Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness.     

Complete condensation in a zero range process on scale-free networks

We study a zero range process on scale-free networks in order to investigate how network structure influences particle dynamics. The zero range process is defined with the rate p(n) = n(delta) at which particles hop out of nodes with n particles. We show analytically that a complete condensation occurs when delta < or = delta(c) triple bond 1/(gamma-1) where gamma is the degree distribution exponent of the underlying networks. In the complete condensation, those nodes whose degree is higher than a threshold are occupied by macroscopic numbers of particles, while the other nodes are occupied by negligible numbers of particles. We also show numerically that the relaxation time follows a power-law scaling tau approximately L(z) with the network size L and a dynamic exponent z in the condensed phase.     

Asymmetrically coupled directed percolation systems

We introduce a dynamical model of coupled directed percolation systems with two particle species. The two species A and B are coupled asymmetrically in that A particles branch B particles, whereas B particles prey on A particles. This model may describe epidemic spreading controlled by reactive immunization agents. We study nonequilibrium phase transitions with attention focused on the multicritical point where both species undergo the absorbing phase transition simultaneously. In one dimension, we find that the inhibitory coupling from B to A is irrelevant and the model belongs to the unidirectionally coupled directed percolation class. On the contrary, a mean-field analysis predicts that the inhibitory coupling is relevant and a new universality appears with a variable dynamic exponent. Numerical simulations on small-world networks confirm our predictions.     

Coevolutionary extremal dynamics on gasket fractal

We considered a Bak-Sneppen model on a Sierpinski gasket fractal. We calculated the avalanche size distribution and the distribution of distances between subsequent minimal sites. To observe the temporal correlations of the avalanche, we estimated the return time distribution, the first-return time, and the all-return time distribution. The avalanche size distribution follows the power law, P(s)∼s−τ, with the exponent τ=1.004(7). The distribution of jumping sites also follows the power law, P(r)∼r−π, with the critical exponent π=4.12(4). We observe the periodic oscillation of the distribution of the jumping distances which originated from the jumps of the level when the minimal site crosses the stage of the fractal. The first-return time distribution shows the power law, Pf(t)∼t−τf, with the critical exponent τf=1.418(7). The all-return time distribution is also characterized by the power law, Pa(t)∼t−τa, with the exponent τa=0.522(4). The exponents of the return time satisfy the scaling relation τf+τa=2 for τf?2.     

Sound modes in holographic hydrodynamics for charged AdS black hole

In the previous paper we studied the transport coefficients of quark–gluon plasma in finite temperature and finite density in vector and tensor modes. In this paper, we extend it to the scalar modes. We work out the decoupling problem and hydrodynamic analysis for the sound mode in charged AdS black hole and calculate the sound velocity, the charge susceptibility and the electrical conductivity. We find that Einstein relation among the conductivity, the diffusion constant and the susceptibility holds exactly.     

Q-switched neodymium-doped Y3Al5O12-based silica fiber laser

We present pulsed laser operation in a Nd-doped, Y3Al5O12-based silica fiber. The fiber was fabricated using the rod-in-tube technique with a Nd:YAG crystal rod as the core material and a silica tube for the cladding material. A spectroscopy study revealed that the core region had become amorphous in the process of fiber drawing. Q-switched pulsed laser operation was realized at a wavelength of 1058 nm when the fiber was cladding pumped at a wavelength of 808 nm. The laser delivered 38 μJ of energy in 65 ns pulses. The extracted energy was limited due to the multimodal operation of the fiber. Laser slope efficiency in continuous wave operation reached 52%. The spectroscopic properties of the fabricated fiber are discussed and compared to a Nd:YAG crystal and a Nd:Al-doped silica fiber.     

Self-limited growth of the CaF nanowire on the Si(5 5 12)-2 × 1 template

The atomic structure and interfacial bonding of the ordered-and-isolated CaF nanowires on Si(5 5 12)-2 × 1 have been disclosed by scanning tunneling microscopy and synchrotron photoemission spectroscopy. Initially, CaF molecules dissociated from thermally deposited CaF₂ molecules are adsorbed preferentially on the chain structures of Si(5 5 12)-2 × 1 held at 500 °C. With increasing CaF₂ deposition amount, one-dimensional (1D) CaF nanowires composed of (113) and (111) facets are formed. The line density of these CaF nanowires increases as a function of deposition amount. Finally, at a submonolayer coverage, the surface is saturated with these 1D nanowires except for the (225) subunit, while the original period of Si(5 5 12)-2 × 1, 5.35 nm, is preserved. It has been deduced by the present studies that, owing to these preferential adsorption of CaF and facet-dependent growth of a CaF layer within a unit periodic length of Si(5 5 12)-2 × 1, such a self-limited growth of the CaF nanowire with a high aspect ratio becomes possible.     

Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices

This article reviews the current status of high-density capacitor for volatile memory devices. The dielectric properties for both the Ta₂O₅ film and the (Ba, Sr)TiO₃ (BST) dielectric materials using either the metal organic chemical vapor deposition (MOCVD) or the atomic layer deposition (ALD) are reviewed briefly. New challenges of dielectric material for the next generation, and serious problems emerged during integration to date using Ta₂O₅ and BST. The material characteristics of many electrode materials for the high dielectric materials are introduced. We present the basic properties and integration issued for MOCVD-ruthenium (Ru). The second part of this review summarized the failure mechanisms from barrier properties of previously reported diffusion barriers and emphasizes new design concepts of diffusion barrier for high-density memory devices. Finally, the future direction for a diffusion barrier to advance high-density memory capacitors is suggested.     

The nonlinear optical properties of a magneto-exciton in a strained Ga0.2In0.sAs/GaAs quantum dot

The magnetic field-dependent heavy hole excitonic states in a strained Gao.2Ino.sAs/GaAs quantum dot are investi- gated by taking into account the anisotropy, non-parabolicity of the conduction band, and the geometrical confinement. The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured. The interband optical transition energy as a function of geometrical confinement is computed in the presence of a mag- netic field. The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied. The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Gao.2Ino.sAs/GaAs quantum dot. Heavy hole excitonic absorption spectra, the changes in refractive index, and the third-order susceptibility of third-order harmonic generation are investigated in the Gao.2Ino.8As/GaAs quantum dot. The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system.     

Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering

We grew heterojunction light emitting diode (LED) structures with various n-type semiconducting layers by magnetron sputtering on p-type GaN at high temperature. Because the undoped ZnO used as an active layer was grown under oxygen rich atmosphere, all LED devices showed the EL characteristics corresponding to orange-red wavelength due to high density of oxygen interstitial, which was coincident with the deep level photoluminescence emission of undoped ZnO. The use of the Ga doped layers as a top layer provided the sufficient electron carriers to active region and resulted in the intense EL emission. The LED sample with small quantity of Mg incorporated in MgZnO as an n-type top layer showed more intense emission than the LED with ZnO, in spite of the deteriorated electrical and structural properties of the MgZnO film. This might be due to the improvement of output extraction efficiency induced by rough surface.