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101.
102.
The occurrence and formation of black spots areas in PolyLED devices has been studied by time-of-flight SIMS (TOFSIMS). The composition, shape and position of the black spots is visualised by three-dimensional (3D)-TOFSIMS depth-profiling. It has been established that the formation of non-emissive spots is due to the growth of aluminium oxide clusters at the AlBa/polymer interface. Electron injection in the black spots is lost by the resulting local increase of the resistivity of the cathode. 相似文献
103.
W. Kappus 《Zeitschrift für Physik B Condensed Matter》1981,45(2):113-121
A model concerning adatom structures is proposed. Attractive nearest neighbour interactions, which may be of electronic nature lead to 2-dimensional condensation. Every pair bond causes and elastic dipole. The elastic dipoles interact via substrate strains with an anisotropics
–3 power law. Different types of adatoms or sites are permitted and many-body effects result, from the assumptions. Electric dipole interactions of adatoms are included for comparison. The model is applied to the W(110) surface and compared with superstructures experimentally found in the W(110)-0 system. It is found that there is still lack for an additional next-nearest neighbour interaction. 相似文献
104.
The timing relationship between a synchronously pumped mode-locked dye laser and its pump laser is explored experimentally and theoretically. The experimental data is in quantitative agreement with numerical solutions of a semiclassical model that includes no free parameters. The data also agrees qualitatively with an approximate, analytic distillation of this model which is presented here for the first time. Our study has a direct bearing on the jitter and the long term stability of these important ultrashort pulse lasers. 相似文献
105.
106.
An applied cell mapping method for optimal control problems 总被引:1,自引:0,他引:1
W. H. Zhu 《Journal of Optimization Theory and Applications》1989,60(3):485-500
From the application point of view, a series of modifications are proposed for the cell mapping method discussed in Ref. 1 for the optimal control analysis of dynamical systems. The cell order around the target set is rearranged. A set of common discriminate principles is used for the selection of the optimal one among competing control strategies of the same cost. Inequality constraints of the system are taken into account. The number of elements in the set of allowable time intervals is not prescribed, but left open. These modifications seem to make the cell mapping method more efficient for analyzing feedback systems and for obtaining their global optimal control information. The algorithms presented in this paper could broaden the application of the cell mapping approach of Ref. 1 to a wider class of engineering problems. 相似文献
107.
Summary In this paper a Gauss-Jordan algorithm with column interchanges is presented and analysed. We show that, in contrast with Gaussian elimination, the Gauss-Jordan algorithm has essentially differing properties when using column interchanges instead of row interchanges for improving the numerical stability. For solutions obtained by Gauss-Jordan with column interchanges, a more satisfactory bound for the residual norm can be given. The analysis gives theoretical evidence that the algorithm yields numerical solutions as good as those obtained by Gaussian elimination and that, in most practical situations, the residuals are equally small. This is confirmed by numerical experiments. Moreover, timing experiments on a Cyber 205 vector computer show that the algorithm presented has good vectorisation properties. 相似文献
108.
Vijaya Gracias Alan F. Gasiecki Joel D. Moore Irini Akritopoulou-Zanze Stevan W. Djuric 《Tetrahedron letters》2006,47(50):8977-8980
A general method for the preparation of diaza-spirocycles is reported. This method used an olefin metathesis in order to construct the desired spirocyclic framework. Beginning with commercially available protected amino ketones, this strategy ultimately produced pharmacologically relevant diaza-scaffolds in an efficient and high-yielding process. 相似文献
109.
Aspects of Generic Entanglement 总被引:4,自引:4,他引:0
Patrick Hayden Debbie W. Leung Andreas Winter 《Communications in Mathematical Physics》2006,265(1):95-117
We study entanglement and other correlation properties of random states in high-dimensional bipartite systems. These correlations
are quantified by parameters that are subject to the ``concentration of measure' phenomenon, meaning that on a large-probability
set these parameters are close to their expectation. For the entropy of entanglement, this has the counterintuitive consequence
that there exist large subspaces in which all pure states are close to maximally entangled. This, in turn, implies the existence
of mixed states with entanglement of formation near that of a maximally entangled state, but with negligible quantum mutual
information and, therefore, negligible distillable entanglement, secret key, and common randomness. It also implies a very
strong locking effect for the entanglement of formation: its value can jump from maximal to near zero by tracing over a number
of qubits negligible compared to the size of the total system. Furthermore, such properties are generic. Similar phenomena
are observed for random multiparty states, leading us to speculate on the possibility that the theory of entanglement is much
simplified when restricted to asymptotically generic states. Further consequences of our results include a complete derandomization
of the protocol for universal superdense coding of quantum states. 相似文献
110.
Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation. 相似文献