Microtextures Induced by Nanosecond Laser on Ni–Co Alloy Coatings

Ni–Co alloys have a wide range of applications in various fields owning to their excellent physical, chemical, and mechanical properties. In this paper, we prepare Ni–Co alloy coatings on 316L stain steel surfaces by electroplating. We present a novel approach utilizing a nanosecond laser to induce microtextures on Ni–Co alloy coatings. We study experimentally the effects of laser power and scanning rate on the surface morphologies of Ni–Co alloy coatings. The results indicate that the shape and size of induced microtextures can be controlled by the laser power and scanning rate. The size of grains increases with increase in the work current of the laser (WCL) at a certain scanning rate. With the WCL constant, the size of grains decreases with increase in scanning rate while their average height increases. It is a simple and easily-controlled method for the fabrication of microstructures on Ni–Co alloy coatings, which has promising applications in investigations of the properties of microtextured surfaces, such as friction, adhesion, and wetting.     

On the output function in a Ginsburg’s machine

We give the form of the output function in Ginsburg’s machine in which the input and output dictionaries are abelian groups and the transition function is of a special form.     

Highly Luminescent Red Phosphorescent OLED with Interfacial Layers for Hole Transport and Electron Injection

Four kinds of red phosphorescent organic light-emitting devices were fabricated and compared to investigate the effect of interfacial layers for hole transport and electron injection. 1 nm-thick LiF in the device A and C and 1 nm-thick Cs₂CO₃ in the device B and D were deposited as an electron injection layer between the anode and the electron transport layer, and 5 nm-thick layer of dipyrazion[2,3-f:2′,2′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile[HATCN] was inserted as a hole transport interfacial layer between the hole injection layer and the hole transport layer only in the device C and D. Under a luminance of 1000 cd/m², the power efficiencies were 7.6 lm/W and 8.5 lm/W in the device A and B, and 8.6 lm/W and 13.4 lm/W in the device C and D. The quantum efficiency of the device D was 15.8% under 1000 cd/m² which was somewhat lower than those of the device A and C, but a little higher than that of the device B. The luminance of the device D was much higher than those of the other devices at a given votage. The luminance of the device D at 7 V was 23,710 cd/m², which was 13.0, 3.4, and 4.0 times higher than those of the device A, B, and C at the same voltage, respectively.