Determination of trace levels of diosmin in a pharmaceutical preparation by adsorptive stripping voltammetry at a glassy carbon electrode.

A systematic study on the electrochemical behavior of diosmin in Britton-Robinson buffer (pH 2.0-10.0) at a glassy carbon electrode (GCE) was made. The oxidation process of the drug was found to be quasi-reversible with an adsorption-controlled step. The adsorption stripping response was evaluated with respect to various experimental conditions, such as the pH of the supporting electrolyte, the accumulation potential and the accumulation time. The observed anodic peak current at +0.73 V vs. Ag/AgCl reference electrode increased linearly over two orders of magnitude from 5.0x10(-8) M to 9.0x10(-6) M. A limit of detection down to 3.5x10(-8) M of diosmin at the GCE was achieved with a mean recovery of 97+/-2.1%. Based on the electrochemical data, an open-circuit accumulation step in a stirred sample solution of BR at pH 3.0 was developed. The proposed method was successfully applied to the determination of the drug in pharmaceutical formulations. The results compared favorably with the data obtained via spectrophotometric and HPLC methods.     

Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si

The influence of processing parameters on the electrical characteristics of RuO₂/LaAlO₃/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO₃ on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result is explained by oxygen ability to heal oxygen vacancies in the LaAlO₃ film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO₃ on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime. PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc     

EPR-detected photoinduced electron transfer in three structurally related molecular triads

A comparative electron paramagnetic resonance (EPR) study has been performed on a series of structurally related molecular triads which undergo photoinduced electron transfer and differ one from the other in terms of the acceptor or donor moieties. The molecular triads, C-P-C₆₀, TTF-P-C₆₀ and C-P-P_F, share the same free-base, tetraarylporphyrin (P) as the primary electron donor, which after light excitation initiates the electron transfer process, but differ either in terms of the electron acceptor (fullerene derivative, C₆₀, versus fluorinated free-base porphyrin, P_F), or in terms of the final electron donor (carotenoid polyene, C, versus tetrathiafulvalene, TTF). All these molecular triads can be considered artificial photosynthetic reaction centers in their ability to mimic several key properties of the reaction center primary photochemistry. Photoinduced charge separation and recombination have been followed by time-resolved EPR in a glass of 2-methyltetrahydrofuran and in the nematic phase of the uniaxial liquid crystal E-7. All the triads undergo photoinduced electron transfer, with the generation of charge-separated states in both the low-dielectric environment of the 2-methyl-tetrahydrofuran glass and in anisotropic E-7 medium. Different photochemical pathways have been recognized depending on the specific donor and acceptor moieties constituting the molecular triads. In the presence of the tetrathiafulvalene electron donor singlet- and triplet-initiated electron transfer routes are concurrently active. Recombination to the low-lying carotenoid triplet state occurs in the carotene-based triads, while singlet recombination is the only active route for the TTF-P-C₆₀ triad, where a low-lying triplet state is lacking. Long-lived charge separation has been observed in the case of TTF-P-C₆₀: about 8 μs for the singlet-born radical pair in the glassy isotropic matrix and about 7 μs for the triplet-born radical pair in the nematic phase of E-7. For all the molecular triads, a weak exchange interaction (J?1 G) between the electrons in the final spin-correlated radical pair has been evaluated by simulation of the EPR spectra, providing evidence for superexchange electronic interactions mediated by the tetraarylporphyrin bridge.     

Smart Geodesic Tracing in GRworkbench

We have developed a new tool for numerical work in General Relativity: GRworkbench. We discuss how GRworkbench's implementation of a numerically-amenable analogue to Differential Geometry facilitates the development of robust and chart-independent numerical algorithms. We consider, as an example, geodesic tracing on two charts covering the exterior Schwarzschild space-time.     

一种新型彩色三维光学成像系统

提出一种新型三维彩色光学数字成像系统。此系统利用投影结构光对现实世界中的物体进行数字化，同时得到对应的彩色纹理。详细介绍了系统的硬件设计和软件体系结构设计，得到物体彩色纹理的两种不同方法；直接获取和从编码条纹中提取，给出了用该系统得到的实验结果并简单评价了系统的性能。此系统在反求工程、影视制作、三维游戏制作、医学应用等方面有远大的应用前景。     

基元阀在汽轮机进汽阀研究中的应用

阀碟型线对汽轮机进汽阀的性能影响很大，本文设计了三种形式的基元阀，通过数值模拟手段研究了阀碟型线对流场的影响；得出了不同阀碟形式的性能．     

Collisional excitation of Na-Rydberg atoms

The scattering of heavy ion with a multilevel Rydberg atom in the presence of an electromagnetic field is studied. The interaction of Rydberg atom and the e.m field is explored using non-perturbative quasi-energy technique. Although the results are presented for selected excitations but in actual calculations we have included many levels of the atom. The effect of various parameters are shown on collisional excitation process. As an illustration detailed calculations are performed for the inelastic proton-Na Rydberg atom collision accompanied by the transfer of photons and the effects of dressing due to the field are considered. The emphasis of the present work is on collision induced transitions especially the case that involves change of orbital as well as principal quantum number. Received 26 December 2001 / Received in final form 8 April 2002 Published online 19 July 2002     

Lateral interactions in the thermal desorption of H2 from clean Cu/Ni(110) alloy surfaces

The adsorption of hydrogen on a clean Cu10%/Ni90% (110) alloy single crystal was studied using flash desorption spectroscopy (FDS), Auger electron spectroscopy (AES), and work function measurements. Surface compositions were varied from 100% Ni to 35% Ni. The hydrogen chemisorption on a-surface of 100% nickel revealed strong attractive interactions between the hydrogen atoms in accordance with previous work on Ni(100). Three desorption states (β₁, β₂ and α) appeared in the desorption spectra. The highest temperature (α) state was occupied only after the initial population of the β₂-state. As the amount of copper was increased in the nickel substrate, desorption from the higher energy binding α-state was reduced, indicating a decrease in the attractive interactions among hydrogen atoms. The hydrogen coverage at saturation was not affected by the addition of copper to the nickel substrate until the copper concentration was greater than 25% at which a sharp reduction in saturation coverage occurred. This phenomenon was apparently due to the adsorption of hydrogen on Ni atoms followed by occupation of NiNi and CuNi bridged adsorption sites, while occupation of CuCu sites was restricted due to an energy barrier to migration.     

Electron traps and positive DLTS signals in VPE GaAs MESFETs

Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.