黑腔冷冻靶传热与自然对流的数值模拟研究

惯性约束聚变的设计要求在靶丸内形成均匀光滑的氘氚冰层, 靶丸周围的热环境对冰层的质量特别是低阶粗糙度有很大的影响. 本文对自主研发的黑腔冷冻靶实验装置中的热物理问题展开了数值模拟, 重点考察了黑腔冷冻靶的传热和流体力学特性. 通过参数分析得到了自然对流对靶丸温度均匀性产生影响的临界条件. 比较了黑腔不同布置朝向时的流场和温度分布, 结果显示黑腔水平布置时自然对流更加强烈, 造成的靶丸温度不均匀性也更大. 在此基础上, 讨论了消除自然对流影响的可能性, 结果发现仅当黑腔垂直布置时利用黑腔分区方法能够消除对流效应对靶丸温度不均匀性的影响而黑腔水平布置时不能消除. 研究结论对于实验中冷冻靶结构的设计、改进和实验的开展等具有指导意义.     

铜锌锡硫薄膜材料及其器件应用研究进展

铜锌锡硫薄膜材料组成元素储量丰富, 环境友好, 成本低廉, 成为最具前景的薄膜材料之一. 目前, Cu₂ZnSn(S, Se)₄ (CZTSSe)薄膜太阳电池的最高转换效率已经达到12.6%. 本文总结了Cu₂ZnSnS₄ (CZTS)的发展历史, 依次介绍了CZTS薄膜材料的结构特性、光学特性、电学特性、界面特性和Na对CZTS 薄膜的影响, 详细介绍了CZTS薄膜的制备方法及器件应用的最新研究进展, 总结了目前CZTS薄膜太阳电池发展中存在的问题, 展望了今后的研究方向.     

量子受限效应和对称性效应对硅光子晶体禁带的影响

光子晶体不仅可以用来调控自发辐射, 还可以用来控制光的传输和局域. 采用平面波展开法进行模拟计算, 分析硅背景下的二维正方、三角晶格光子晶体散射基元的形状和空间取向对光子禁带的影响. 计算结果表明: 对称性和量子受限效应之间的竞争是导致光子晶体禁带宽度发生变化的原因.     

单轴应变硅N沟道金属氧化物半导体场效应晶体管电容特性模型

电容特性模型是单轴应变硅金属氧化物半导体场效应晶体管(Si MOSFET)和电路进行瞬态分析、交流小信号分析、噪声分析等的重要基础. 本文首先建立了单轴应变Si NMOSFET 的16 个微分电容模型, 并将微分电容的仿真结果与实验结果进行了比较, 验证了所建模型的正确性. 同时对其中的关键性栅电容C_gg 与应力强度、偏置电压、沟道长度、栅极掺杂浓度等的关系进行了分析研究. 结果表明, 与体硅器件相比, 应变的引入使得单轴应变Si NMOSFET器件的栅电容增大, 随偏置电压、沟道长度、栅极掺杂浓度的变化趋势保持不变.     

双壳层靶丸金属层电沉积装置设计

设计了一种新型双壳层靶丸金属层电沉积装置,借助计算机模拟了其设计原理,分析了微球的运动及镀层的生长模式,介绍了其各部分结构和功能。借助理论计算,确定了镀槽的整体尺寸,其中槽体半径确定为5cm。镀槽的特殊结构使微球上部镀层沉积速度较快,结合小球的自转及围绕圆柱体的公转运动实现镀层均匀沉积。镀液及微球的运动模式使镀液流速合并了主盐浓度、小球平动速度、小球转动速度三个关键参数,简化了对沉积过程的控制。在新旧装置上进行了电沉积实验,制备出了镀层厚度分别为9μm和2μm的空心金微球,结果表明:使用设计的装置可制备表面质量良好、厚度均匀且可控的金属微球,镀层厚度由沉积时间、金属层密度、镀液比重、微球芯轴的等效密度等决定。     

Sulfur Immobilized in Hierarchically Porous Structured Carbon as Cathodes for Lithium–Sulfur Battery with Improved Electrochemical Performance

In order to overcome the main obstacles for lithium–sulfur batteries, such as poor conductivity of sulfur, polysulfide intermediate dissolution, and large volume change generated during the cycle process, a hard‐template route is developed to synthesize large‐surface area carbon with abundant micropores and mesopores to immobilize sulfur species. The microstructures of the C/S hybrids are investigated using field emission scanning electron microscopy, transmission electron microscopy, X‐ray diffraction, Raman spectroscopy, X‐ray photoelectron spectroscopy, nitrogen adsorption–desorption isotherms, and electrochemical impedance spectroscopy techniques. The large surface and porous structure can effectively alleviate large strain due to the lithiation/delithiation process. More importantly, the micropores can effectively confine small molecules of sulfur in the form of S_2–4, avoiding loss of active S species and dissolution of high‐order lithium polysulfides. The porous C/S hybrids show significantly enhanced electrochemical performance with good cycling stability, high specific capacity, and rate capability. The C/S‐39 hybrid with an optimal content of 39 wt% S shows a reversible capacity of 780 mA h g^?1 after 100 cycles at the current density of 100 mA g^?1. Even at a current density of 5 A g^?1, the reversible capacity of C/S‐39 can still maintain at 420 mA h g^?1 after 60 cycles. This strategy offers a new way for solving long‐term reversibility obstacle and designing new cathode electrode architectures.     

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ～10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.

     

多峰场负氢离子源磁体布局对等离子体特性影响的数值模拟研究

负氢离子源的研究对于响应国家散裂中子源建设和国际热核聚变实验堆计划的开展都具有十分重要的意义. 由于离子源本身的物理特性导致数值模拟成为不可或缺的研究手段, 基于此, 首先对自主研发的全三维粒子模拟/蒙特卡罗碰撞算法进行阐述, 然后对负氢离子体积过程进行描述, 并在此基础上对中国原子能研究中心的多峰质子源进行了系统仿真, 在引出磁体极性相同和相反两种情形下, 分别对多峰质子源放电特性进行了讨论和分析. 结果显示: 在相反极性下, 两引出磁体附近的磁漂移方向相同且数值较大, 即磁漂移剧烈, 导致电子总数较大且高能电子在特定区域活跃, 进而负氢离子体积产率较高, 即负氢离子在空间呈现Y漂移; 反之, 在相同极性下, 电子约束效果相对较差且负氢离子体积产率较低, 但其空间分布均匀.     

Efficient self-seeding of a pulsed Ti3+:Al2O3 laser

We describe the design considerations and operating characteristics of a compact, widely tunable, narrow-linewidth, megawatt-class pulsed laser system based on Ti(3+):Al(2)O(3) (Ti:sapphire) pumped by the second harmonic of a 1.06-mum Nd:YAG laser. The system delivers 10 mJ in a 5-ns near-transform-limited single-longitudinal-mode (SLM) pulse with a threshold of 20 mJ and a slope efficiency greater than 40%. By the technique of self-seeding, in which a portion of the gain medium's spontaneous fluorescence is coupled back to the laser cavity, SLM operation may be obtained across the entire gain profile of Ti:sapphire with a minimum number of optical components and without external seeding.     

纳米晶Y_2SiO_5∶Eu的浓度猝灭研究

报道了分别用溶胶－凝胶法合成的Ｙ２ＳｉＯ５∶Ｅｕ纳米晶和用高温固相法合成常规尺度的Ｙ２ＳｉＯ５∶Ｅｕ材料的光致发光光谱和猝灭浓度的实验研究．结果表明：纳米Ｙ２－ｘＥｕｘＳｉＯ５比常规尺度的Ｙ２－ｘＥｕｘＳｉＯ５有更高的猝灭浓度和更高的发光亮度．理论分析认为这是由于在纳米材料中能量共振传递被阻断和猝灭中心在各个纳米晶内分布的涨落造成的．这个结果为高亮度的Ｙ２ＳｉＯ５∶Ｅｕ纳米材料的实际开发应用展示了广阔前景．