if both and are symmetric algebras. Moreover, under the assumption of symmetric algebras we can get a new stable equivalence of Morita type. Finally, we point out that stable equivalences of Morita type are preserved under separable extensions of ground fields.