Construction of inclusions with vanishing generalized polarization tensors by imperfect interfaces

We investigate the problem of planar conductivity inclusion with imperfect interface conditions. We assume that the inclusion is simply connected. The presence of the inclusion causes a perturbation in the incident background field. This perturbation admits a multipole expansion of which coefficients we call as the generalized polarization tensors (GPTs), extending the previous terminology for inclusions with perfect interfaces. We derive explicit matrix expressions for the GPTs in terms of the incident field, material parameters, and geometry of the inclusion. As an application, we construct GPT-vanishing structures of general shape that result in negligible perturbations for all uniform incident fields. The structure consists of a simply connected core with an imperfect interface. We provide numerical examples of GPT-vanishing structures obtained by our proposed scheme.     

Some New Features in the Pseudoscalar Meson and Vector Meson Photoproductions

We investigate the role of the t-channel meson exchange in various photoproduction processes to discuss features of the respective production mechanism. For the less model-dependent analysis we work with the t-channel meson pole reggeized in the Born approximation amplitude. With the meson–baryon coupling constants chosen consistently with symmetry prediction we show that the Reggeized pole model could reproduce the experimental data to a good degree in the lower energy region. Numerical consequences show the significance of the tensor meson exchange in the γ p → K ⁺Λ, the dominance of the pseudoscalar meson exchange in the πΔ (and KΣ*) processes, and the sizable role of the vector-meson magnetic moment in the charged ρ (and K*) photoproductions, respectively. These new features from the present analyses could provide a useful guide for future study of the N* resonances in the low energy region.     

Electron-beam deposition of vanadium dioxide thin films

Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass.     

Measurement of branching fractions for B-->eta(c)K(*) decays

We report measurements of branching fractions for charged and neutral B-->eta(c)K decays where the eta(c) meson is reconstructed in the K(0)(S)K+/-pi(-/+), K+K-pi(0), K(*0)K-pi(+), and pp; decay channels. The neutral B0 channel is a CP eigenstate and can be used to measure the CP violation parameter sin(2phi(1). We also report the first observation of the B0-->eta(c)K(*0) mode. The results are based on an analysis of 29.1 fb(-1) of data collected by the Belle detector at KEKB.     

Synthesis and characterization of Ni magnetic nanoparticles in AlMCM41 host

Superparamagnetic nickel nanoparticles were prepared by incorporating nickel ion into AlMCM41 as a nanoreactor and then reduced with sodium borohydride or H₂ gas. Products were characterized by elemental analysis, transmission electron microscopy, X-ray powder diffraction, and magnetic susceptibility. The nickel particle size and blocking temperature depend on the reduction method.     

Spin-Hall effect: Back to the beginning at a higher level

The phenomena of the spin-Hall effect, initially proposed over three decades ago in the context of asymmetric Mott skew scattering, was revived recently by the proposal of a possible intrinsic spin-Hall effect originating from a strongly spin-orbit coupled band structures. This new proposal has generated an extensive debate and controversy over the past 2 years. On August 2006 the first workshop on the spin-Hall effect was held at the Asian Pacific Center for Theoretical Physics. Its purpose was to bring together many of the leading groups in this field to resolve such issues and identify future challenges. We offer this short summary to clarify formerly controversial issues now settled and help refocus the research efforts in new and important avenues.     

The magnetic properties of Be-codoped GaMnN grown via molecular beam epitaxy

GaMnN and Be-codoped GaMnN were grown via molecular beam epitaxy using a single GaN precursor and their structural and magnetic properties were examined. X-ray diffraction and superconducting quantum interference device (SQUID) measurements revealed that the grown layers are homogeneous without precipitates. The saturation magnetization of GaMnN has increased from ∼4 to ∼16 emu/cm³ via codoping of Be. The d–d exchange interaction between Mn atoms was discussed for the ferromagnetism of GaMnN.     

Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation.