Hopping domain wall induced by paired adatoms on an atomic wire: si(111)-(5 x 2)-Au

We observed an inhomogeneous fluctuation along one-dimensional atomic wires self-assembled on a Si(111) surface using scanning tunneling microscopy. The fluctuation exhibits dynamic behavior at room temperature and is observed only in a specific geometric condition; the spacing between two neighboring adatom defects is discommensurate with the wire lattice. Upon cooling, the dynamic fluctuation freezes to show the existence of an atomic-scale dislocation or domain wall induced by such "unfavorably" paired adatoms. The microscopic characteristics of the dynamic fluctuation are explained in terms of a hopping solitonic domain wall, and a local potential for this motion imposed by the adatoms is quantified.     

Molecular beam epitaxy of GaSb on ZnTe/GaAs: Influence of the chemical composition of ZnTe surface

We have studied the molecular beam epitaxy (MBE) of GaSb films on GaAs (0 0 1) substrates by using ZnTe as a new buffer layer. GaSb films were grown on two distinct ZnTe surfaces and the influence of surface chemical composition of ZnTe on the morphological and structural properties of GaSb films has been investigated. Initial 2-dimensional (2D) growth of GaSb films is obtained on Zn-terminated surface consequently smooth morphology and high crystal quality GaSb films are achieved. The thin GaSb film (0.4 μm) grown on Zn-terminated ZnTe surface reveals considerably narrow X-ray diffraction linewidth (113 arcsec) along with small residual strain, which strongly supports the availability of ZnTe buffer for the growth of high-quality GaSb film.     

Bifunctional organocatalyst for methanolytic desymmetrization of cyclic anhydrides: increasing enantioselectivity by catalyst dilution

Highly enantioselective methanolysis of meso-cyclic anhydride was achieved with bifunctional organocatalyst containing a quinine-thiourea moiety; unusual concentration, temperature and solvent effects on the enantioselectivity can be explained in terms of a mechanism involving monomer-dimer equilibration of the catalyst.     

Photoexcitation and photoionization dynamics of water photolysis

Despite the importance of water photolysis in atmospheric chemistry, its mechanism is not well understood. Two different mechanisms for water photolysis have been proposed. The first mechanism is driven by water photoexcitation, followed by the reaction of the active hydrogen radical with water clusters. The second mechanism is governed by the ionization process. Both photoexcited and photoionized mechanisms are complementary, which is elucidated by using excited-state ab initio molecular dynamics simulations based on complete active space self-consistent field approach and unrestricted M?ller-Plesset second-order perturbation theory based Born-Oppenheimer molecular dynamics simulations.     

Spherical Polarization Body: Synthesis of Monodisperse Micron‐Sized Polyaniline Composite Particles

A new method to synthesize uniform polyaniline‐coated composite microparticles was contrived considering the surface reactivity and porous structure of substrate polymer particles. It was found that the pore diameter together with the epoxy functional group plays a crucial role in controlling the structure of polyaniline shell. The polyaniline composite particles produced in this study are believed to find great applicability in piezoelectronics and as electro‐rheological fluids.     

Fabrication of a freestanding GaN layer by direct growth on a ZnO template using hydride vapor phase epitaxy

A new hydride vapor phase epitaxy (HVPE)-based approach for the fabrication of freestanding GaN (FS-GaN) substrates was investigated. For the direct formation of low-temperature GaN (LT-GaN) layers, the growth parameters were optimized: the polarity of ZnO, the growth temperature, and the V/III ratio. The FS-GaN layer was achieved by gas etching in an HVPE reactor. A fingerprint of Zn out-diffusion was detected in the photoluminescence measurements, especially for the thin (80 μm) FS-GaN film; however, a thicker film (400 μm) was effectively reduced by optimization of GaN growth.     

Influence of Morphological Homogeneity of Superspherical Gold Nanoparticles on Plasmonic Photothermal Heat Generation

The plasmonic photothermal (PPT) characteristics of gold nanostructures have been extensively investigated theoretically and experimentally due to their potential for use materials science and industry. The management of the size and shape of gold nanoparticles has been a key issue in the development of better solutions for PPT heat generation because their size and shape determine their resultant photothermal properties. However, the light absorption of gold nanostructures is mainly dependent on the wavelength and orientation of the incident light; hence, maintaining uniform size and shape is critical for achieving maximum photothermal energy. Morphologically homogeneous spherical gold nanoparticles, or super gold nanospheres prepared by slowly etching uniform octahedral gold nanoparticles, demonstrate better PPT heat generation compared with commercially available nonsmooth gold nanoparticles (GNSs). The PPT heating experiments show a maximum temperature difference of 5.7 °C between the super and ordinary GNSs with the same average maximum Feret's diameters, which result from the more efficient PPT heat power generation (20.6%) of the super GNSs. In an electromagnetic‐wave simulation, the super GNSs show lower polarization dependence and a 24.6% higher absorption cross‐section than ordinary GNSs.     

Growth of carbon nanotubes on stainless steel substrates by DC-PECVD

We report on the fabrication of carbon nanotubes (CNTs) on Ni-coated stainless steel (SUS) substrates by using dc plasma enhanced chemical vapor deposition. The synthesized CNTs have the diameter of about 30 nm and the length of about 1.2 μm. To verify the effects of SUS substrates on the growth of CNTs, CNTs had also been grown on Ni-coated Si substrates. CNTs grown on the SUS substrates were more uniform compared with those grown on the Si substrates. Field emission properties of the CNT films were measured in the diode configuration, and the turn-on electric field of 3.87 V/μm and field enhancement factor β of about 1737 were obtained from the synthesized CNTs at the gap of 500 μm between the SUS substrate and the anode. These results have not only clarified the effects of the substrate on the growth of CNTs, but also shown the potential of CNTs in field emission applications, especially CNT-based cold-cathode X-ray tubes.