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141.
通过运用1H-1H COSY(1H-1H COrrelation SpectroscopY)、TOCSY(TOtal Correlation SpectroscopY)、HSQC(Heteronuclear Single Quantum Correlation)、HMBC (Heteronuclear Multiple Bond Correlation)、NOESY(Nuclear Overhauser Enhancement SpectroscopY)等多种二维核磁技术,对盐酸氯丙嗪(Chlorpromazine hydrochloride CPZ· HCl)在CDCl3、CD3COCD3和D2O三种溶剂中的1H、13C NMR谱进行了准确归属(重点集中于谱峰重叠程度较高的芳香族区域).实验表明:杂环上N与苯环存在部分共轭;在CDCl3、CD3COCD3中,侧链卷曲至芳环上方处于屏蔽区,且侧链上N为较稳定的四面体构型;比较了CPZ· HCl在不同溶剂与浓度下的1H NMR谱的变化,对文献中其核磁共振谱(特别是芳香区的谱峰)归属的争议作了解释.量子化学计算结果与实验结果相吻合. 相似文献
142.
由于高能激光能量计标定过程中没有标准的能量测量装置和标准的激光源,无法采用常规方法对其进行标校。提出了一种利用现有小能量计从低到高逐级多次传递不确定度的方法,以及一种利用能量等效原理对激光能量计进行标校的方法。不确定度传递法方法简单,但环节较多导致不确定度较大。等效标定法包括电标法和光标法,电标法对设计要求较高,但求解过程相对简单。光标法工程实现难度要低得多,但必须事先对灯组余热及热损失进行测算。等效法的三个条件与误差大小关系紧密,在结构设计中必须严格考虑,它是提高测量准确性的根本,其次要尽量减少不确定度传递的中间环节,最后需要对误差项进行科学分析和测定,在此基础上对这些项进行相应的修正和补偿。 相似文献
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Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the [100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures. 相似文献
145.
We report the properties of a compact diode-pumped continuous-wave Nd:GdV04 laser with a linear cavity and different Nd-doped laser crystals. In a 0.2at.% Nd-doped Nd:GdVO4 laser, 1.54 W output laser power is achieved at 912nm wavelength with a slope efficiency of 24.8% at an absorbed pump power of 9.4W. With 0.3at.% Nd-doping concentration, we can obtain the either single-wavelength emission at 1064nm or 912nm or the dual-wavelength emission at 1064nm and 912nm by controlling the incident pump power. From an incident pump power of 11.6 W, the 1064nm emission between ^4Fa/2 and ^4I11/2 is suppressed completely by the 912nm emission between ^4Fa/2 and ^4I9/2. We obtain 670 mW output of the 912nm single-wavelength laser emission with a slope efficiency of 5.5% by taking an incident pump power of 18.4 W. Using a Nd:GdV04 laser with 0.4at.% Nd-doping concentration, we obtain either the single-wavelength emission at 1064nm or the dual-wavelength emission at both 1064nm and 912nm by increasing the incident pump power. We observe a strong competition process in the dualavelength laser. 相似文献
146.
Modulation Frequency Multiplexed Tunable Diode Laser Spectroscopy System for Simultaneous CO, CO2 Measurements 下载免费PDF全文
A modulation frequency multiplexed dual diode-laser system is developed for simultaneous detection of the two most common fire gas products CO and CO2. Simultaneous detection is achieved by modulating each laser at different frequencies, demodulating the signal by a pair of lock-in amplifiers for each gas. Laser beams are combined and detected by one detector after passing through an identical optical path. The experimental results show little performance degradation associated with modulation frequency multiplexing, and no cross-talk between the two multiplexed detection channels is measured. 相似文献
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149.
Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Annealing Treatment 下载免费PDF全文
WANG Xiang-Hu YAO Bin WEI Zhi-Peng SHEN De-Zhen ZHANG Zhen-Zhong LU You-Ming ZHANG Ji-Ying FAN Xi-Wu 《中国物理快报》2008,25(8):2993-2996
The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N2 are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O2. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N2)O to the N atom number on O site (NO) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N2, the percentage content of (N2)O is larger than that of NO, i.e.the ratio >1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O2, the percentage content of (N2)O is fewer than that of NO, i.e., the ratio <1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80K) PL spectra of ZnO:N film annealed in N2 and that of ZnO:N film annealed in O2. An emission band located at 3.358eV is observed in the spectra of the ZnO:N film after annealed in N2, this emission band is due to donor-bound exciton (D0X). After annealed in O2, the PL of the donor-bound exciton disappeared, an emission band located at 3.348eV is observed, this emission band is assigned to acceptor-bound exciton (A0X). 相似文献
150.
由静态探头线圈外有机材料产生的13C NMR背景信号强度大,化学位移范围广(δC 20~250),此背景信号在交叉极化实验中还可被增强,并随着样品信号的累积而累积,严重影响谱图分析.将相位步进脉冲引入交叉极化实验(称为PIPCP)中可以有效去除经交叉极化增强的13C NMR背景信号,但样品信号不受影响.这是由于经过相位步进脉冲后,线圈外相位严重畸变,而且线圈外锁定场强度急剧降低,来自探头材料的13C NMR背景信号无法有效地进行交叉极化.而对于被测样品甘氨酸来说,由于I核和S核之间强烈的偶极耦合作用,所加相位步进脉冲对锁定场强度的影响只有1.4%. 相似文献