空气/水界面水分子的取向和运动

对四种不同的实验构型下空气／水界面自由O-H键在3700cm~(-1)的和频振动光谱的分析表明,水分子在空气／水界面的取向运动只可能是在平衡位置附近有限角度之内的受限转动。界面水分子的自由O-H键取向距界面法线约33°,而取向分布或运动的宽度不超过15°。这一图像显著地不同于Wei等人(Phys. Rev. Lett.86,4799(2001))只通过单一的SFG实验构型所得出结论,即：空气／水界面的水分子在超快的振动弛豫时间内在很大的角度范围内运动。     

提高微晶硅薄膜太阳电池效率的研究

采用甚高频等离子体增强化学气相沉积技术制备了系列微晶硅薄膜太阳电池，指出了气体总流量和背反射电极的类型对电池性能参数的影响.电池的I-V测试结果表明：随反应气体总流量的增加，对应电池的短路电流密度、开路电压和填充因子都有很大程度的提高，结果使得电池的光电转换效率得以提高.另外，ZnO/Ag/Al背反射电极能明显提高电池的短路电流密度，进而也提高了电池的光电转换效率.对气体总流量和背反射电极类型影响电池效率的原因进行了分析. 关键词： 微晶硅薄膜太阳电池 气体流量 ZnO/Ag/Al背反射电极     

T-型树谱唯一性的一个简单刻画

图G称为谱唯一的,如果任何与G谱相同的图一定与G同构.一棵树称为T-型树如果其仅有一个最大度为3的顶点.本文给出了T-型树谱唯一性的一个简单刻画,从而完全解决了T-型树的谱唯一性问题.     

直径对脉冲爆震发动机性能的影响

本文通过实验研究了脉冲爆震发动机的直径对其性能的影响．实验结果表明；当爆震室的直径增大时，爆震波压力波形相似，平均峰值压力比较接近，且比冲基本保持不变，而推力则随爆震室直径的增大而增大。实验曲线表明爆震室内的流动具有自相似性，从而为建立尺寸律提供了实验依据．本文中比冲和平均推力是利用摆动原理测量的，并与由作用在推力壁上的压力计算得出的比冲和平均推力的理论值和实验值进行了比较，结果基本吻合，说明该测量方法可行．     

Relationship between chemical bond parameters and superconducting temperature in HgBa2Can−1CunO2n+2+δ (n=1, 2, 3, 4)

Bond covalency and valence of elements in HgBa₂Ca_n−1Cu_nO_2n+2+δ (n=1, 2, 3, 4) were calculated and their relationship with T_c was discussed. For both oxygen and argon annealed samples, the results indicated that with the increase of n, the trend of bond covalency of Hg-O and Cu-O was the same or opposite compared with that of superconducting temperature. This may suggest that the magnitudes of Cu-O and Hg-O bond covalency are important in governing the superconducting temperature. For the highest T_c sample, Hg had the lowest valence, implying that lower valence of Hg was preferred in order to produce higher T_c. For fixed n, the valence of Cu in oxygen annealed samples was larger than that in argon annealed samples, indicating that oxygen annealed samples produced more carriers than argon annealed samples.     

AERODYNAMIC DAMPING OF RANDOMLY EXCITED PLATES IN STATIONARY AND MOVING AIR

An experimental study of the aerodynamic damping of oscillating plates has been undertaken. Plates of various shapes were placed into an air flow normal to the plate and excited to oscillate parallel to the flow direction by electromagnetic forces of equal amplitudes and random frequencies. The aerodynamic damping of oscillating plates, evaluated in terms of a quality Q-factor from a frequency response resonance curve, was found to vary linearly with the absolute pressure in stationary surrounding air and with the air flow velocity in moving air. The flow velocity was also found to affect the aerodynamic damping more than the absolute pressure. A simple empirical model has been developed to predict the variation of the aerodynamic damping with the flow velocity.     

High-temperature expansions to fifteenth order

High-temperature series expansions of the susceptibility and second moment to 15th order are calculated for zero external field on the linear chain (LC), plane square (PSQ), simple cubic (SC), and body-centered cubic (BCC) lattices. Checks for specific models against pertinent work in the literature are detailed.     

A Modified Quasi-Newton Method for Structured Optimization with Partial Information on the Hessian

This paper develops a modified quasi-Newton method for structured unconstrained optimization with partial information on the Hessian, based on a better approximation to the Hessian in current search direction. The new approximation is decided by both function values and gradients at the last two iterations unlike the original one which only uses the gradients at the last two iterations. The modified method owns local and superlinear convergence. Numerical experiments show that the proposed method is encouraging comparing with the methods proposed in [4] for structured unconstrained optimization Presented at the 6th International Conference on Optimization: Techniques and Applications, Ballarat, Australia, December 9–11, 2004     

Illumination dependence of I-V and C-V characterization of Au/InSb/InP(1 0 0) Schottky structure

The effects of surface preparation and illumination on electric parameters of Au/InSb/InP(100) Schottky diode were investigated, in the later diode InSb forms a fine restructuration layer allowing to block In atoms migration to surface. In order to study the electric characteristics under illumination, we make use of an He-Ne laser of 1 mW power and 632.8 nm wavelength. The current-voltage I(V_G), the capacitance-voltage C(V_G) measurements were plotted and analysed. The saturation current I_s, the serial resistance R_s and the mean ideality factor n are, respectively, equal to 2.03 × 10⁻⁵ A, 85 Ω, 1.7 under dark and to 3.97 × 10⁻⁵ A, 67 Ω, 1.59 under illumination. The analysis of I(V_G) and C(V_G) characteristics allows us to determine the mean interfacial state density N_ss and the transmission coefficient θ_n equal, respectively, to 4.33 × 10¹² eV⁻¹ cm⁻², 4.08 × 10⁻³ under dark and 3.79 × 10¹² eV⁻¹ cm⁻² and 5.65 × 10⁻³ under illumination. The deep discrete donor levels presence in the semiconductor bulk under dark and under illumination are responsible for the non-linearity of the C⁻²(V_G) characteristic.     

The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO₃ (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively. Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002