Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.     

Lattice Boltzmann Simulation for the Optimized Surface Pattern in a Micro-Channel

Based on the Bhatangar-Gross-Krook （BGK） models, numerical simulation using the lattice Boltzmann model is performed to investigate the optimized surface pattern in a micro-channel. In order to simulate the practical situation correctly, a slip/no-slip boundary condition is applied with making several assumptions. To assess the validity and efficiency of the model, one benchmark problem with considering the surface patterns is studied. Numerical results show the value of rms velocity Vrms increases with the increasing ratio β and larger Reynolds number Re, higher fluctuation of the rms oscillating velocity. Furthermore, the results show that a good mixing effect can be obtained when Re is large enough and the ratio β is about 1.618,which is the appropriate choice, i.e. the well known golden section phenomenon.     

Further Acceleration of MeV Electrons by a Relativistic Laser Pulse

With the development of photocathode rf electron gun, electrons with high-brightness and mono-energy can be obtained easily. By numerically solving the relativistic equations of motion of an electron generated from this facility in laser fields modelled by a circular polarized Gaussian laser pulse, we find the electron can obtain high energy gain from the laser pulse. The corresponding acceleration distance for this electron driven by the ascending part of the laser pulse is much longer than the Rayleigh length, and the light amplitude experienced on the electron is very weak when the laser pulse overtakes the electron. The electron is accelerated effectively and the deceleration can be neglected. For intensities around 10¹⁹ W•μm²/cm², an electron's energy gain near 0.1 GeV can be realized when its initial energy is 4.5 MeV, and the final velocity of the energetic electron is parallel with the propagation axis. The energy gain can be up to 1 GeV if the intensity is about 10²¹ W•μm²/cm². The final energy gain of the electron as a function of its initial conditions and the parameters of the laser beam has also been discussed.     

一氧化硅电致激发光谱理论研究

采用含时密度泛函(Time-dependent density functional theory)TDDFT/6-311++g(d,p)方法研究了一氧化硅分子能量最低的10个单重激发态的激发波长和跃迁振子强度等激发光谱参数.同时利用原子与分子物理相关理论分析了外电场对一氧化硅分子激发光谱的影响规律.得到的结论是,随外电场强度增强,一氧化硅分子激发态跃迁光谱向可见光区域发生红移.该结果为通过外电场调制材料发光特性提供了理论支持.     

空气开关等离子体干涉条纹图像的处理

利用Mach-Zehnder干涉仪测量了空气开关中等离子体电子密度分布,使用高速分幅相机拍摄记录不同时延下的干涉条纹图像。针对实验获得的干涉条纹图像的特点,提出了一种首先进行频域FFT滤波去噪,然后进行空域二值化、细化的处理方法。该方法能够很好的消除图像噪声的影响,提取出单像素的亮条纹中心线,从而能够准确读取条纹坐标信息,再通过对干涉条纹偏移量进行Abel逆变换,得到等离子体电子密度分布。     

基于邻菲咯啉的反应型三元铕配合物的合成与荧光性质

以二苯甲酰甲烷(HDBM)为第一配体,5-丙烯酰胺基-1,10-菲咯啉(Aphen)为活性第二配体,制备了新的反应型三元铕配合物Eu(DBM)₃Aphen。通过元素分析、红外光谱和热分析对配合物进行了组成确定,采用紫外光谱、荧光光谱、荧光寿命和荧光量子产量研究了配合物的光物理性能。结果表明,在紫外光激发下,配合物Eu(DBM)₃Aphen能发射Eu3+的特征荧光,其荧光发射强度、单色性、荧光寿命和荧光量子产率等均显著高于文献报道的丙烯酸配合物Eu(DBM)₂AA的相应数值,表明配合物Eu(DBM)₃Aphen不仅可作为潜在的红色发光材料,还可作为反应型的配合物,为制备具有优异发光性能的稀土聚合物提供了一条新的途径。     

激光点阵扫描法绝对定标太阳辐射计直射通道研究

利用可调谐激光器作为光源,以溯源于低温绝对辐射计的标准传递探测器作为激光束功率测量探测器,采用激光点阵扫描方法在太阳辐射计有效孔径光阑面形成均匀照度场,精确测量太阳辐射计870 nm无偏直射通道中心波长处绝对辐照度响应度。利用灯-单色仪系统扫描获得该通道相对光谱辐照度响应度,最终在实验室条件下获得该通道绝对光谱辐照度响应度,联合大气层外太阳照度谱数据通道内积分得到该通道大气层外响应常数V₀值,与NASA的GSFC中心的2009年定标结果差异仅为3.75%,定标不确定度达到2.06%,验证了这一新技术的原理可行性。     

紫色土土壤全氮和全磷含量的高光谱遥感预测

高光谱遥感技术是土壤养分预测的有效手段之一。以三峡库区王家沟小流域为研究区,在对土壤样本的理化性质和实验室反射光谱数据分析和测量的基础上,用偏最小二乘回归方法建立了紫色土土壤全氮和全磷含量的预测模型,并用33个水稻土土壤样本对紫色土土壤养分预测模型进行了验证。结果显示,紫色土土壤全氮预测模型得到的土壤样本预测值和实测值之间的总相关系数达到了0.672,而紫色土土壤全磷预测模型得到的相关系数只有0.498; 用紫色土土壤养分预测模型对水稻土土壤养分进行预测得到的相关系数分别为0.550和0.124。因此,用高光谱来预测紫色土土壤全氮含量具有一定的可行性,但高光谱对于紫色土全磷含量的预测效果相对较差;土壤养分预测模型在不同类型土壤之间并不具有很好的通用性。     

大气等离子体加工过程的原子发射光谱研究

大气等离子体加工反应过程中,等离子体发生装置的热稳定过程对去除率有直接影响,CF₄是化学反应中活性F*原子的提供者,O₂是重要的辅助气体。为了寻找这三者对大气等离子体加工反应过程的影响规律,采用大气等离子体加工系统进行加工、光谱仪监控等离子体反应过程的活性F*原子的光谱变化。实验结果表明,在大气压等离子体加工系统中: 热稳定后,活性F*原子强度基本不随时间变化;随着CF₄含量的增加,F*原子谱线轮廓发生了自吸收现象,这说明采用光谱法研究CF₄含量对活性F*原子含量的影响是不完全准确的;由于O₂易和CF₄解离的中间产物反应,抑制活性粒子重新组合,因此一定范围内随着O₂含量增加,活性F*原子增加。     

铁基铁磁超导体

超导电性与铁磁长程序是两个"敌对"的物质状态。长期以来,探索超导与铁磁共存是十分耐人寻味的课题。文章在回顾半个多世纪以来该课题主要进展的基础上,重点介绍了作者近年来对新型铁基铁磁超导体的发现和发展,最后对这类新材料的进一步研究进行了展望。