X-Ray Diffraction and NMR Study of Inclusion Complex of Podophyllotoxin with β-Cyclodextrin

Podophyllotoxin(Figurel)isalignan,naturallyoccurringinrootsandrhizomesofPodophyllumemodiWall.var.ChineseSprague'.Thiscompoundisclinicallyusedtotreatseveraltypesofcancer2.However,asadrug,itisrestraintedduetoitshightoxicityandsideeffecttohumanbody.Wehavepreparedtheinclusioncomplexofpodophyllotoxinwith0-cyclodextrin(Figure2)inordertodecreasetoxicityandincreasesolubilityofpodophyllotoxin.ThestrUctureoftheinclusioncomplexofthepodophyllotoxinwith0-cyclodextrinhavebeenstudiedbythemethodsofX-raydi…     

静电场对α-LiIO3单晶透射光的影响

沿α-LiIO₃单晶z轴向施加静电场。当沿z轴方向通光时,几乎观察不出晶体透射像的变化;当偏离z轴方向通光时,透射像上显现出一些花纹。本文还作了空间频谱分析,显微观察和光衍射。 关键词：     

Improved Thermostability of Lipase B from Candida antarctica by Directed Evolution and Display on Yeast Surface

To expand the functionality of lipase B from Candida antarctica (CALB), we used the multi-site saturation mutagenesis methods to create CALB mutants with improved thermal stability. The times of residual activity of the mutants mCALB168 and mCALB7 were 14 and 6 times higher than that of the displayed WT-CALB at 60 °C. Amino acid substitutions at positions 218, 219, 220, and 221 in mCALB7 introduced two additional hydrogen bonds and altered part of the surface domain from 217 to 224. In mCALB168, we introduced mutations T57A/R168K, which formed three additional hydrogen bonds. The mutants displayed on yeast significantly increased the thermostability in an aqueous system at 60 °C. These results indicate that yeast surface display technology could dramatically improve the stability of CALB.     

Effect of the V/Ⅲ ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer

Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction.It is found that the densities of screw and edge threading dislocations increase with the V/III ratio of the buffer layer,and the intensities of the yellow luminescence(YL) and blue luminescence(BL) emissions also increase dramatically.However,the density ratio of the edge threading dislocation to the screw threading dislocation remains invariant,as well as the intensity ratio of YL emission to BL emission.It can be concluded from these phenomena that the edge threading dislocation and screw threading dislocation can enhance the YL and BL emissions,respectively.     

Monte Carlo Hamiltonian:Inverse Potential

The Monte Carlo Hamiltonian method developed recently allows to investigate the ground state and low-lying excited states of a quantum system, using Monte Carlo (MC) algorithm with importance sampling. However, conventional MC algorithm has some difficulties when applied to inverse potentials. We propose to use effective potential and extrapolation method to solve the problem. We present examples from the hydrogen system.     

利用V形三能级原子与光场Raman相互作用制备多原子GHZ态

提出了一种利用V形三能级原子与光场Raman相互作用制备多原子GHZ态的方法. 关键词： GHZ态 Raman相互作用 V形三能级原子     

单组分阴离子聚氨酯水乳液结构与性能

聚氨酯乳液;聚醚多元醇;二羟甲基丙酸;单组分阴离子聚氨酯水乳液结构与性能     

尼莫地平分子印迹聚合物的制备及热力学性能研究

采用本体聚合法,以甲基丙烯酸(MAA)为功能单体、三羟甲基丙烷三丙烯酸酯(TMPTA)为交联剂、尼莫地平为模板分子,制备了分子印迹聚合物。运用平衡结合实验,研究了印迹聚合物对尼莫地平、尼群地平、非洛地平药物分子的选择性识别能力。3种药物的静态吸附分配系数KD值分别为0.221 4、0.197 2、0.051 4。结果表明分子印迹聚合物对尼莫地平有较高的选择性。测定了不同温度下印迹聚合物的吸附等温曲线,表明吸附等温线为Ⅰ型吸附等温线,且随着温度的升高吸附量降低,说明吸附过程是放热过程。为了进一步研究印迹聚合物的吸附机理,进行了热力学性质的研究,测定了不同温度下吸附过程的熵变、焓变和吉布斯自由能变化,实验结果表明吸附是焓控制过程。     

对称锥互补问题的一个惩罚NR函数(英文)

本文建立了一个对称锥互补问题的惩罚自然剩余函数,并且证明了单调情形下其相应势函数的水平有界性.     

Si(110)和Si(111)衬底上制备InGaN/GaN蓝光发光二极管

分别在Si(110)和Si(111)衬底上制备了In Ga N/Ga N多量子阱结构蓝光发光二极管(LED)器件.利用高分辨X射线衍射、原子力显微镜、室温拉曼光谱和变温光致发光谱对生长的LED结构进行了结构表征.结果表明,相对于Si(111)上生长LED样品,Si(110)上生长的LED结构晶体质量较好,样品中存在较小的张应力,具有较高的内量子效率.对制备的LED芯片进行光电特性分析测试表明,两种衬底上制备的LED芯片等效串联电阻相差不大,在大电流注入下内量子效率下降较小;但是,相比于Si(111)上制备LED芯片,Si(110)上LED芯片具有较小的开启电压和更优异的发光特性.对LED器件电致发光(EL)发光峰随驱动电流的变化研究发现,由于Si(110)衬底上LED结构中阱层和垒层存在较小的应力/应变而在器件中产生较弱的量子限制斯塔克效应,致使Si(110)上LED芯片EL发光峰随驱动电流的蓝移量更小.