Correlation between fluorescence intermittency and spectral diffusion in single semiconductor quantum dots

We find a correlation between the dynamics of fluorescence intermittency and spectral diffusion in the spectroscopy of single CdSe nanocrystal quantum dots (QD). A statistical analysis of the data suggests two populations of blinking events: blinking followed by large spectral diffusion shifts and blinking with small or no spectral shifts. Although unexpected from earlier studies, the correlation between blinking and spectral shifting is consistent with a model of QD ionization as the mechanism for the blinking event, followed by a redistribution of local electric fields that results in spectral shifting.     

Operational features and microwave characteristics of the VircatorII experiment

The Vircator II oscillating virtual-cathode microwave source operates with diode voltages between 600 and 800 kV and diode current between 50 and 120 kA. Maximal microwave output power between 200 and 500 MW is achieved when the diode aspect ratio, cathode surface, charge voltage, and extraction coupling are arranged to simultaneously (1) maximize diode voltage, (2) satisfy magnetic insulation criteria, (3) avoid nonuniform or unstable electron emission, and (4) optimize microwave transmission from the virtual cathode to the launching antenna. Broadband radiation between 0.4 and 5.5 GHz is generated. The central frequency follows the beam plasma frequency. It is tuned by varying the current density with anode-cathode gap adjustments     

Chemical and Electrochemical Lithiation of van der Waals Tetrel-Arsenides

Lithiation of van der Waals tetrel-arsenides, GeAs and SiAs, has been investigated. Electrochemical lithiation demonstrated large initial capacities of over 950 mAh g⁻¹ accompanied by rapid fading over successive cycling in the voltage range 0.01–2 V. Limiting the voltage range to 0.5–2 V achieved more stable cycling, which was attributed to the intercalation process with lower capacities. Ex situ powder X-ray diffraction confirmed complete amorphization of the samples after lithiation, as well as recrystallization of the binary tetrel-arsenide phases after full delithiation in the voltage range 0.5–2 V. Solid-state synthetic methods produce layered phases, in which Si-As or Ge-As layers are separated by Li cations. The first layered compounds in the corresponding ternary systems were discovered, Li_0.9Ge_2.9As_3.1 and Li₃Si₇As₈, which crystallize in the Pbam (No. 55) and P2/m (No. 10) space groups, respectively. Semiconducting layered GeAs and SiAs accommodate the extra charge from Li cations through structural rearrangement in the Si-As or Ge-As layers and eventually by replacement of the tetrel dumbbells with sets of Li atoms. Ge and Si monoarsenides demonstrated high structural flexibility and a mild ability for reversible lithiation.     

Optical rectification coefficient in an oxide quantum dot with different confinement potentials

Exciton binding energies, oscillator strength, optical rectification coefficients and second harmonic generation are investigated using three different confinement potentials in a CdO/ZnO core/shell quantum dot. The bare potential, Smorodinsky–Winternitz potential and Woods–Saxon potential are employed in the Hamiltonian. The position dependent dielectric function is used. The electronic properties are found using variational formulism within a single band effective mass approximation whereas the optic properties are investigated using compact density matrix approach. The results show that different confinement potentials lead to significant changes in the coefficients of optical rectification and the second harmonic generations and the effects of confined potentials are more pronounced in the strong confinement region. The resonant peaks in the nonlinear optical rectification coefficients and second harmonic generation are blue shifted to larger photon energies with the various confined potentials and the results are enhanced using Smorodinsky–Winternitz potential. The obtained results can be applied for the potential applications for fabricating opto-electronic devices.     

Ultrasonic detection of the pinning of dislocations by point defects in lead—II. Model for dislocation defect interaction

Experiments are presented to establish that irradiation produced defects in lead not only pin dislocations but also can be trapped at the ends of dislocation lines in agreement with the model proposed by Thompson, Buck, Huntington and Barnes. This model indicates that there is a temperature T^* at which there is a maximum pinning of dislocations. T^* is found to be near 140 K. The data of Part I are analyzed according to this model using reasonable values of the dislocation density and the binding energy of the defect in the trap. The resulting activation energy for the region A process in the reaction kinetics model is found to be 0.15 eV which is consistent with the value found from an eigenvalue expansion model.     

Surface-enhanced emission from single semiconductor nanocrystals

The fluorescence behavior of single CdSe(ZnS) core-shell nanocrystal (NC) quantum dots is dramatically affected by electromagnetic interactions with a rough metal film. Observed changes include a fivefold increase in the observed fluorescence intensity of single NCs, a striking reduction in their fluorescence blinking behavior, complete conversion of the emission polarization to linear, and single NC exciton lifetimes that are >10(3) times faster. The enhanced excited state decay process for NCs coupled to rough metal substrates effectively competes with the Auger relaxation process, allowing us to observe both charged and neutral exciton emission from these NC quantum dots.     

Scanning transmission X‐ray microscopy probe for in situ mechanism study of graphene‐oxide‐based resistive random access memory

Here, an in situ probe for scanning transmission X‐ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K‐ and O K‐edges, both the RRAM junctions and the I₀ junction were fabricated on a single Si₃N₄ membrane to obtain local XANES spectra at these absorption edges with more delicate I₀ normalization. Using this probe combined with the synchrotron‐based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K‐edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.     

Low-dimension self-interstitial diffusion in α-Zr

The mobility of self-interstitials in α-zirconium (α-Zr) is studied with molecular dynamic (MD) and molecular static (MS) simulations, using Ackland’s many-body inter-atomic potential. The basal crowdion configuration is found to be the ground state. Four types of diffusion jumps can be identified via MS, in-plane in-line, in-plane off-line, out-of-plane in-line and out-of-plane off-line. The in-plane migration is dominated by one-dimensional crowdion motion along the [110] directions, interrupted from time to time by off-line or out-of-plane jumps. Based on the MS results, the activation energies and pre-exponentials for the diffusion processes are determined by fits to the Arrhenius plots of D_c and D_a. The diffusional anisotropy factor D_c/D_a is also obtained, and compares well with experimental results. The mean frequency of each type of jumps is then found using Monte Carlo simulation, and is reported as a function of temperature. The mean lifetime and mean free path of the one-dimensional mobility are then obtained. The 1-D mean free path is found to be unimportant for sink separations involved under the usual irradiation damage conditions. Received: 4 March 2002 / Accepted: 4 April 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. E-mail: Chung.Woo@polyu.edu.hk     

Improved dimensional stability of Nafion membrane modified using a layer by layer self-assembly of biophilic polymers

The modification of perfluorinated proton exchange membranes (e.g. Nafion) utilizing a layer by layer (LbL) electrostatic assembly of oppositely charged biophilic polymers such as poly-l-lysine as positive layer and dsDNA as a negative layer is developed to protect the interface between the catalyst layer and the membrane in a low temperature fuel cell. Various physicochemical measurements including water uptake, proton conductivity and surface tension were investigated for both the as-received Nafion and the biopolymeric LbL modified Nafion. The smaller water contact angle and the less swelling characteristics of the biopolymer modified Nafion membrane was founded compared to that of as-received Nafion. This clearly indicates that the more hydrophilic surface of biopolymeric layers on Nafion plays an important role in the enhanced dimensional stability. In addition, a potential hypothesis explaining the higher proton conductivity from the LbL biopolymeric film coated Nafion is suggested.