Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Advances in micro-perforated panel absorbers

Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.     

Clifford分析中无界域上正则函数的边值问题

在引入修正Cauchy核的基础上,讨论了无界域上正则函数的带共轭值的边值问题：a(t)Φ (t) b(t)Φ (t) c(t)Φ-(t) d(t)Φ=g(t)．首先给出了无界域上正则函数的Plemelj公式,然后利用积分方程方法和压缩不动点原理证明了问题解的存在唯一性．     

基元阀在汽轮机进汽阀研究中的应用

阀碟型线对汽轮机进汽阀的性能影响很大，本文设计了三种形式的基元阀，通过数值模拟手段研究了阀碟型线对流场的影响；得出了不同阀碟形式的性能．     

Solitary waves and their bifurcations of KdV like equation with higher order nonlinearity

We investigate the KdV like equation with higher order nonlinearity ut + a(1 +bun)unux + uxxx = 0with n ≥ 1, a, b ∈ R and α≠ 0. The bifurcations and explicit expressions of solitary wave solutions for theequation are discussed by using the bifurcation method and qualitative theory of dynamical systems. Thebifurcation diagrams, existence and number of the solitary waves are given.     

利用振幅调制器进行光电负反馈抑制激光强度噪声

采用振幅调制器作为抑制激光强度噪声的元件，首先对光电负反馈回路进行了简要的理论分析，然后利用该光电负反馈进行抑制激光二极管抽运全固化单频环形Nd:YVO4红外激光器强度噪声的实验。结果表明，在0－1MHz的低频段，强度噪声大幅度降低，最大降低约15dB。     

激光产生的铝、硅、氧、铜、硒等离子体X光谱

利用长晶格的OHM晶体谱仪,从激光等离子体中获得丰富的铜、硒类氖、类氟、类钠离子的二、三、四级软X射线衍射光谱和铝、氧、硅的类氢、类氦、类锂离子一到四级谱,波长在14～40(?)之间,在此基础上,本文较为细仔地分析了各光谱结构.     

单甲基原位改性SiO2疏水减反膜的制备与性能研究

 在碱性条件下通过TEOS和MTES的共水解缩聚反应制备了单甲基原位改性的SiO₂溶胶，并使用提拉法在K9玻璃基片上镀制了疏水减反膜。通过透射电镜（TEM）考察了镀膜溶胶的微结构，分别使用红外光谱（FTIR）分析了薄膜的组分，用原子力显微镜（AFM）观察了薄膜的表面形貌和起伏状况，用紫外可见光谱（UV-vis）考察了薄膜的减反射性能，用接触角仪测量了薄膜对水的接触角。并使用“R-on-1”的方式测量了薄膜在Nd:YAG激光（1 064 nm，1 ns）作用下的损伤阈值。结果表明，通过共水解缩聚反应可以把甲基引入镀膜溶胶簇团中，改善了溶胶簇团的网络结构，使薄膜得到相当好的疏水性能和更好的抗激光损伤性能，同时薄膜能保持较好的减反射性能。     

关于圈的完全正矩阵实现

本文给出了一个关联图为圈的非负、半正定矩阵A为完全正的一个充要条件.我们还证明了这样的矩阵A（当A为完全正时）的分解指数即为A的阶数.     

1+1/2对转涡轮叶排轴向间距对性能影响的研究

木文对1+1/2对转涡轮中轴向间距影响进行了初步研究。对不同轴向间距叶栅流场进行了大量时间精确模拟。研究表明,1+1/2对转涡轮高低压转叶间轴向间距成为追求高效率的制约因素,轴向间距为高压转叶喉部宽度是关键点。因此有关小轴向间距下强激波/叶排干扰的研究应该加强。