基于分形理论的NDVI连续空间尺度转换模型研究

尺度效应是遥感领域的一个非常重要的科学问题。定量遥感尺度转换研究可用于解决如定量遥感反演产品真实性检验等诸多颇具挑战性的问题。传统升尺度转换研究方法无法得到连续空间尺度上反演量的变化特性;且面临不同传感器间几何、光谱等特性参数校正问题的干扰,尺度转换研究精度受到影响。为此,基于分形理论利用单一传感器影像解决这些问题。基于Enhanced Thematic Mapper Plus(ETM+)数据,以NDVI(利用其地表辐亮度计算模型)为研究对象,建立了一个可参考的反演量连续空间尺度转换模型研究流程。结果表明:(1)NDVI升尺度转换中存在尺度效应,且此效应可由尺度转换分形模型定量描述;(2)此分形模型适用于NDVI产品的真实性检验中。这表明分形作为一种有效的方法,可用于定量遥感尺度转换研究中。     

周期参数扰动的T混沌系统同宿轨道分析

针对一类周期参数扰动的T混沌系统, 通过变换将系统转化为具有广义Hamilton结构的周期参数扰动的慢变系统, 运用Melnikov方法对系统的同宿轨道进行了分析计算, 并给出了系统的同宿轨道参数分支条件. 同时, 通过数值实验, 对周期参数扰动控制策略及同宿轨道进行了仿真, 验证了文中理论分析的正确性. 关键词： Hamilton系统 Melnikov方法 同宿轨道 周期参数扰动     

Effect of ion impinging on the microstructure and field emission of carbon nanotubes

Effects of ion impinging on the microstructure and field electron emission properties of screen-printed carbon nanotube films were investigated. We observed that the plasma treatment modified the microstructure of CNTs along with the remarkable increase of emission site density. With the prolongation of ion impinging time, the emission current falls down first, and then rises up to higher than that of the untreated films. It is proposed that the change of emission characteristics is due to the different emission mechanisms. After the treatment, electrons are emitted predominantly from the nano-nodes on the tube wall instead from the nanotube tips.     

Consistency proof of two denoising methods and the parameter selection of PDE filtering method for ESPI

Electronic speckle pattern interferometry （ESPI） is a nondestructive, whole-field optical measurement technique. The removal of speckle noise is fundamental to extract measurement information accurately. In this letter, two filtering methods based on the oriented feature of ESPI fringes, i.e., the second-order oriented partial differential equation （SOOPDE） and oriented, regularized quadratic-cost function filtering methods, are first proven to be consistent. An important question in solving partial differential equation, i.e., how to select suitable parameters in an adaptive manner, is then discussed. The computer-simulated and experimentally obtained ESPI fringe patterns and phase map are processed by the SOOPDE filtering model with adaptive selective parameters. The qualitative and quantitative analyses demonstrate that the parameters selected by the adaptive method are effective and suitable for the SOOPDE filtering model.     

功能层厚度对叠层有机电致发光器件出光性能影响的数值研究

功能层厚度是影响有机电致发光器件出光效率的主要因素之一,故获得不同功能层厚度对器件出光特性的影响规律是制备高性能器件的重要基础. 本文基于薄膜光学原理、电偶极子辐射理论及Fabry-Pérot微腔原理,建立了结构为glass/ITO/N,N0-bis（naphthalen-1-yl）-N,N0-bis（phenyl）-benzidine（NPB）/tris（8-hydroxyquinoline）aluminum（Alq₃）/molybdenum trioxide（MoO₃）/NPB/Alq₃/Al的叠层有机电致发光器件的光学模型,系统地研究了各个功能层厚度对叠层有机电致发光器件出光强度的影响,得到了功能层厚度对器件出光强度影响的规律. 该模型的建立与所获得的结果可对深入了解叠层有机电致发光器件的工作机理以及制备高性能的器件提供一定的帮助. 关键词： 叠层有机发光器件 出光特性 厚度 数值研究     

荧光染料掺杂的高效率、高亮度白色有机电致发光器件

制备了结构为 ITO/NPB（30 nm）/Rubrene（0.2 nm）/CBP：Bczvbi（8 nm,x%）/Bphen（30 nm）/Cs₂CO₃：Ag₂O（2 nm,20%）/Al（100 nm）的器件。研究了Bczvbi掺杂浓度（x=5,10,15）对白光器件性能的影响。综合利用发光层中主客体之间的能量转移和空穴阻挡层的空穴阻挡特性,得到了高效率、高亮度的白色有机电致发光器件。当Bczvbi的掺杂质量分数为10%时,器件的效率和亮度都为最大。驱动电压为7 V时,最大电流效率为4.61 cd/A;驱动电压为9 V时,最大亮度为21 240 cd/m²。当驱动电压从4 V增加到9 V时,色坐标从（0.36,0.38）变化为（0.27,0.29）,均处于白光区域。     

Spin-polarized zero-energy states in BN/C core–shell quantum dots

Boron-nitride (BN) domains in graphene or graphene domains in BN monolayer offer additional freedoms for tuning the electronic properties of these BN/C nanostructures, which is quite crucial for the applications in nanoscale devices. Based on first-principles calculations combined with a simple Hubbard model, we show that the electron zero-energy states (ZESs) of BN/graphene core–shell quantum dots (QDs) in triangular shapes can be well tuned by varying the size and topology of each domain. The net spin of the systems is dominated by the graphene segment which can be described by a Lieb?s theorem. We also demonstrated that a π-electron Hubbard model within a mean-field approximation is implementable in dealing with the electron spin-polarization of BN/C hetero-structured graphene-like materials. This provides an efficient theoretical approach for the BN/C systems where electron spin-polarization is involved.     

Theoretical analysis of the performance of a single side band multicarrier source based on a re-circulating frequency shifter influenced by an optical bandpass filter

An optical bandpass filter （OBF） is an important element whose properties considerably influence the output performance of a single side band multicarrier source based on a re-circulating frequency shifter. The influence of the OBF in the loop on the output spectrum is theoretically analyzed. Numerical simulations and experiments are Mso carried out. Results show that the steepness and deepness of a nonflat-top filter influence the stability of the spectrum of an output multicarrier. To obtain multicarrier output with tone to noise ratio （TNR） 〉26 dB and error vector magnitude （EVM） 〈0.25, the steepness ratio of the filter should be greater than 0.75 and deepness should be larger than 0.99.     

Effect of magnetic field on the TC and magnetic properties for the aligned MnBi compound

In the compound MnBi, a first-order transition from the paramagnetic to the ferromagnetic state can be triggered by an applied magnetic field and the Curie temperature increases nearly linearly with an increase in magnetic field by ∼2 K/T. Under a field of 10 T, T_C increases by 20 and 22 K during heating and cooling, respectively. Under certain conditions a reversible magnetic field or temperature induced transition between the paramagnetic and ferromagnetic states can occur. A magnetic and crystallographic H-T phase diagram for MnBi is given. Magnetic properties of MnBi compound aligned in a Bi matrix have been investigated. In the low temperature phase MnBi, a spin-reorientation takes place during which the magnetic moments rotate from being parallel to the c-axis towards the basal plane at ∼90 K. A measuring Dc magnetic field applied parallel to the c-axis of MnBi suppresses partly the spin-reorientation transition. Interestingly, the fabricated magnetic field increases the temperature of spin-reorientation transition T_s and the change in magnetization for MnBi. For the sample solidified under 0.5 T, the change in magnetization is ∼70% and T_s is ∼91 K.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).