A study of the Immune Epitope Database for some fungi species using network topological indices

In the last years, the encryption of system structure information with different network topological indices has been a very active field of research. In the present study, we assembled for the first time a complex network using data obtained from the Immune Epitope Database for fungi species, and we then considered the general topology, the node degree distribution, and the local structure of this network. We also calculated eight node centrality measures for the observed network and compared it with three theoretical models. In view of the results obtained, we may expect that the present approach can become a valuable tool to explore the complexity of this database, as well as for the storage, manipulation, comparison, and retrieval of information contained therein.     

Modelling of hundreds of wavelength long,highly resonant, 3D subwavelength patterned scattering structures

In this paper, we study the performances of the Dipole Discrete Approximation method for modelling the reflectivity of a highly resonant, 3D subwavelength patterned structure extending over tens of thousands wavelength square. The computation time of the whole reflectivity spectrum (80 wavelengths) was about 3 h on a computer and requires about 1.5 GB in memory. These performances make the DDA an unique numerical tool for modelling the scattering by large 3D structures supporting long-range interactions.     

A 3D-CMOS compatible silicon photo-sensor with a large vertical photosensitive area

This paper introduces design and simulation of a three-dimensional complementary metal–oxide–semiconductor CMOS compatible photo-sensor based on a silicon substrate. In the structure of photo-sensor, a vertical n+/p junction as a photosensitive area is formed on one side of a U-groove, and perpendicular to a lateral n-i-p structure on top-side of the silicon surface. This configuration enables a direct butt-coupling of a fiber-optic to the photosensitive area, which is a privilege for many remote monitoring applications. The device analysis is carried out by a two-dimensional simulation using SILVACO TCAD simulator. The thickness of the photo-sensitive area is investigated by considering the figures of merit for the two different thicknesses of 30 and 50 µm. The simulated results (according to the parameters defined for the Si substrate) show a very low dark current of 70 and 100 (fA/μm) for the 30 and 50 µm thicknesses, respectively. In addition, a high photo-current to dark current ratio of ~3000 is achieved under an intensity of 2 mW/cm² at 633 nm wavelength, according to the wavelength of red He–Ne laser. The sensor demonstrates a responsivity of 0.33 A/W corresponding to 65% external quantum efficiency and a ?3 dB frequency response of 0.2 GHz under a small signal of 2 mW/cm² at 633 nm wavelength for 10 V reverse bias.     

Optical image asymmetric cryptosystem using fingerprint based on iterative fraction Fourier transform

A novel asymmetric cryptosystem for optical image is proposed using fingerprint based on iterative fractional Fourier transform. To enhance the security, a hyperchaotic phase generated by a 4D Lorenz system is considered as the public key in the proposed encryption system, while the private key is emerged by the retrieved phase and fingerprint. In the encryption process, the secret information is hid into the hyperchaotic phase. Subsequently, the private key can be obtained by a reversible operation. To decrypt the original image, the ciphertext and private key are imported into the input plane of fractional Fourier system. This system is also applicable for information authentication because the fingerprint is used both in encryption and decryption approach. Some numerical simulations have been done to test the validity and capability of the encryption system.     

A high efficient antireflective down-conversion Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Bi<Superscript>3+</Superscript>, Yb<Superscript>3+</Superscript> thin films

The high efficient antireflective down-conversion Y₂O₃:Bi, Yb films have been prepared successfully on Si(100) substrates by pulsed laser deposition (PLD) method, Upon excitation of ultraviolet photon varying from 300 to 400 nm, near-infrared emission of Yb³⁺ was observed for the film, can be efficiently absorbed by silicon (Si) solar cell. Most interestingly, there is a very low average reflectivity 1.46% for the incident light from 300 to 1100 nm. To the best of our knowledge, this is the lowest reflectance for the down-conversion thin films prepared by cost efficient method. The surface topography of the high efficient antireflective films can be controllably tuned through the substrate template regulation by optimizing process parameters. Besides, the results showed that there is a close relationship between luminescent property and morphology of the film. With the change of the surface morphology, the intensity of Bi³⁺ and Yb³⁺ emission peaks increase first and then decrease. The obtained results demonstrate that this film can enhance the Si solar cell efficiency through light trapping and spectrum shifting.     

Design of full-duplex and multifunction bidirectional CMOS transceiver for optical interconnect applications

This work presents a full-duplex and multifunction bidirectional transceiver for optical interconnect application. The transceiver utilizes a common limiting amplifier/gain stage, thus reducing total chip area and total power consumption. While providing a full-duplex bidirectional transmission with the aid of a hybrid circuit between the electrical input/output (I/O) and the optoelectronic signals from the transmitter and receiver circuits, it also allows for a half-duplex operation with the aid of a switch between the transimpedance amplifier signals and the transmitter electrical input from the I/O port. The multifunction bidirectional CMOS transceiver is designed in a 0.13 µm Si-CMOS technology, with power dissipation of 79 and 54.4 mW for the transmitter and receiver, respectively. It shows a 3-dB bandwidth of 5.58 and 5.69 GHz for the transmitter and the receiver respectively and with a 3-dB gain of 66.14 and 69.6 dB, in full-duplex mode. The transceiver operates up to 7 Gb/s in full-duplex mode.     

Study on optical and electrical properties of gold-doped silicon fabricated by femtosecond laser

Microstructured silicon (Si) materials have been fabricated by femtosecond (fs) laser ablation and have been hyperdoped with gold (Au) impurities. The ablated Si materials showed large and thermostable infrared absorption at 1.1–2.5 μm wavelengths, which was contributed by sub-band absorption and laser-induced defects absorption. The Au–Si alloy was formed after laser irradiation onto the Au-coated Si surface, which was determined by XRD characterization. Using N-type Si substrate, the fabricated Au-doped Si performed lower sheet carrier density due to the self-compensation effect between deep donor and acceptor energy lever of Au in bulk Si material. From Hall measurement, both the p- and n- types of Au-doped Si samples can be obtained by controlling the type of Si substrate.     

Terahertz artificial dielectric cuboid lens on substrate for super-resolution images

This paper presents an investigation of terajets formation by dielectric periodic structure at terahertz frequencies (0.1–0.2 THz) in effective medium regime (photonic metamaterial). The dispersions of effective permittivity for periodic structures formed by plastics (ABS, black) were analytically obtained for both regimes. The study of the interaction of a plane wave and artificial cubic dielectric on a substrate parallelepiped to form a subwavelength terahertz beams (terajet) was performed. The results of numerical simulation of S-parameters of structure are discussed. The subwavelength beam waist of terajets about 0.39λ–0.41λ were obtained. The quality factor of terajets are discussed. The results may be applied for creation of methods to obtain subwavelength beams in the terahertz frequency range, and devices based on them. These investigations are opening new research lines such as mesoscale focusing devices for different sensing applications.     

Quantum information-holding single-photon router based on spontaneous emission

In this paper, we propose a single-photon router via the use of a four-level atom system coupled with two one-dimensional coupled-resonator waveguides. A single photon can be directed from one quantum channel into another by atomic spontaneous emission. The coherent resonance and the photonic bound states lead to the perfect reflection appearing in the incident channel. The fidelity of the atom is related to the magnitude of the coupling strength and can reach unit when the coupling strength matches g _a = g _b . This shows that the transfer of a single photon into another quantum channel has no influence on the fidelity at special points.