Diffusion and ballistic contributions of electron-electron interaction to the conductivity in an Al0.26Ga0.74N/AlN/GaN heterostructure

The results of an experimental study of quantum correction of electron-electron interaction (EEI) to the conductivity of two-dimensional electron gas (2DEG) in an undoped heterostructure are reported. A small but significant decrease of the Hall slope with the increase of temperature was discovered. This is not due to the increase of electron concentration as temperature increases but to the EEI effect. Both diffusion and ballistic contributions of EEI to the conductivity of 2DEG were observed. As the temperature increases, the negative diffusion EEI correction to the conductivity increases in an absolute value while the ballistic EEI correction reduces to a renormalization of the transport mobility.     

First-principles study of the effect of iron doping on the electronic and magnetic properties of TbMn2O5

We have studied the electronic and magnetic properties of TbFe_xMn_2−xO₅ (x=0, 0.125, 0.25) samples using first-principles density functional theory within the generalized gradient approximation (GGA) schemes. The crystal structure of TbMn₂O₅ is orthorhombic containing Mn⁴⁺O₆ octahedra and Mn³⁺O₅ pyramids. The structure changes to monoclinic symmetry for the Fe-doping at the Mn sites. Our spin-polarized calculations give an insulating ground state for TbMn₂O₅ and a metallic ground state for Fe-doped TbMn₂O₅. Based on the magnetic properties calculations, it is found that the magnetic moment enhances with increase in the Fe-content in TbMn₂O₅. Most interestingly, the enhanced magnetic moment is due to a substantial reduction of the magnetic moments at the Fe sites.     

Analytical study of an active piezoelectric absorber on vibration attenuation of a plate

The attenuation of the transverse vibration of a plate, subjected to a harmonic force, is studied. This goal can be achieved by using an active dynamic absorber. The active absorber is made of a pair of piezoelectric sheets, attached to both sides of the plate, and closed electric circuits. One piece of the piezoelectric material provides a sensor for detecting the motion of the plate. Another piece serves as an active dynamic absorber. The equations of motion of the composite plate, including the plate and the piezoelectric material, and the circuit equations of the sensor and the absorber are derived. The displacements of the plate and the currents in the circuits are calculated. The active absorber can successfully attenuate the vibration. The numerical results show that the proposed active absorber can offer more reduction than that using a passive absorber while the absorber is designed to suppress the resonance of a particular vibration mode. Moreover, the active absorber can also reduce the displacements corresponding to other uncontrolled modes. The effects of altering various parameters of the active absorber are studied and discussed.     

Optical properties of Nd-doped InGaAsP epilayers

The optical properties of Nd-doped InGaAsP epilayers grown by liquid phase epitaxy (LPE) have been studied by photoluminescence and Raman scattering. The full width at half maximum (FWHM) of the photoluminescence peak has been found to decrease as the doping amount of Nd element increases. The narrowest value of the FWHM of PL peak is 7.5 meV, which is smaller by about 46% than that of the undoped InGaAsP and better than previous reports on similar composition layers. Using a spatial correlation model, we found that the asymmetric broadening of the lineshape of the Raman signal is not influenced by the Nd doping. We hence conclude that the introduction of the Nd element can greatly reduce the residual impurities of LPE-grown layers, but the Nd element is not incorporated into the epitaxial layers during the purification.     

Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well

Photoluminescence (PL) spectra and time-resolved PL are measured from around 10 to 300 K for the InGaN/GaN single quantum wells (SQWs) with well widths of 1.5, 2.5, 4 and 5 nm. For the SQWs with the well widths of 1.5 and 2.5 nm, the peak position of PL exhibits an S-shaped shift with increasing temperature. The radiative recombination time τ_RAD begins to increase at the temperature for the position to change from the red-shift to the blue-shift. The steep increase of τ_RAD is observed beyond the temperature from the blue-shift to the red-shift. For the SQWs with the well widths of 4 and 5 nm, the peak position of PL exhibits a monotonic red-shift. τ_RAD decreases at first and then increases with temperature. It is about 100-times longer in the low temperature region and about 10-times longer at room temperature as compared with those of the SQWs with narrower widths.     

Valence and inner proton hole states in119in via the (d,3He) reaction

Proton holes states have been studied up toE _x=17 MeV andE _x=3.5 MeV in the¹¹⁹In nucleus via the¹²⁰Sn(d,³He)¹¹⁹In reaction respectively atE _d=108.4 MeV andE _d=51 MeV. DWBA analysis of angular distributions has allowedl attributions for a large number of new levels and the determination of valence and inner hole strength distributions. The first 1g _9/2, 2p _1/2 and 2p _3/2 levels only exhaust 40%, 60% and 32% of their respective sum rule limits. The missing strengths are shared among several low lying levels and significant higher lying contributions. The 1f strength, not identified in the previous experiments is spread fromE _x=1 MeV to about 17 MeV. The low lying levels aroundE _x=2.4 MeV could exhaust some 40% of the 1f _5/2 sum rule. The higher lying strength with a flat maximum aroundE _x=7.5 MeV could account for the 1f _7/2inner hole strength and the missing 1f _5/2 valence strength. The experimental strength functions compare rather well with the predictions of the quasiparticle-phonon model.     

Bose-Einstein correlations for pions produced inp p collisions at 360 GeV/c

Zeitschrift für Physik C Particles and Fields - Correlations among identically charged pions were measured for pions produced inp p collisions at 360 GeV/c using the EHS spectrometer. The...     

Loss coefficient for amplified luminescence of laser diode arrays

A system of radiative transfer equations is used to calculate the loss coefficient for amplified luminescence fluxes propagating along and transverse to the cavity axis in the active layer of high-power laser diode arrays taking the spreading of charge carriers in the cladding and contact layers of InGaAs/GaAs/AlGaAs heterostructures into account. It is shown that the spreading of charge carriers leads to a significant change in the amplified luminescence flux which can contribute up to 18% to the lasing threshold of these laser diode arrays. The calculated loss coefficients can greatly simplify the determination of the amplified luminescence fluxes in laser diode arrays with an error of less that 16% and can be used to determine how much the amplified luminescence affects the power and dynamic characteristics of diode arrays.     

In situ preparation of Bi-Sr-Ca-Cu-O superconducting films by laser sputtering

Superconducting films of Bi-Sr-Ca-Cu-O on (100) MgO substrates have been fabricated by XeCl-excimer-laser sputtering from ceramic targets of Bi_2.5Sr₂Ca₂Cu₃O_y in O₂ atmosphere. The films were polycrystalline with the c-axis (30.80±0.02Å) preferably oriented normal to the substrate surface. Without post-annealing the films showed metallic resistance behavior with zero resistance temperatures of up to T_c(0) }- 79 K. The critical current density of the films had values of up to j_c(50K)}- 10⁴ A/cm².     

Nonlinear oscillations and chaotic behavior due to impact lonization of shallow donors in InSb

Both nonlinear oscillations and chaotic behavior in n-InSb are experimentally investigated for the case of impact ionization of shallow donors at low temperatures. Complex behavior including a simple periodic oscillation, a period-doubling route to chaos, and quasiperiodic behavior are observed with increasing electric field as the parameter. For the first time, a type of pitchfork bifurcation (period halving) is seen.