纳米MOSFET迁移率解析模型

从玻尔兹曼方程出发，重新计算了纳米MOSFET沟道内的载流子所服从的分布函数，特别是考虑了纳米MOSFET横向电场和纵向电场之间的相互作用，并且以得到的非平衡状态下的分布函数为基础，考虑载流子寿命和速度的统计分布，给出了纳米MOSFET载流子迁移率的解析表达式.通过与数值模拟结果进行比较和分析，该迁移率解析模型形式简洁、物理概念清晰，且具有相当精度. 关键词： 玻尔兹曼方程 纳米MOSFET 迁移率 沟道有效电场     

不连续不可逆二维映象的动力学特性

总结两个保守映象不可逆地分段连续链接(称为类耗散系统)以及一个保守映象与一个耗散映象不可逆地分段连续链接(称为半耗散系统)情况下得到的五项共同动力学特征：不连续边界象集构成的随机网成为唯一的混沌轨道；由于某些相点具有两个逆象而导致的相空间塌缩(类耗散)；由于系统的不连续不可逆性质而出现的胖分形禁区网；在具有吸引子共存时占据不连续边界象集随机网和胖分形禁区网区域的点滴状吸引域以及由此导致的吸引子不可预言性；即使在传统强耗散存在的情况下点滴状吸引域仍由类耗散机制主宰.以一个累积-触发电路为例，说明这五项系统动 关键词： 随机网 禁区网 点滴状吸引域     

基于同步辐射加速器的康普顿背散射γ射线源(Ⅰ)产生MeV量级γ光子的数值计算

提出在筹建的上海同步辐射装置上建造一条MeV量级γ射线束及应用站,采用μm波长的红外(或远红外)激光与储存环中3.5GeV电子束进行康普顿背散射,从而获得能区为1—25MeV的康普顿背散射γ光子束,该光子束具有高强度、高极化度(线和圆极化)、准单色、方向性好的优点,可以广泛地应用于核物理和核天体物理基础研究及相关的应用研究领域.介绍了康普顿背散射的基本原理,并结合储存环参数给出了光子束性能的数值计算结果.     

Kolmogorov Width of Classes of Smooth Functions on the Sphere

Let ^d−1{(x₁,…,x_d) ^d:x²₁+···+x²_d=1} be the unit sphere of the d-dimensional Euclidean space ^d. For r>0, we denote by B^r_p (1p∞) the class of functions f on ^d−1 representable in the formwhere dσ(y) denotes the usual Lebesgue measure on ^d−1, and P^λ_k(t) is the ultraspherical polynomial.For 1p,q∞, the Kolmogorov N-width of B^r_p in L^q( ^d−1) is given bythe left-most infimum being taken over all N-dimensional subspaces X_N of L^q( ^d−1).The main result in this paper is that for r2(d−1)²,where A_NB_N means that there exists a positive constant C, independent of N, such that C⁻¹A_NB_NCA_N.This extends the well-known Kashin theorem on the asymptotic order of the Kolmogorov widths of the Sobolev class of the periodic functions.     

Single-mode rib polymer waveguides and electro-optic polymer waveguide switches

Mode-matching and effective index methods are used to analyze single-mode operation of optical rib polymer waveguides. Their single-mode waveguiding conditions are determined. Single-mode rib waveguides fabricated from guest–host polyetherketone are presented. The estimated propagation loss of straight rib-waveguides is 0.7 dB/cm at 1.55 μm. Furthermore, by using the mode field-transfer matrix method, 2×2 and 4×4 polymer Mach–Zehnder interference switch operating at 1.55 μm wavelength has been designed based on optical multi-mode interference.     

差分吸收光谱法测量大气痕量气体浓度误差分析及改善方法

差分吸收光谱技术(DOAS)中采用线性最小二乘拟合方法,用痕量气体标准差分吸收截面对测量得到的差分吸收光谱进行拟合,得出大气中痕量气体的浓度.计算结果的准确性不仅取决于光谱的测量精度,而且受标准差分吸收截面以及仪器函数和温度等诸多因素的影响.详细地分析了计算误差的产生原因,提出了用高浓度样品池得到标准吸收截面的方法,针对光谱固有结构,以及温度对标准吸收截面的影响,改进了浓度反演算法.大量的实验表明,综合运用上述方法,即便对低浓度的样气,相对测量误差也能降低到10%以下.     

On the stability of Riemannian manifold with parallel spinors

Inspired by the recent work [HHM03], we prove two stability results for compact Riemannian manifolds with nonzero parallel spinors. Our first result says that Ricci flat metrics which also admit nonzero parallel spinors are stable (in the direction of changes in conformal structures) as the critical points of the total scalar curvature functional. Our second result, which is a local version of the first one, shows that any metric of positive scalar curvature cannot lie too close to a metric with nonzero parallel spinor. We also prove a rigidity result for special holonomy metrics. In the case of SU(m) holonomy, the rigidity result implies that scalar flat deformations of Calabi-Yau metric must be Calabi-Yau. Finally we explore the connection with a positive mass theorem of [D03], which presents another approach to proving these stability and rigidity results. Dedicated to Jeff Cheeger for his sixtieth birthday     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.