快脉冲直线变压器驱动源模块的原理及实验

 介绍了直线型变压器驱动源（LTD）产生快脉冲的基本原理及技术优势,阐述了快脉冲LTD模块设计的要点,设计了输出脉冲上升时间小于100 ns的快脉冲LTD模块,并进行了初步的实验研究。实验得到该LTD模块充电±16 kV时,短路放电的电流峰值为23.7 kA,电流振荡1/4周期为69.6 ns;充电±50 kV驱动0.85 Ω负载时,电流峰值为41.4 kA,上升时间为36.8 ns（10%~90%）和60.8 ns（0~100%）。     

应用数据挖掘的束流状态描述建模

聚类分析是描述数据群体特征的有效方法.然而,随着挖掘数据库规模的增大,评分函数极值搜索是计算复杂度很高的问题.文中提出了一种新的算法,并将其运用到束流状态描述建模中.试验结果表明,该算法快速有效.同时,重复性是电子储存环的重要指标,聚类模型可作为机器研究和决策的依据,具有指导意义.     

高纯锗探测器的广泛应用和自主研制进展

以目前国际上极为活跃开展的暗物质探测、无中微子双 衰变研究为例,评述了高纯锗探测器的重要性及其广泛的应用前景。介绍了己开展的高纯锗单晶、探测器制备的关键技术研究进展:合作单位已研制出了用于高纯锗单晶材料制备的区熔炉、单晶炉;并制备出直径为20  50 cm、纯度为12N(< 41011  atoms/cm3)、位错< 5000 atoms/cm2 的锗单晶;掌握了高纯锗探测器(平面型、同轴型)制备的关键技术,用进口高纯锗单晶材料制备出的同轴型高纯锗探测器对射线的能量分辨率及探测效率均达到进口产品指标,使用自制的12N 高纯锗单晶材料己制备出平面型高纯锗探测器。呼吁加速高纯锗研制的自主创新步伐,尽早实现其国产化目标。The article reviews importance and wide applications of HPGe detector, especially the application on the dark matter search experiment and double beta decay experiment. The research progress on the Highpurity germanium single crystal and HPGe detector in China has been introduced. The cooperation partner developed new type zone-refining furnace and single crystal furnace. The ultra-purity germanium single crystal with 20~50 cm, purity up to 12N(net impurity concentration is less than 41011 atoms/cm3), and dislocation less than 5 000 /cm3 was prepared. The key technologies for preparing planar and coaxial HPGe detector were mastered. The coaxial detector, which has been made of imported ultra-purity germanium single crystal has excellent energy resolution and efficiency as the imported commercial detector. The planar detector using selfmade germanium single crystal was also successfully manufactured. The research group appeals for speeding up the pace of independent innovation on the high-purity germanium, and achieving the high-purity germanium localization as soon as possible.     

同步辐射X射线成像光束线劳厄双晶单色器设计

上海光源X射线成像光束线采用多极扭摆器(wiggler)作为辐射光源, 提出一种劳厄双弯晶单色器的设计方案. 计算结果显示, 可获得固定出口的平行单色光束, 能量调谐范围覆盖19—120keV, 在33keV时, 输出光子通量及通量密度分别为1.9×10¹³phs/s和3.8×10¹⁰phs/s/mm². 分析了劳厄晶体的聚焦及单色化性能, 计算了输出光子通量及单色器的热负载情况. 与传统的双平晶方案相比, 本设计在获得高通量和解决热负载等方面有明显的优越性, 并能有效控制热形变.     

用自制仪器演示光通信

介绍一种新的小型演示仪器.该仪器用于普通物理光通信实验教学,能形象生动地演示光信号的耦合、传输、解调以及还原。仪器结构简单,思路清晰,可操作性强,对学生有很强的演示性。     

双硬度靶对球形弹丸的防护性能

以钢/铝双硬度爆炸焊接复合靶为研究对象,采用系列弹道实验和数值模拟方法,研究了其在球形弹丸垂直侵彻作用下的抗侵彻性能。侵彻实验利用直径为14.5mm的滑膛枪发射直径为6mm的钢质球形弹丸;采用LS-DYNA3D非线性有限元程序和有限元-光滑粒子流体动力学(FE-SPH)耦合法,进行数值模拟。基于实验和数值模拟结果,分析了不同靶板的毁伤机理和破坏模式,以及靶板厚度、强度等因素对复合靶抗侵彻性能的影响。结果表明:在球形弹丸的垂直侵彻作用下,钢面板发生剪切冲塞破坏,铝背板发生延性扩孔破坏;对于双层靶而言,钢面板与铝背板的厚度比约为2/3时,复合靶的抗侵彻性能最差;数值计算结果与实验结果吻合良好,表明FE-SPH耦合算法可较好地预测双层复合靶板的抗侵彻性能。     

基于超临界流体技术制备葡萄糖脂质体的实验研究

脂质体由于其特殊的结构和性能,是一种很有发展潜力的药物载体,在医药和化妆品等行业具有广阔的应用前景。超临界逆向蒸发法是用超临界流体代替有机溶剂制备脂质体的方法,具有对水溶性药物脂质体制备过程简单、包覆率高等特点。以葡萄糖为模型药物,利用该方法制备出了葡萄糖脂质体,并详细考察了不同工艺条件对脂质体粒径和包覆率的影响。结果表明:用超临界逆向蒸发法可成功地制备出最小粒径为290nm、包覆率最高可达41.3%的葡萄糖脂质体。压力、温度和平衡时间对粒径和包覆率都有较大的影响。压力在10~30MPa时,随压力的增加,脂质体粒径显著减小至某一值后,基本趋于稳定,而包覆率逐渐增加,达到25.7%~27.5%,随后包覆率逐渐减小;温度在35~65℃时,随温度的增加粒径显著减小至最小值,然后逐渐增大,而包覆率一直增大,最高可达41.3%;平衡时间在15~45min时,随平衡时间的增加,粒径相对稳定,而包覆率显著增加,超过45min之后,粒径显著增加,包覆率显著下降。     

聚合物前驱体衍生SiC纳米棒的光学性质

采用聚硅氮烷前驱体热裂解方法制备SiC纳米棒,并利用SEM、XRD和EDX表征了SiC纳米棒的结构和组成,表明得到的SiC的组分比C：Si接近1：1。用微区Raman和光致发光方法研究了纳米棒的光学性质。观测到SiC的TO模式对应的Raman峰和相邻肩峰。对SiC纳米棒观测到其紫外3．25eV附近强的光致发光峰,我们认为它归结为α型SiC带间的跃迁。通过XRD、Raman和光发射谱,我们推测前驱体热裂解得到的SiC纳米棒是一个混晶,纳米棒的表层是立方晶,而内层主要为a—SiC。     

New Soliton-like Solutions for (2+1)-Dimensional Breaking Soliton Equation

The (2+1)-dimensional breaking soliton equation describes the interaction of a Riemann wave propagating along the y-axis with a long wave along the x-axis. In this paper, with the aid of symbolic computation, six kinds of new special exact soltion-like solutions of (2+1)-dimensional breaking soliton equation are obtained by using some general transformations and the further generalized projective Riccati equation method.     

Shallow Donor Impurity Ground State in a GaAs/AlAs Spherical Quantum Dot within an Electric Field

Using the configuration-integration methods {(CI)} [Phys. Rev.B 45 (1992) 19], we report the results of the Hydrogenic-impurity ground state in a GaAs/AlAs spherical quantum dot under an electric field. We discuss the variations of the binding energies of the Hydrogenic-impurity groundstate as a function of the position of impurity D, the radius R of the quantum dot, and also as a function of electric field F. We find that the ground energy and binding energy of impurity placed anywhere depend strongly on the position of impurity. Also, electric field can largely change theHydrogenic-impurity ground state only limiting to the big radius of quantum dot. And the differences in energy level and binding energyare observed from the center donor and off-center donor.