Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

a-C:F薄膜的热稳定性与光学带隙的关联

以CF4和C6H6的混合气体作为气源,在微波电子回旋共振化学气相沉积(ECRCVD)装置中制备了氟化非晶碳薄膜(aC:F),并在N2气氛中作了退火处理以考察其热稳定性.通过傅里叶变换红外吸收谱和紫外可见光谱获得了薄膜中CC双键的相对含量和光学带隙,发现膜中CC键含量与光学带隙之间存在着密切的关联,在高微波功率下沉积的氟化非晶碳膜具有低的光学带隙和较好的热稳定性. 关键词： 氟化非晶碳膜 光学带隙 退火温度 热稳定性     

ON THE UNIQUENESS OF THE WEAK SOLUTIONS OF A QUASILINEAR HYPERBOLIC SYSTEM WITH A SINGULAR SOURCE TERM

This paper is a continuation of the authors'previous paper[1].In this paper the authorsprove,assuming additional conditions on the initial data,some results about the existence anduniqueness of the entropy weak solutions of the Cauchy problem for the singular hyperbolicsystem a_t+(au)_x_2au/x=0,u_t+1/2(a~2+u~2)_x=0,x>0,t≥0.     

关于圈的完全正矩阵实现

本文给出了一个关联图为圈的非负、半正定矩阵A为完全正的一个充要条件.我们还证明了这样的矩阵A（当A为完全正时）的分解指数即为A的阶数.     

Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

1+1/2对转涡轮叶排轴向间距对性能影响的研究

木文对1+1/2对转涡轮中轴向间距影响进行了初步研究。对不同轴向间距叶栅流场进行了大量时间精确模拟。研究表明,1+1/2对转涡轮高低压转叶间轴向间距成为追求高效率的制约因素,轴向间距为高压转叶喉部宽度是关键点。因此有关小轴向间距下强激波/叶排干扰的研究应该加强。     

As+注入硅的紫外-可见椭圆偏振光谱

本文采用椭圆偏振光谱法研究了剂量为1×10¹⁶—3×10¹²cm^-2的As⁺注入硅,及其在700℃退火后的光学性质。得出:当As⁺注入剂量增大到某一程度后,便呈非晶特性。低于临界剂量的样品,其n-λ,ε₂-λ关系曲线随剂量的增大而往下方移动,呈有规律变化;退火后,在大于4000?波段,n-λ与ε₂-λ曲线基本恢复到单晶硅状态。但在小于4000?的紫外区却未完全恢复,注入剂量越大,偏离单晶硅就越大。并指出,紫外光区是离子注入硅的信息敏感区;用有效质量模型计算出注入剂量与损伤度的关系。计算结果与实验符合得较好。 关键词：     

掺钕聚甲基丙烯酸甲酯的光学特性

研究了制备的掺钕螯合物Nd(DBM)3Phen材料的吸收光谱、激发光谱、荧光光谱,应用Judd-Ofelt理论计算了该材料的强度参量．分析了钕离子激发态4F3／2的辐射寿命(631 μs)和4F3／2→4IJ′跃迁的受激发射截面和荧光分支比．     

激光二极管反馈干涉的实验观测

利用LabView软件虚拟示波器和信号源,观测了激光二极管反馈干涉实验现象．实验证明反馈回激光二极管的光的入射方向和入射光强以及信号处理电路的带宽,对反馈干涉信号有很大的影响．