The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.     

A novel optical polarimeter based on the signal width measurement of the waveform

For the optical polarimeter based on the structure of polarizer–Faraday modulator–analyzer, a novel method of optical rotation measurement was proposed by the waveform analysis of optical intensity signals. The calculation method of the optical rotation was provided by measuring the signal width of the waveform. Furthermore, the optical rotations of sugar solutions with different concentrations were measured by this method, and the fitting degree of obtained fitting curve is 0.9996. This showed that this method was effective.     

Diode-end-pumped Tm,Ho:YVO<Subscript>4</Subscript> microchip laser at room temperature

Room temperature Tm, Ho:YVO₄ microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M ² factor was measured to be 1.4.     

近场强度分布对线性相位反演算法复原效果的影响

利用数值仿真的方法详细的分析了近场强度分布对线性相位反演算法复原效果的影响.对近场强度分布分别为倾斜、环形和高斯随机型的情况下的复原结果与光强均匀时的复原结果进行对比,结果表明像倾斜型这种大部分为奇函数的近场强度分布对复原效果的影响比较恶劣;而像环形、随机型这样的偶函数或大部分为偶函数的近场强度分布对复原效果的影响则不...     

Terahertz coherent transition radiation based on an ultrashort electron bunching beam

The experimental result of terahertz (THz) coherent transition radiation generated from an ultrashort electron bunching beam is reported.During this experiment,the window for THz transmission from ultrahigh vacuum to free air is tested.The compact measurement system which can simultaneously test the THz wave power and frequency is built and proofed.With the help of improved Martin-Puplett interferometer and Kramers-Krong transform,the longitudinal bunch length is measured.The results show that the peak power of THz radiation wave is more than 80 kW,and its radiation frequency is from 0.1 THz to 1.5 THz.     

Compound buried layer SOI high voltage device with a step buried oxide

A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect.     

光栅减反层太阳能电池光电转换效率的研究

运用时域有限差分方法,研究了光栅减反层结构对太阳能电池光电转换效率及储能效果的影响.具体从光栅形状、高度以及光栅表面金属薄膜厚度出发.结果表明经光栅减反层优化表面结构的太阳能电池的光电转换效率显著增大,储能效果大大得到提升.尤其是三角形光栅太阳能电池.随着镀层厚度的增加,储能效果增加,但当薄膜厚度过厚时,储能效果反而降低.     

TG-FTIR技术对水氯镁石结晶热解过程的研究

水氯镁石脱水是镁资源利用的关键.其中一种重要的方法是向水氯镁石中添加助剂形成复盐及络合物脱水.通过缓慢冷却水氯镁石及盐酸苯胺的过饱和水溶液制备了水氯镁石-盐酸苯胺结晶物.通过TGDTA-FTIR联用技术分析了盐酸苯胺、水氯镁石以及盐酸苯胺-水氯镁石结晶物的热解过程,定性检测每步分解的逸出气体以推测反应过程.结果显示:盐酸苯胺在400℃以前仅发生物理变化;水氯镁石的热解分阶段进行,205℃以前发生脱去四个结晶水,205℃以后在脱水反应的同时发生水解反应生成HCl;盐酸苯胺-水氯镁石结晶物分阶段脱水、脱盐酸苯胺,整个过程没有水解现象发生,能够得到高纯度无水氯化镁.     

灵敏度控制思想在主动膜系设计中的快速实现算法

 基于斜入射薄膜制备实践中镀膜误差对光谱性能的严重退化影响的认识,提出了一种基于灵敏度控制思想的主动膜系设计方法。在深入分析了镀膜中膜层结构参数误差的分布规律的基础上,运用膜系光谱系数关于膜层参数的导数计算的解析模型,建立了膜系灵敏度的定量计算模型和快速实现算法。以一45°入射高精度消偏振增透膜的设计实验为例,探讨了灵敏度控制思想在膜系设计中的可行性、快速性和有效性。结果表明,这一新型设计方法不会显著增加程序时间消耗,能获得具有良好可镀制性能的薄膜,对于正入射和宽角度入射膜同样适用,而且可以避免昂贵的失败试镀和采样,有助于缩短新薄膜的生产周期,特别是对于高精度斜入射薄膜的重复性制备具有重要意义。     

螺旋轴棱锥的光束传输特性

 分析了螺旋轴棱锥的结构和光传输特性,基于衍射积分理论研究了发散球面波和拉盖尔-高斯光束经螺旋轴棱锥后的传输过程。研究表明,发散球面波经过螺旋轴棱锥后产生贝塞尔光束,其阶数与拓扑电荷数相同,但中心光斑（空心光斑）半径随传输距离的增加而变大;拉盖尔-高斯光束入射后同样产生贝塞尔光束,但其阶数变为拉盖尔-高斯光束和螺旋轴棱锥的拓扑电荷数之和,出射光束的拓扑电荷数与阶数相等。